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Nexperia USA Inc. PDTA124XQCZ
- Part No.:
- PDTA124XQCZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
PDTA124XQCZ.pdf
- Description:
- TRANS PREBIAS PNP 50V 0.1A 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,000
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Product details
Overview
PDTA124XQC from Nexperia is a 50 V, 100 mA PNP resistor-equipped transistor (RET) in a DFN1412D-3 (SOT8009) leadless SMD package with side-wettable flanks. It integrates R1 = 22 kΩ and R2 = 47 kΩ bias resistors, delivers hFE = 80 at IC = −5 mA / VCE = −5 V, and achieves VCE(sat) ≤ −100 mV at IC = −10 mA / IB = −0.5 mA - used for digital switching and IC input control in space-constrained consumer and industrial PCBs.
For engineers reviewing the PDTA124XQC datasheet, PDTA124XQC pinout, PDTA124XQC application, or PDTA124XQC equivalent, this page provides verified pin functions, real-world switching performance metrics, confirmed thermal derating curves, and validated alternatives for PNP digital logic interface and load-switching designs.
Technical Context
This RET implements a monolithic PNP bipolar transistor with two integrated silicon-based thin-film resistors: R1 (22 kΩ) connects base to input, and R2 (47 kΩ) connects base to emitter. The internal structure eliminates external bias components while maintaining predictable turn-on/off thresholds across −40 °C to +150 °C ambient.
Its DFN1412D-3 package features side-wettable flanks for automated optical inspection (AOI) of solder joints and supports reflow profiles per J-STD-020. The device operates with VI(on) = −2.0 to −1.1 V at IC = −2 mA and VI(off) = −0.8 to −0.5 V at VCE = −5 V / IC = −100 µA - enabling robust noise margin in 3.3 V and 5 V digital systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - maximum safe collector-emitter voltage before breakdown; enables use in 24 V industrial control rails with margin. |
| IO | −100 mA - continuous DC output current capability; sufficient for driving LEDs, small relays, or logic inputs. |
| hFE | 80 (min) at VCE = −5 V, IC = −5 mA - stable current gain ensures reliable saturation with low base drive. |
| VCE(sat) | ≤ −100 mV at IC = −10 mA, IB = −0.5 mA - ultra-low saturation voltage minimizes power loss in switching mode. |
| R1 / R2 | 22 kΩ / 47 kΩ - fixed internal bias network simplifies PCB layout and eliminates two external resistors. |
| Tj(max) | 150 °C - maximum junction temperature supports operation in sealed enclosures or high-ambient environments. |
| Ptot | 450 mW (on 70 µm FR4) - thermal rating defines usable power envelope under standard board conditions. |
Pinout & Package
DFN1412D-3 (SOT8009) is a 3-terminal, leadless plastic package measuring 1.4 × 1.2 × 0.48 mm with side-wettable flanks for AOI-compatible reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Input (base) | Connects to driving signal; internal R1 pulls base toward input, enabling direct microcontroller GPIO interfacing. |
| 2 | GND (emitter) | Emitter terminal tied to system ground; serves as common return path and reference for R2 bias network. |
| 3 | Output (collector) | Switched high-side output node; sinks current when active, suitable for low-side load switching configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias resistors | Eliminates need for two external SMT resistors, reducing BOM count and placement cost by ~0.02 USD/unit at volume. |
| Side-wettable flanks | Enables 100% automated optical inspection of solder joints without X-ray, improving first-pass yield in high-volume assembly. |
| Ultra-low profile | 0.48 mm max height allows use in ultra-thin devices such as wearables and slim IoT sensors. |
| Thermal derating support | Rated for 450 mW on 70 µm copper FR4; derates linearly above 25 °C ambient per Fig. 1 - critical for thermal-aware layout. |
| Wide operating temperature | Functional from −55 °C to +150 °C ambient, supporting deployment in automotive under-hood or industrial motor-control environments. |
Applications
| LED Driver Circuit | Digital Input Interface |
|---|---|
Use Scenario: Driving indicator LEDs from 3.3 V MCU GPIO pins in battery-powered handheld instruments. IC Role / Device Role: High-side switch controlling LED anode connection to supply rail; emitter grounded, collector tied to LED cathode. Use Value: Integrated R1/R2 ensures clean turn-on/turn-off without external biasing, reducing footprint by 0.8 mm² and eliminating resistor placement error risk. |
Use Scenario: Level-shifting and noise-filtering signals from industrial sensors into FPGA I/O banks. IC Role / Device Role: Digital buffer isolating noisy 24 V field signals from sensitive 3.3 V logic inputs via open-collector configuration. Use Value: VI(off) ≤ −0.5 V guarantees solid cutoff against EMI-induced false triggering; VCE(sat) ≤ −100 mV ensures minimal voltage drop during active state. |
| Microcontroller Peripheral Control | Low-Power Load Switching |
Use Scenario: Enabling/disabling power to peripheral ICs (e.g., sensors, transceivers) in energy-harvesting nodes. IC Role / Device Role: PNP switch placed between VDD and peripheral VCC, controlled by inverted MCU output. Use Value: 100 mA rating supports typical sensor modules; 22 kΩ/47 kΩ resistor ratio delivers precise base current for guaranteed saturation at 1.8 V–3.3 V logic levels. |
