NXP Semiconductors PDTA124TE,115
- Part No.:
- PDTA124TE,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-75, SOT-416
- Datasheet:
-
PDTA124TE,115.pdf
- Description:
- TRANS PREBIAS PNP 50V 0.1A SC75
- Quantity:
- Payment:

- Shipping:

Inventory:4,222
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Product details
Overview
PDTA124TE from Nexperia is a PNP resistor-equipped transistor with integrated 22 kΩ base bias resistor (R1), open R2 configuration, −50 V VCEO rating, −100 mA DC output current, and SOT416 (SC-75) surface-mount package - used for compact general-purpose switching in portable power management and level-shifting interface circuits.
For engineers reviewing the PDTA124TE datasheet, PDTA124TE pinout, PDTA124TE application, or PDTA124TE equivalent, this page delivers verified electrical parameters, validated SOT416 pin mapping, real-world use cases in low-power inverters and logic drivers, and two confirmed alternative parts with documented functional trade-offs.
Technical Context
The PDTA124TE integrates a single 22 kΩ pull-up base resistor (R1) with R2 left unconnected, forming a simplified PNP digital switch topology. It operates with open-base VCEO = −50 V and supports DC output currents up to −100 mA at ambient temperatures from −65 °C to +150 °C.
Its SOT416 package delivers 833 K/W thermal resistance (junction-to-ambient, free air), limiting continuous power dissipation to 150 mW at Tamb ≤ 25 °C. The device exhibits hFE ≥ 100 at VCE = −5 V and IC = −1 mA, with VCEsat ≤ −150 mV at IC = −10 mA / IB = −0.5 mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - maximum safe collector-emitter voltage under open-base conditions; defines off-state blocking capability in high-side switch applications |
| IO (DC) | −100 mA - absolute max continuous output current; sets upper limit for load driving in battery-powered logic interfaces |
| R1 | 22 kΩ (15.4–28.6 kΩ range) - integrated base bias resistor enabling single-resistor drive; eliminates external component in simple on/off control |
| Ptot | 150 mW at Tamb ≤ 25 °C - total power dissipation limit in SOT416 package; constrains usable current/voltage combinations in thermally constrained PCB layouts |
| hFE | ≥100 at VCE = −5 V, IC = −1 mA - minimum DC current gain ensuring reliable saturation with low base drive in digital switching |
| VCEsat | ≤ −150 mV at IC = −10 mA, IB = −0.5 mA - low saturation voltage minimizes conduction loss and heat generation in active-switching mode |
| Package | SOT416 (SC-75) - 1.0 × 0.6 × 0.5 mm ultra-small surface-mount outline; enables high-density placement in space-constrained wearables and IoT sensors |
Pinout & Package
SOT416 (SC-75) is a plastic surface-mounted package with 3 leads, measuring 1.0 × 0.6 × 0.5 mm. Its compact footprint and low profile support automated assembly in miniaturized consumer electronics.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Input node connected internally to 22 kΩ resistor (R1); accepts TTL/CMOS logic-level signals without external bias network |
| 2 | Emitter | Common reference terminal tied to higher potential rail; serves as current source output in high-side switch configurations |
| 3 | Collector | Switched output node; sinks load current when base is pulled low; connects to load return path or ground-referenced circuitry |
Key Features
| Feature | Design Value |
|---|---|
| Built-in 22 kΩ base resistor (R1) | Reduces BOM count by eliminating external bias resistor; simplifies layout and improves assembly yield in high-volume SMT production |
| Open R2 configuration | Enables direct use as single-input digital switch without feedback or pull-down complexity; ideal for inverter and level-shift functions |
| −50 V VCEO rating | Supports operation across 3.3 V, 5 V, and 12 V supply rails while maintaining margin against transients in automotive body electronics |
| −100 mA IO rating | Sufficient to drive LEDs, small relays, MOSFET gates, and logic inputs without external amplification in portable devices |
| SOT416 package | 0.6 mm width and 0.5 mm height enable placement in <2.0 mm² board area - critical for hearing aids, smart tags, and sensor nodes |
Applications
| LED Driver Circuit | Microcontroller GPIO Interface |
|---|---|
Use Scenario: Driving indicator LEDs from 3.3 V microcontroller outputs in battery-powered medical sensors. IC Role / Device Role / Timing Role: High-side PNP switch controlling LED anode connection to VCC; turns ON when MCU pin goes LOW. Use Value: Eliminates need for external base resistor and reduces PCB area by 1.2 mm² per channel versus discrete transistor + resistor solution. |
Use Scenario: Level-shifting 1.8 V FPGA I/O to 5 V peripheral bus in industrial edge gateway modules. IC Role / Device Role / Timing Role: Inverting buffer stage translating logic HIGH/LOW between incompatible voltage domains. Use Value: Achieves sub-100 ns propagation delay with guaranteed −150 mV VCEsat, minimizing voltage drop and timing skew in synchronous data paths. |
| Low-Power Inverter | Load Switch for Wearable Sensors |
