Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors PDTA123JS,126

Part No.:
PDTA123JS,126
Manufacturer:
NXP Semiconductors
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
AetrixPDTA123JS,126.pdf
Description:
TRANS PREBIAS PNP 50V TO92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,568

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PDTA123JS from NXP Semiconductors is a PNP resistor-equipped transistor with integrated bias resistors R1 = 2.2 kΩ and R2 = 47 kΩ, designed for general-purpose switching in low-voltage DC circuits. It features VCEO = −50 V, IO = −100 mA, and VCEsat ≤ −100 mV at IC = −5 mA / IB = −0.25 mA, enabling compact level-shifting and logic interface applications in space-constrained through-hole designs.

For engineers reviewing the PDTA123JS datasheet, PDTA123JS pinout, PDTA123JS application, or PDTA123JS equivalent, key selection criteria include its TO-92 (SOT54) through-hole package, built-in resistor ratio (R2/R1 ≈ 21), input-off voltage (Vi(off) = −0.6 V typical), and thermal resistance (Rth j-a = 250 K/W), all critical for reliable discrete logic buffering and load driving without external bias networks.

Technical Context

This device integrates two precision on-chip resistors to form a fixed-base-bias network, eliminating external components while maintaining predictable turn-on/off thresholds. Its PNP topology supports active-low switching, emitter-follower buffering, and open-collector-compatible output stages.

The SOT54 (TO-92) package provides mechanical robustness and thermal performance suitable for ambient temperatures from −65 °C to +150 °C, with Ptot = 500 mW at Tamb ≤ 25 °C - enabling use in industrial control modules and legacy board replacements where leaded packages are required.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−50 V: Maximum collector-emitter blocking voltage before breakdown; defines safe operating range in high-side switch configurations.
IO (DC)−100 mA: Continuous output current capability; supports driving LEDs, relays, or small solenoids directly.
R1 / R22.2 kΩ / 47 kΩ: Fixed internal bias network; sets base current and ensures stable saturation without external resistors.
VCEsat≤ −100 mV at IC = −5 mA: Low saturation voltage minimizes power loss and heat generation during conduction.
hFE≥ 100 at VCE = −5 V, IC = −10 mA: Sufficient DC current gain for reliable digital switching with margin.
Vi(on) / Vi(off)−1.1 V to −0.75 V / −0.6 V to −0.5 V: Defined input threshold window enables clean TTL/CMOS-level compatibility.

Pinout & Package

SOT54 (TO-92) is a 3-lead through-hole plastic package with standard lead spacing (e = 2.54 mm), body dimensions 4.8 × 4.2 × 14.5 mm, and axial lead orientation optimized for manual assembly and wave soldering.

Pin/TerminalCircuit RoleDesign Meaning
1BaseInput node connected internally to R1 and R2; accepts logic-level signals without external pull-up/down.
2CollectorHigh-side switching node; connects to load supply rail in common-emitter configurations.
3EmitterReference terminal tied to system ground or low-side return path; forms output current sink.

Key Features

FeatureDesign Value
Built-in bias resistors R1/R2Eliminates two external SMT or through-hole resistors, reducing BOM count and PCB area in logic interface circuits.
Fixed resistor ratio (R2/R1 ≈ 21)Ensures consistent base current division across production lots, improving batch-to-batch switching consistency.
Vi(off) ≤ −0.5 VGuarantees full cutoff under standard CMOS low-state voltages, preventing unintended conduction in noise-prone environments.
Ptot = 500 mW (Tamb ≤ 25 °C)Supports sustained 100 mA switching without heatsinking in ventilated enclosures or moderate ambient conditions.

Applications

Logic Level TranslationLED Driver Interface

Use Scenario: Converting 3.3 V microcontroller GPIO outputs to drive 5 V or 12 V peripheral logic inputs.

IC Role / Device Role / Timing Role: PNP-based active-low level shifter with fixed bias network ensuring fast edge response and minimal propagation delay.

Use Value: Eliminates need for dual-supply translators or discrete resistor networks while maintaining <100 ns turn-off time.

Use Scenario: Driving multiple indicator LEDs from a single MCU I/O pin with current limiting and polarity inversion.

IC Role / Device Role / Timing Role: Constant-current sink switch configured in common-emitter mode with emitter grounded.

Use Value: Delivers stable 10–20 mA per LED without external current-setting resistors, reducing component count by 2× per channel.

Relay Coil DriverInverter Circuit Stage

Use Scenario: Controlling 5–24 V DC relay coils in industrial PLC I/O modules using 3.3 V or 5 V logic signals.

IC Role / Device Role / Timing Role: High-side switch with flyback diode integration support via collector-emitter clamping capability.

Use Value: Handles −100 mA peak coil current and withstands −50 V inductive kickback without external protection components.

Use Scenario: Implementing non-inverting digital inverters in analog-digital hybrid signal conditioning boards.

IC Role / Device Role / Timing Role: Emitter-follower buffer stage providing voltage gain ≈ 1 and high input impedance for sensor signal routing.

Use Value: Maintains signal integrity with hFE ≥ 100 and low VCEsat, minimizing offset and distortion in DC-coupled paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
PDTC123JSNPN complement with identical R1/R2 values and SOT54 package; requires inverted logic drive and reversed supply polarity.Used where active-high switching or sourcing behavior is required instead of sinking.Select PDTC123JS when interfacing with positive logic systems needing source-type outputs.
NSV123JSON Semiconductor's functionally equivalent PNP RET in SOT54; R1 = 2.2 kΩ, R2 = 47 kΩ, VCEO = −50 V, but hFE min = 80 vs. 100 for PDTA123JS.Suitable for cost-sensitive consumer electronics where marginal gain reduction is acceptable.Choose NSV123JS only if design tolerates lower DC gain and has validated layout compatibility.

