NXP Semiconductors PDTA124EK,115
- Part No.:
- PDTA124EK,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PDTA124EK,115.pdf
- Description:
- TRANS PREBIAS PNP 50V 0.1A SMT3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
PDTA124EK from NXP Semiconductors is a PNP resistor-equipped transistor with integrated bias resistors R1 = 22 kΩ and R2 = 22 kΩ, rated for −50 V VCEO and −100 mA IO, used in general-purpose switching and interface circuits on compact SOT346 (SC-59) PCBs.
For engineers reviewing the PDTA124EK datasheet, PDTA124EK pinout, PDTA124EK application, or PDTA124EK equivalent, this discrete PNP RET simplifies BOM count and reduces layout complexity in low-voltage logic-level driver and inverter designs requiring stable DC gain and low saturation voltage.
Technical Context
This device integrates two precision 22 kΩ bias resistors to form a fixed-base-biased PNP transistor topology, eliminating external base resistors. It operates with VCE ≤ −50 V and supports DC output current up to −100 mA at ambient temperatures from −65 °C to +150 °C.
The PDTA124EK delivers hFE ≥ 60 at IC = −5 mA and VCE = −5 V, with VCEsat ≤ −150 mV at IC = −10 mA/IB = −0.5 mA. Its input-off voltage Vi(off) ranges from −1.1 V to −0.8 V, enabling reliable turn-off in TTL- and CMOS-compatible digital interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter reverse voltage before breakdown in open-base configuration. |
| IO (DC) | −100 mA: Continuous collector current capability without thermal derating at Tamb ≤ 25 °C. |
| R1 / R2 | 22 kΩ each: Precise internal base bias network enabling single-resistor-free switch operation. |
| hFE | ≥60 at IC = −5 mA: Minimum DC current gain ensures predictable switching margin in logic-driven loads. |
| VCEsat | ≤ −150 mV at IC = −10 mA: Low saturation voltage minimizes power loss and heat generation in active-switch mode. |
| Vi(on) | −2.5 V to −1.7 V: Input voltage range guaranteeing full conduction under standard negative logic drive conditions. |
| Ptot | 250 mW at Tamb ≤ 25 °C: Total power dissipation limit for SOT346 package, defining thermal design headroom. |
Pinout & Package
SOT346 (SC-59) plastic surface-mounted package: 3-lead, 1.3 mm × 1.0 mm × 0.95 mm body, lead pitch 1.9 mm, JEDEC TO-236 compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Internal connection to R1–R2 node; accepts logic-level input for direct digital control without external biasing. |
| 2 | Emitter | Common reference terminal for PNP current sourcing; tied to higher potential rail in typical switch configurations. |
| 3 | Collector | Output terminal delivering switched current to load; connected to load return path in high-side driver topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | Eliminates two external resistors, reducing component count and PCB area in space-constrained designs. |
| Low VCEsat | ≤ −150 mV enables efficient power delivery in battery-powered and thermally sensitive applications. |
| Guaranteed hFE ≥ 60 | Ensures consistent switching behavior across production lots without gain binning or calibration. |
| −100 mA IO rating | Supports driving LEDs, small relays, and logic gates directly without additional buffer stages. |
| JEDEC-compliant SOT346 | Enables use of standard reflow soldering processes and compatibility with automated pick-and-place equipment. |
Applications
| LED Driver Circuit | Logic-Level Inverter |
|---|---|
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V or 5 V microcontroller GPIO pins. IC Role / Device Role / Timing Role: High-side PNP switch sourcing current to LED anode while sinking through cathode to ground. Use Value: Built-in 22 kΩ bias resistors allow direct GPIO connection without external components, reducing BOM cost by 2 parts per channel. | Use Scenario: Converting TTL/CMOS logic HIGH (3.3 V) to LOW (0 V) output in signal conditioning paths. IC Role / Device Role / Timing Role: Active-low inverter stage providing rail-to-rail voltage inversion with <100 ns propagation delay. Use Value: VCEsat ≤ −150 mV ensures clean LOW-level output (<0.15 V) compatible with 1.8 V and 3.3 V logic families. |
| Microcontroller Interface | Small-Signal Amplifier |