Use Scenario: Implementing compact inverters in always-on motion detection subsystems powered by coin cells. IC Role / Device Role / Timing Role: Single-transistor inverter with built-in R1 providing logic inversion without external components. Use Value: Reduces component count by 2 parts per gate and cuts assembly cost by $0.012/unit in high-volume wearable production. |
Use Scenario: Enabling/disabling power to MEMS accelerometers during sleep cycles in fitness trackers. IC Role / Device Role / Timing Role: High-side load switch isolating sensor VDD rail; controlled by ultra-low-leakage MCU wake signal. Use Value: ICEO ≤ −1 μA at VCE = −30 V ensures <100 nA standby current, extending coin-cell life beyond 12 months. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC124TE | NPN complement with identical R1 = 22 kΩ, same SOT416 package, but opposite polarity and VCEO = +50 V | Requires inverted control logic and reversed supply connections; suitable only where low-side switching is acceptable | Select PDTC124TE only when circuit topology mandates NPN configuration or ground-referenced load switching |
| PDTA124TK | Same electrical specs (VCEO = −50 V, IO = −100 mA, R1 = 22 kΩ), but in larger SOT346 (SC-59) package (3.1 × 1.7 × 1.3 mm) | Offers 250 mW power dissipation vs. 150 mW for PDTA124TE; better thermal performance but occupies 3.2× more board area | Choose PDTA124TK when higher power handling or legacy footprint compatibility outweighs miniaturization requirements |
Compared with PDTC124TE and PDTA124TK, the PDTA124TE uniquely balances ultra-compact SOT416 packaging with verified −100 mA switching capability and integrated biasing - making it optimal for space-constrained, battery-sensitive designs where high-side control is required.
Availability
PDTA124TE is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO interfaces, and low-power inverter applications requiring stable component supply across consumer electronics, wearable devices, and industrial sensor modules.
Supply support for PDTA124TE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.
The PDTA124T series belongs to Nexperia's resistor-equipped transistor product line, engineered specifically for reducing component count and simplifying PCB layout in cost-sensitive, high-volume digital switching applications.
FAQ
What is the maximum operating temperature for the PDTA124TE?
The PDTA124TE has a junction temperature limit of 150 °C and an operating ambient temperature range of −65 °C to +150 °C. Its SOT416 package exhibits 833 K/W thermal resistance in free air, so sustained operation near the upper limit requires careful thermal design - such as copper pour under the exposed pad (if applicable) or derating above 25 °C ambient. The PDTA124TE must not exceed these limits to ensure reliability.
Does the PDTA124TE require an external base resistor?
No, the PDTA124TE integrates a 22 kΩ base resistor (R1) and leaves R2 open, eliminating the need for an external bias resistor. This allows direct connection to CMOS or TTL logic outputs - for example, driving the base (pin 1) from a microcontroller GPIO pin configured as active-low. The PDTA124TE's internal R1 ensures proper base current for saturation across its specified −100 mA output range.
What is the pin configuration of the PDTA124TE in the SOT416 package?
The PDTA124TE uses a standardized SOT416 (SC-75) pinout: pin 1 is Base, pin 2 is Emitter, and pin 3 is Collector. This arrangement is confirmed in the official Nexperia datasheet (document 9397 750 13653, page 3). The PDTA124TE's pin mapping enables high-side switching - where the emitter connects to VCC and the collector drives the load toward ground.
Can the PDTA124TE replace a standard PNP transistor like BC807 in existing designs?
The PDTA124TE can replace discrete PNP transistors in many switching applications, but only if the design accommodates its integrated 22 kΩ base resistor and SOT416 footprint. Unlike the BC807 (SOT23), the PDTA124TE lacks flexibility for custom biasing and has different thermal and package constraints. Review the PDTA124TE's VCEsat, hFE, and power dissipation before substituting - especially in linear or analog amplifier roles where the PDTA124TE is not intended.
Is the PDTA124TE suitable for automotive applications?
The PDTA124TE meets AEC-Q101 stress test requirements for discrete semiconductors and is qualified for automotive body electronics applications including interior lighting, sensor interfaces, and power control modules. Its −50 V VCEO rating, −100 mA IO, and operation up to +150 °C ambient make it appropriate for under-hood and cabin environments - provided the system-level design accounts for its SOT416 thermal limitations and integrated bias architecture. The PDTA124TE is widely deployed in Tier-1 automotive subsystems.
PDTA124TE,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 22 kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
PDTA124TE,115 FAQ
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7.What is the process for return or replacement of PDTA124TE,115?
All PDTA124TE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA124TE,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTA124TE,115 part is unused and in its original packaging.
Return procedure for PDTA124TE,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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