Use Scenario: Managing power to auxiliary circuits (e.g., display backlight, USB port power) in smart home hubs. IC Role / Device Role: Low-loss series pass element in always-on power domains where quiescent current must remain below 1 µA. Use Value: ICEO ≤ −5 µA at 150 °C ensures negligible leakage in hot enclosures; compact DFN package saves >60% board area vs. SOT23 alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC124XQC | NPN complement with identical R1/R2 values (22 kΩ/47 kΩ), same package, but opposite polarity. | Requires inverted control logic and load placement on collector side; unsuitable for high-side switching. | Select when circuit topology mandates NPN configuration or when sourcing current from VCC is required. |
| BC857BW | Discrete PNP transistor (no built-in resistors); requires external R1/R2; SOT323 package (larger than DFN1412D-3). | Offers higher VCEO (65 V) and hFE (250), but increases component count and layout complexity. | Choose only if design requires adjustable biasing, higher voltage headroom, or legacy footprint compatibility. |
Compared with PDTC124XQC, PDTA124XQC enables true high-side switching without logic inversion; versus BC857BW, it reduces PCB area by 42% and eliminates two passive components - directly lowering assembly cost and test time in high-volume production.
Availability
PDTA124XQC is available at Aetrix Electronics and suitable for LED driver circuits, digital input interfaces, microcontroller peripheral control, and low-power load switching requiring stable component supply and consistent parametric performance across manufacturing lots.
Supply support for PDTA124XQC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
The PDTA124XQC belongs to Nexperia's resistor-equipped transistor (RET) product line, engineered specifically to replace discrete BJT + resistor combinations in digital switching applications - prioritizing miniaturization, manufacturability, and AOI-ready packaging.
FAQ
What is the maximum allowable input voltage (VI) for PDTA124XQC?
The absolute maximum input voltage is −40 V to +7 V, as specified in Table 6. Operation beyond these limits risks permanent damage to the internal transistor or resistors. For reliable 3.3 V or 5 V logic interfacing, VI remains within −2.0 V to −1.1 V (VI(on)) and −0.8 V to −0.5 V (VI(off)), ensuring noise immunity and predictable switching behavior.
Can PDTA124XQC be used in high-frequency switching applications?
No - PDTA124XQC is optimized for DC and low-frequency digital switching (≤100 kHz), not RF or fast PWM. Its transition frequency fT is not characterized for this part; the datasheet only specifies fT for the internal bare transistor in related variants (e.g., 180 MHz for PDTA143XQC), but no fT value is provided for PDTA124XQC itself.
How does the DFN1412D-3 package affect thermal performance?
The DFN1412D-3 package achieves Rth(j-a) = 278 K/W on 70 µm FR4 PCB (Table 7), meaning a 100 mW dissipation raises junction temperature by ~27.8 °C above ambient. Its side-wettable flanks improve solder joint reliability but do not enhance thermal conduction - thermal design must rely on copper area and thickness, not package geometry.
Is PDTA124XQC automotive-qualified?
No - the datasheet contains no AEC-Q101 qualification statement, and Section 15 explicitly states that non-automotive qualified products "are not suitable for automotive use." It is rated for industrial and consumer applications only, with operating temperature up to +150 °C but without automotive stress testing or failure-rate validation.
PDTA124XQCZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 22 kOhms
- Resistor - Emitter Base (R2):
- 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA
- Frequency - Transition:
- 180 MHz
- Power - Max:
- 360 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN1412D-3
PDTA124XQCZ FAQ
1.How can I place an order for PDTA124XQCZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTA124XQCZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTA124XQCZ reliable?
The price and inventory of PDTA124XQCZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA124XQCZ is usually 5 days.
3.What payment methods are accepted for PDTA124XQCZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA124XQCZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTA124XQCZ?
PDTA124XQCZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTA124XQCZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTA124XQCZ?
For technical support, including PDTA124XQCZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA124XQCZ requirements.
6.How does Aetrix verify that PDTA124XQCZ is sourced from the original manufacturer or authorized distributors?
All PDTA124XQCZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA124XQCZ meets industry standards.
7.What is the process for return or replacement of PDTA124XQCZ?
All PDTA124XQCZ units undergo pre-shipment inspection (PSI). If there is an issue with PDTA124XQCZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTA124XQCZ part is unused and in its original packaging.
Return procedure for PDTA124XQCZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTA124XQCZ Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
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DTC114EKAT146
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DRDNB16W-7
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PDTC114ET,215
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