Use Scenario: Level-shifting and current amplification between mixed-voltage domains (e.g., 5 V MCU to 12 V sensor interface). IC Role / Device Role / Timing Role: Voltage translator and current booster placed between controller output and external load enable line. Use Value: −50 V VCEO rating provides 7 V headroom above 12 V rail, ensuring robustness against transient overvoltage. | Use Scenario: Amplifying low-amplitude analog signals (e.g., sensor outputs) in portable instrumentation. IC Role / Device Role / Timing Role: Class-A common-emitter amplifier stage with fixed bias for DC-coupled small-signal gain. Use Value: hFE ≥ 60 at −5 mA enables predictable voltage gain (Av ≈ −hFE·RC/RE) without external bias resistor tuning. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC124EK | NPN complement with identical R1/R2 values, package, and ratings; polarity reversal required in circuit layout. | Used where sink-switching (NPN) is preferred over source-switching (PNP); not drop-in replaceable due to opposite polarity. | Select PDTC124EK only when redesigning for low-side switching topology or complementary push-pull stages. |
| EMZ7T2R | Same SOT346 package but R1 = 47 kΩ, R2 = 47 kΩ; lower base current, reduced gain sensitivity to temperature drift. | Better suited for high-impedance drive sources or thermally unstable environments where tighter bias stability is critical. | Choose EMZ7T2R when operating near maximum junction temperature or when drive voltage margin is limited to <2.5 V. |
Compared with PDTC124EK and EMZ7T2R, the PDTA124EK offers optimal balance of gain, saturation voltage, and bias resistor value for general-purpose 3.3 V/5 V logic interfacing-making it ideal for cost-sensitive, space-constrained switching where PNP sourcing is required.
Availability
PDTA124EK is available at Aetrix Electronics and suitable for LED driver circuits, logic-level inverters, microcontroller interface modules, and small-signal amplifiers requiring stable component supply and long-term industrial availability.
Supply support for PDTA124EK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PDTA124EK belongs to NXP's resistor-equipped transistor (RET) product line, designed specifically to reduce discrete BOM count and improve assembly yield in consumer, computing, and industrial control systems.
FAQ
What is the pin configuration of the PDTA124EK?
The PDTA124EK uses SOT346 package with pin 1 = Base, pin 2 = Emitter, pin 3 = Collector. This configuration matches JEDEC TO-236AB and enables direct replacement in layouts designed for standard PNP RETs with identical pinout.
Does the PDTA124EK require external bias resistors?
No, the PDTA124EK integrates R1 = 22 kΩ and R2 = 22 kΩ internally, eliminating the need for external base resistors. This allows direct connection to microcontroller GPIO pins or logic outputs without additional passive components.
What is the maximum operating temperature for the PDTA124EK?
The PDTA124EK has a maximum junction temperature (Tj) of 150 °C and an operating ambient temperature range of −65 °C to +150 °C. Thermal resistance Rth j-a is 500 K/W in free air, requiring appropriate copper pour or airflow for sustained −100 mA operation.
Can the PDTA124EK be used as a direct replacement for the PDTA124EE?
No-the PDTA124EE uses SOT416 (SC-75) package with different pin assignment (pin 1 = Base, pin 2 = Emitter, pin 3 = Collector), whereas PDTA124EK uses SOT346 with same pin function but larger footprint and thermal mass. PCB layout change is required.
What is the typical VCEsat value for the PDTA124EK at rated current?
The PDTA124EK achieves typical VCEsat of −150 mV at IC = −10 mA and IB = −0.5 mA. This low saturation voltage ensures minimal power loss and efficient operation in battery-powered and thermally constrained applications.
PDTA124EK,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 22 kOhms
- Resistor - Emitter Base (R2):
- 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMT3; MPAK
PDTA124EK,115 FAQ
1.How can I place an order for PDTA124EK,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTA124EK,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTA124EK,115 reliable?
The price and inventory of PDTA124EK,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA124EK,115 is usually 5 days.
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5.How can I obtain technical support or documentation for PDTA124EK,115?
For technical support, including PDTA124EK,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA124EK,115 requirements.
6.How does Aetrix verify that PDTA124EK,115 is sourced from the original manufacturer or authorized distributors?
All PDTA124EK,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA124EK,115 meets industry standards.
7.What is the process for return or replacement of PDTA124EK,115?
All PDTA124EK,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA124EK,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTA124EK,115 part is unused and in its original packaging.
Return procedure for PDTA124EK,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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