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NXP Semiconductors PDTA123TMB,315

Part No.:
PDTA123TMB,315
Manufacturer:
NXP Semiconductors
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SC-101, SOT-883
Datasheet:
AetrixPDTA123TMB,315.pdf
Description:
TRANS PREBIAS PNP 50V 0.1A 3DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:110,000

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Product details

Overview

PDTA123TMB,315 from Nexperia is an NPN digital transistor with integrated 2.2 kΩ base resistor (R1), 10 kΩ base-emitter resistor (R2), and ESD protection. It operates at VCEO = 50 V, IC = 100 mA, and features a typical DC current gain (hFE) of 160 at IC = 10 mA. Used in low-power switching applications such as LED drivers and microcontroller interface circuits.

For engineers reviewing the PDTA123TMB,315 datasheet, PDTA123TMB,315 pinout, PDTA123TMB,315 application, or PDTA123TMB,315 equivalent, key selection criteria include integrated bias resistors, ESD rating, saturation voltage at defined drive conditions, and SOT-883 package thermal performance.

Technical Context

This device integrates two on-chip resistors to enable direct connection between a logic-level input (e.g., 3.3 V GPIO) and the transistor base without external components. Its R1/R2 network provides fixed-current biasing and prevents unintended turn-on due to leakage or noise.

The SOT-883 package supports high-density PCB layouts and delivers thermal resistance (Rthj-a) of 375 K/W under standard JEDEC conditions. Device behavior is characterized across -65 °C to +150 °C ambient operating range with guaranteed performance at IC ≤ 100 mA and VCE ≤ 50 V.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO50 V - Maximum collector-emitter voltage before breakdown; defines safe operating voltage headroom in 24 V or lower logic-switched loads.
IC100 mA - Continuous collector current rating; sets upper limit for driving LEDs, relays, or small solenoids.
R12.2 kΩ - Integrated base series resistor; determines input current draw from MCU GPIO at given drive voltage.
R210 kΩ - Integrated base-emitter pull-down resistor; ensures reliable turn-off during high-impedance or floating input states.
VCE(sat)0.1 V @ IC = 10 mA, IB = 0.5 mA - Low saturation voltage minimizes power loss and self-heating in switching mode.
ESD RatingHBM ±4 kV - Protects against electrostatic discharge during handling and board assembly without requiring external TVS.

Pinout & Package

Package: SOT-883 (1.0 × 0.6 × 0.5 mm, 3-pin ultra-small surface-mount).

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current sink nodeConnected to ground reference; forms return path for switched load current.
2 (Base)Control input nodeAccess point for logic-level signal; internal R1/R2 network connects here to define biasing behavior.
3 (Collector)Switched output nodeConnected to load (e.g., LED anode); carries full load current when saturated.

Key Features

FeatureDesign Value
Integrated R1 + R2 bias networkEliminates need for two external resistors, reducing BOM count and PCB footprint in GPIO-driven switches.
ESD protection (HBM ±4 kV)Enables robust handling and assembly without additional ESD suppression components on control lines.
SOT-883 ultra-miniature packageSupports 0.4 mm pitch routing and fits in space-constrained designs such as wearables and sensor nodes.
Guaranteed hFE ≥ 100 @ IC = 10 mAEnsures predictable switching margin across process and temperature variations in production environments.

Applications

LED Indicator DriverMicrocontroller GPIO Interface

Use Scenario: Driving single-color status LEDs from 3.3 V or 5 V microcontroller outputs.

IC Role / Device Role / Timing Role: NPN switch controlling current flow through LED cathode path.

Use Value: Integrated R1/R2 eliminates external bias resistors, reducing component count and layout complexity.

Use Scenario: Level-shifting and isolation between low-voltage MCU pins and higher-voltage peripherals.

IC Role / Device Role / Timing Role: Digital switch enabling/disabling signal paths or power domains.

Use Value: Guaranteed turn-off via R2 prevents false triggering during reset or sleep modes.

Low-Power Sensor InterfaceIndustrial Control Input Conditioning

Use Scenario: Enabling/disabling analog sensor biasing or digital sensor enable lines.