Compared with PDTC123JS and NSV123JS, PDTA123JS offers higher guaranteed hFE (≥100), making it preferable for margin-critical industrial interfaces, while its TO-92 footprint ensures drop-in replacement in legacy through-hole assemblies without rework.

Availability

PDTA123JS is available at Aetrix Electronics and suitable for industrial control modules, legacy equipment repair, and embedded logic interface circuits requiring stable component supply and long-term obsolescence management.

Supply support for PDTA123JS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PDTA123J series belongs to NXP's resistor-equipped transistor (RET) product line, engineered to simplify discrete logic interface design by integrating precision bias networks into standard bipolar packages.

FAQ

What is the maximum continuous collector current rating for PDTA123JS?

The PDTA123JS has a maximum DC output current (IO) rating of −100 mA, verified under standard mounting conditions with ambient temperature ≤25 °C. This rating applies to steady-state conduction in common-emitter configurations and must be derated linearly above 25 °C ambient per the thermal resistance specification (Rth j-a = 250 K/W). Exceeding this limit risks thermal runaway or permanent degradation of the PDTA123JS junction.

Does PDTA123JS require external bias resistors for basic switching operation?

No, the PDTA123JS does not require external bias resistors because it integrates R1 = 2.2 kΩ and R2 = 47 kΩ internally between base, emitter, and collector terminals. This built-in network establishes a fixed base current path that enables direct connection to logic-level inputs (e.g., 3.3 V or 5 V microcontroller pins), eliminating two discrete components and simplifying PCB layout for the PDTA123JS in digital interface roles.

What is the pin configuration of PDTA123JS in its SOT54 (TO-92) package?

The PDTA123JS uses a standardized SOT54 (TO-92) pinout: Pin 1 is Base, Pin 2 is Collector, and Pin 3 is Emitter - confirmed in the "Simplified outline, symbol and pinning" section of the official NXP datasheet. This arrangement supports common-emitter switching topologies where the emitter is grounded and the collector drives the load, and is mechanically compatible with legacy TO-92 sockets and wave-soldering fixtures used for the PDTA123JS.

Can PDTA123JS be used as a direct replacement for standard PNP transistors like BC557?

No, PDTA123JS cannot serve as a direct replacement for standard PNP transistors such as BC557 because it includes internal bias resistors that alter its input impedance and drive requirements. While both are PNP devices in TO-92 packages, the PDTA123JS expects logic-level voltage drive at the base pin and lacks the flexibility of externally adjustable biasing. Substituting the PDTA123JS for BC557 would require circuit redesign to accommodate its fixed R1/R2 network.

What is the typical input-off voltage (Vi(off)) for PDTA123JS and why does it matter?

The typical input-off voltage (Vi(off)) for PDTA123JS is −0.6 V, with a maximum of −0.5 V, defined as the base-emitter voltage below which collector current drops to ≤100 μA. This parameter ensures reliable cutoff when driven by standard CMOS or TTL logic low states, preventing leakage-induced false triggering in noise-sensitive applications - a critical design assurance for stable operation of the PDTA123JS in industrial control and instrumentation circuits.

PDTA123JS,126 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
2.2 kOhms
Resistor - Emitter Base (R2):
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
-
Power - Max:
500 mW
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

PDTA123JS,126 FAQ

1.How can I place an order for PDTA123JS,126 through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTA123JS,126 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTA123JS,126 reliable?

The price and inventory of PDTA123JS,126 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA123JS,126 is usually 5 days.

3.What payment methods are accepted for PDTA123JS,126?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA123JS,126 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTA123JS,126?

PDTA123JS,126 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTA123JS,126 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTA123JS,126?

For technical support, including PDTA123JS,126 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA123JS,126 requirements.

6.How does Aetrix verify that PDTA123JS,126 is sourced from the original manufacturer or authorized distributors?

All PDTA123JS,126 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA123JS,126 meets industry standards.

7.What is the process for return or replacement of PDTA123JS,126?

All PDTA123JS,126 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA123JS,126, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTA123JS,126 part is unused and in its original packaging.

Return procedure for PDTA123JS,126:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PDTA123JS,126 Tags

  • PDTA123JS,126
  • PDTA123JS,126 PDF
  • PDTA123JS,126 Datasheet
  • PDTA123JS,126 Specifications
  • PDTA123JS,126 Images
  • NXP Semiconductors
  • NXP Semiconductors PDTA123JS,126
  • Buy PDTA123JS,126
  • PDTA123JS,126 Price
  • PDTA123JS,126 Distributor
  • PDTA123JS,126 Supplier
  • PDTA123JS,126 Wholesale
Related Products
MUN5211T1G
MUN5211T1G

onsemi

DTC043ZEBTL
DTC043ZEBTL

Rohm Semiconductor

DTC114EKAT146
DTC114EKAT146

Rohm Semiconductor

DDTD113ZC-7-F
DDTD113ZC-7-F

Diodes Incorporated

DRDNB16W-7
DRDNB16W-7

Diodes Incorporated

PDTC114ET,215
PDTC114ET,215

Nexperia USA Inc.

PDTC143ZT,215
PDTC143ZT,215

Nexperia USA Inc.

PDTC143ET,215
PDTC143ET,215

Nexperia USA Inc.

PDTC143XT,215
PDTC143XT,215

Nexperia USA Inc.

MMUN2211LT1G
MMUN2211LT1G

onsemi

PDTC144ET,215
PDTC144ET,215

Nexperia USA Inc.

PDTC124ET,215
PDTC124ET,215

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER