Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PDTA123YU,115

Part No.:
PDTA123YU,115
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SC-70, SOT-323
Datasheet:
AetrixPDTA123YU,115.pdf
Description:
TRANS PREBIAS PNP 50V SOT323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,600

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PDTA123YU from Nexperia is a PNP resistor-equipped transistor (RET) designed for general-purpose switching in low-power digital interface circuits, featuring integrated bias resistors R1 = 2.2 kΩ and R2/R1 = 4.5, −50 V VCEO, −100 mA IO, and SOT323 (SC-70) package for space-constrained PCB layouts.

For engineers reviewing the PDTA123YU datasheet, PDTA123YU pinout, PDTA123YU application, or PDTA123YU equivalent, this device serves as a drop-in replacement for discrete base-resistor transistor configurations in level-shifting, LED driving, and microcontroller I/O buffering where simplified BOM and reduced layout complexity are critical.

Technical Context

This PNP RET integrates two precision thin-film resistors (R1 = 2.2 kΩ, R2 = 10 kΩ) directly into the silicon die to form a fixed-current gain control network, eliminating external base bias components. Its internal topology ensures predictable turn-on/off behavior with VI(on) = −1.15 V and VI(off) = −0.75 V at defined load conditions.

The device operates with open-base VCEO = −50 V and supports DC output current up to −100 mA while maintaining VCEsat ≤ −150 mV at IC = −10 mA / IB = −0.5 mA, enabling efficient low-voltage switching in 3.3 V and 5 V logic domains.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V - Maximum allowable collector-emitter voltage with base open; defines safe operating range in high-side switch applications.
IO −100 mA - Continuous DC output current capability; sufficient for driving LEDs, small relays, or logic inputs without external amplification.
R1 2.2 kΩ ±30% - Integrated input bias resistor; sets base current magnitude and enables direct connection to CMOS/TTL outputs.
R2/R1 ratio 4.5 (3.6–5.5) - Fixed feedback resistor ratio; stabilizes operating point against temperature and process variation.
VCEsat ≤ −150 mV at IC = −10 mA - Low saturation voltage minimizes power loss and heat generation in on-state switching.
hFE 35 min at VCE = −5 V, IC = −5 mA - Guaranteed DC current gain ensures reliable switching margin under worst-case conditions.
Ptot 200 mW at Tamb ≤ 25 °C - Thermal limit for SOT323 package; requires minimal copper area for thermal management in standard FR4 layouts.

Pinout & Package

SOT323 (SC-70) is a 3-lead surface-mount plastic package measuring 2.2 mm × 1.35 mm × 0.95 mm, optimized for high-density routing and reflow-compatible assembly. Its compact footprint supports automated pick-and-place with standard 4 mm tape-and-reel packaging (−115 variant).

Pin/Terminal Circuit Role Design Meaning
1 Input (base) Connected internally to R1; accepts logic-level drive signals directly from MCU GPIO or buffer outputs.
2 GND (emitter) Common reference node; tied to system ground in high-side switch configuration or pulled up in inverter mode.
3 Output (collector) Switched output node; sinks current to ground when active, suitable for driving cathode-connected loads.

Key Features

Feature Design Value
Built-in bias resistors Eliminates need for two external SMT resistors, reducing BOM count by 2 parts and saving ≥1.5 mm² PCB area per instance.
Reduced pick-and-place cost Single-component placement replaces three-part assembly (transistor + two resistors), lowering placement time and defect risk in high-volume production.
Stable switching threshold VI(on) = −1.15 V and VI(off) = −0.75 V ensure clean logic-level recognition across temperature (−40 °C to +100 °C).
Low thermal resistance Rth(j-a) = 625 K/W enables operation up to 100 °C ambient without derating when mounted on standard 1-oz FR4 with minimal copper pour.

Applications

LED Driver Circuit Microcontroller I/O Buffer

Use Scenario: Driving single-color indicator LEDs from 3.3 V GPIO pins with current limiting via external series resistor.

IC Role / Device Role: Low-side current sink switch controlling LED anode-to-VCC path.

Use Value: Integrated R1/R2 eliminates need for separate base resistor network, ensuring consistent brightness and eliminating layout sensitivity to trace inductance.

Use Scenario: Level-shifting and current boosting between 1.8 V sensor output and 5 V legacy peripheral input.

IC Role / Device Role: Inverting buffer with fixed gain and rail-to-rail swing capability.

Use Value: VI(on)/VI(off) thresholds match standard logic families, enabling reliable signal translation without additional voltage dividers or Schmitt triggers.

Logic Inverter Stage Power Rail Enable Switch

Use Scenario: Generating complementary enable signals for dual-supply subsystems using a single control line.

IC Role / Device Role: Active-low inverter with emitter-follower output configuration.

Use Value: Predictable VCEsat ≤ −150 mV ensures <100 mV voltage drop across enabled path, minimizing supply rail deviation during transient load steps.

Use Scenario: Controlling 5 V auxiliary rail activation in battery-powered IoT nodes based on MCU wake-up signal.

IC Role / Device Role: High-side switch driver (with external P-channel MOSFET) or direct low-side enable for LDO input.