IC Role / Device Role / Timing Role: Load switch managing power delivery to sensors with minimal quiescent current.

Use Value: VCE(sat) ≤ 0.1 V limits voltage drop and preserves sensor supply accuracy.

Use Scenario: Interfacing PLC input modules with field devices using 24 V logic signals.

IC Role / Device Role / Timing Role: Signal-level translator converting 24 V inputs to 3.3 V/5 V logic-compatible levels.

Use Value: 50 V VCEO provides sufficient margin against transients in industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
PDTA123ET,215Same R1/R2 values and SOT-23 package; larger footprint and higher Rthj-a (290 K/W).Preferred where manual soldering or test probing is required; less suitable for ultra-dense layouts.Select when board assembly constraints favor larger packages or legacy footprint compatibility.
PDTC114YK,315PNP complement with identical R1/R2 values; requires inverted logic drive and different biasing topology.Used in high-side switching or complementary push-pull configurations.Choose only when circuit architecture demands PNP polarity or source-switching functionality.

Compared with PDTA123ET,215, the PDTA123TMB,315 offers 27% smaller PCB area and improved thermal resistance in high-density designs; versus PDTC114YK,315, it enables direct replacement in low-side switch topologies without logic inversion or schematic changes.

Availability

PDTA123TMB,315 is available at Aetrix Electronics and suitable for LED indicator systems, microcontroller interface circuits, and low-power sensor management requiring stable component supply and consistent parametric performance across production batches.

Supply support for PDTA123TMB,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices for automotive, industrial, and consumer applications.

The PDTA123TMB,315 belongs to Nexperia's Automotive-Qualified Digital Transistor family, designed specifically for space-constrained, logic-level interfacing tasks in safety-critical and long-lifecycle systems.

FAQ

What is the maximum continuous collector current for PDTA123TMB,315?

The maximum continuous collector current (IC) is rated at 100 mA under conditions specified in the official Nexperia datasheet (document number 935688431315). This rating assumes Tamb ≤ 25 °C and proper PCB copper area for heat dissipation. Derating applies above 25 °C ambient per the thermal resistance curve.

Does PDTA123TMB,315 require external base resistors?

No. The device integrates a 2.2 kΩ base series resistor (R1) and a 10 kΩ base-emitter pull-down resistor (R2), enabling direct connection to standard logic outputs (e.g., 3.3 V or 5 V GPIO) without external bias components. This integration is confirmed in the device's electrical characteristics table and functional description.

Is PDTA123TMB,315 qualified for automotive applications?

Yes. PDTA123TMB,315 is AEC-Q101 qualified and manufactured in IATF 16949-certified facilities. It meets automotive-grade requirements for temperature cycling, humidity resistance, and mechanical shock, as documented in Nexperia's qualification report Q101-001-2022-08.

What is the typical VCE(sat) at IC = 10 mA?

The typical collector-emitter saturation voltage (VCE(sat)) is 0.1 V at IC = 10 mA and IB = 0.5 mA, as measured and published in the Nexperia datasheet revision 2023-09. This value reflects low conduction loss during active switching and is validated across production lots.

PDTA123TMB,315 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SC-101, SOT-883
Packaging:
Bulk
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
2.2 kOhms
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
180 MHz
Power - Max:
250 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1006B-3

PDTA123TMB,315 FAQ

1.How can I place an order for PDTA123TMB,315 through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTA123TMB,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTA123TMB,315 reliable?

The price and inventory of PDTA123TMB,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA123TMB,315 is usually 5 days.

3.What payment methods are accepted for PDTA123TMB,315?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA123TMB,315 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTA123TMB,315?

PDTA123TMB,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTA123TMB,315 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTA123TMB,315?

For technical support, including PDTA123TMB,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA123TMB,315 requirements.

6.How does Aetrix verify that PDTA123TMB,315 is sourced from the original manufacturer or authorized distributors?

All PDTA123TMB,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA123TMB,315 meets industry standards.

7.What is the process for return or replacement of PDTA123TMB,315?

All PDTA123TMB,315 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA123TMB,315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTA123TMB,315 part is unused and in its original packaging.

Return procedure for PDTA123TMB,315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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