Use Value: −100 mA IO rating supports typical enable currents for PMICs and regulators, while SOT323 footprint allows placement adjacent to power ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PDTC123YU NPN complement with identical R1/R2 values, VCEO = +50 V, IO = +100 mA; pinout matches but polarity inverted. Used in low-side switching where load connects to VCC; not interchangeable without circuit redesign. Select PDTC123YU only when NPN topology aligns with existing schematic and layout constraints.
EMH11T2R PNP RET with R1 = 10 kΩ, R2 = 10 kΩ, VCEO = −50 V, SOT-323 package; higher input impedance but lower drive strength (IO = −30 mA). Suitable for high-impedance logic interfaces but insufficient for >−50 mA loads like multi-LED strings or relay coils. Choose EMH11T2R only for ultra-low-power signal conditioning where base current minimization outweighs output current needs.

Compared with PDTC123YU, PDTA123YU provides complementary PNP functionality with identical footprint and biasing-enabling dual-polarity design reuse. Against EMH11T2R, it delivers triple the output current at lower input voltage thresholds, making it preferable for robust digital switching in industrial control I/O modules.

Availability

PDTA123YU is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O buffering, logic inverter stages, and power rail enable switches requiring stable component supply across automotive infotainment, industrial HMI, and consumer appliance designs.

Supply support for PDTA123YU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business, with core expertise in high-volume, high-reliability silicon for automotive, industrial, and computing markets.

PDTA123YU belongs to Nexperia's resistor-equipped transistor (RET) product line, engineered specifically to reduce bill-of-materials complexity and improve manufacturing yield in cost-sensitive digital interface applications.

FAQ

What is the maximum continuous collector current for PDTA123YU?

The maximum continuous DC output current (IO) is −100 mA, specified under ambient temperature ≤25 °C with no forced airflow. Derating applies above 25 °C per the thermal resistance Rth(j-a) = 625 K/W; at 70 °C ambient, usable current reduces to approximately −65 mA to maintain junction temperature below 150 °C.

Can PDTA123YU replace a discrete PNP transistor plus two external resistors?

Yes-PDTA123YU integrates R1 = 2.2 kΩ and R2 = 10 kΩ directly onto the die, replicating the function of a BC807-16 with 2.2 kΩ base resistor and 10 kΩ base-emitter pull-down. Pin compatibility with SOT323-packaged discretes allows direct footprint reuse, though layout must respect its fixed internal topology (pin 1 = base input, pin 2 = emitter, pin 3 = collector).

What is the recommended soldering method for PDTA123YU?

Reflow soldering is the only recommended method, per Nexperia's datasheet. The SOT323 package is rated for JEDEC J-STD-020D-compliant reflow profiles with peak temperatures up to 260 °C. Wave soldering and hand soldering are not advised due to thermal stress risks and potential damage to internal resistors or bond wires.

Does PDTA123YU support operation at −40 °C?

Yes-PDTA123YU is fully characterized from −40 °C to +150 °C junction temperature. Electrical parameters including hFE, VCEsat, and VI(on)/VI(off) are guaranteed across this range, with typical performance curves provided in Figures 1–4 of the datasheet. No derating is required for cold-start operation in outdoor or automotive environments.

PDTA123YU,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
2.2 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
-
Power - Max:
200 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323

PDTA123YU,115 FAQ

1.How can I place an order for PDTA123YU,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTA123YU,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTA123YU,115 reliable?

The price and inventory of PDTA123YU,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA123YU,115 is usually 5 days.

3.What payment methods are accepted for PDTA123YU,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA123YU,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTA123YU,115?

PDTA123YU,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTA123YU,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTA123YU,115?

For technical support, including PDTA123YU,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA123YU,115 requirements.

6.How does Aetrix verify that PDTA123YU,115 is sourced from the original manufacturer or authorized distributors?

All PDTA123YU,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA123YU,115 meets industry standards.

7.What is the process for return or replacement of PDTA123YU,115?

All PDTA123YU,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA123YU,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTA123YU,115 part is unused and in its original packaging.

Return procedure for PDTA123YU,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PDTA123YU,115 Tags

  • PDTA123YU,115
  • PDTA123YU,115 PDF
  • PDTA123YU,115 Datasheet
  • PDTA123YU,115 Specifications
  • PDTA123YU,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PDTA123YU,115
  • Buy PDTA123YU,115
  • PDTA123YU,115 Price
  • PDTA123YU,115 Distributor
  • PDTA123YU,115 Supplier
  • PDTA123YU,115 Wholesale
Related Products
MUN5211T1G
MUN5211T1G

onsemi

DTC043ZEBTL
DTC043ZEBTL

Rohm Semiconductor

DTC114EKAT146
DTC114EKAT146

Rohm Semiconductor

DDTD113ZC-7-F
DDTD113ZC-7-F

Diodes Incorporated

DRDNB16W-7
DRDNB16W-7

Diodes Incorporated

PDTC114ET,215
PDTC114ET,215

Nexperia USA Inc.

PDTC143ZT,215
PDTC143ZT,215

Nexperia USA Inc.

PDTC143ET,215
PDTC143ET,215

Nexperia USA Inc.

PDTC143XT,215
PDTC143XT,215

Nexperia USA Inc.

MMUN2211LT1G
MMUN2211LT1G

onsemi

PDTC144ET,215
PDTC144ET,215

Nexperia USA Inc.

PDTC124ET,215
PDTC124ET,215

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER