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NXP Semiconductors PDTA144VM,315

Part No.:
PDTA144VM,315
Manufacturer:
NXP Semiconductors
Category:
Single, Pre-Biased Bipolar Transistors
Package:
-
Datasheet:
AetrixPDTA144VM,315.pdf
Description:
TRANS PREBIAS PNP 250MW SOT883
Quantity:
Payment:
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Shipping:
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Inventory:120,000

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Product details

Overview

PDTA144VM from Nexperia is a PNP resistor-equipped transistor (RET) with integrated bias resistors R1 = 47 kΩ and R2 = 10 kΩ, designed for compact logic-level switching in space-constrained PCBs. It delivers −100 mA DC output current, −50 V collector-emitter voltage rating, and operates reliably up to +150 °C junction temperature. Used in low-power interface circuits where simplified drive and reduced component count are critical.

For engineers reviewing the PDTA144VM datasheet, PDTA144VM pinout, PDTA144VM application, or PDTA144VM equivalent, this page provides verified package mapping (SOT883), confirmed pin functions, real-world switching use cases, and validated alternative parts with documented parameter differences - all derived from the official Nexperia product data sheet Rev. 04 (2009).

Technical Context

This device integrates two precision thin-film resistors (R1 = 47 kΩ ±28%, R2/R1 = 0.21 ±21%) directly into a monolithic PNP bipolar die, eliminating external base bias components. Its internal resistor network enables direct connection to CMOS/TTL logic outputs without pull-up or current-limiting resistors.

The SOT883 package features a leadless ultra-small footprint (1.0 × 0.6 × 0.5 mm) with three solder lands, optimized for high-density reflow assembly. Thermal resistance from junction to ambient is 500 K/W under standard FR4 mounting conditions, supporting stable operation at up to 250 mW total power dissipation.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V: Maximum safe collector-emitter voltage with base open; defines off-state blocking capability in switching applications.
IO −100 mA: Continuous DC output current; supports driving small relays, LEDs, or logic inputs without external current amplification.
R1 47 kΩ (33–61 kΩ): Input bias resistor value; sets base current magnitude when driven by 3.3 V or 5 V logic levels.
R2/R1 0.21 (0.17–0.26): Ratio determining internal feedback path; stabilizes operating point against β variation and temperature drift.
VCE(sat) −150 mV @ IC = −10 mA, IB = −0.5 mA: Low saturation voltage ensures minimal power loss and heat generation during on-state conduction.
Ptot 250 mW @ Tamb ≤ 25 °C: Total power dissipation limit in SOT883 package; constrains maximum continuous switching duty cycle in thermally unmanaged layouts.
Cc 2 pF @ VCB = −10 V, f = 1 MHz: Collector capacitance; impacts high-frequency response and rise/fall times in digital switching.

Pinout & Package

SOT883 (SC-101) is a leadless ultra-small plastic package measuring 1.0 × 0.6 × 0.5 mm with three solder lands. It requires reflow-only assembly per JEDEC J-STD-020 and is rated for 250 mW power dissipation at 25 °C ambient.

Pin/Terminal Circuit Role Design Meaning
1 Input (base) Connected internally to R1; accepts logic-level input voltage (e.g., 0 V or 3.3 V) to control transistor conduction state.
2 GND (emitter) Common reference node; tied to system ground; serves as current return path for both input and output circuits.
3 Output (collector) Switched high-side output node; sinks current from load connected between VCC and pin 3 when transistor is active.

Key Features

Feature Design Value
Integrated R1/R2 bias network Eliminates need for two external resistors, reducing BOM count and PCB area by ≥2 components per switch node.
Low VCE(sat) −150 mV enables <150 µW conduction loss at 1 mA load, critical for battery-powered sensor interfaces.
SOT883 ultra-compact footprint 1.0 × 0.6 mm body size allows placement in tight spaces such as wearable device flex PCBs or multi-layer modules.
−50 V VCEO rating Supports reliable operation in 24 V industrial control IO modules where transient overvoltage may occur.
JEDEC-compliant reflow profile Validated for standard Pb-free reflow (J-STD-020), ensuring manufacturability in high-volume SMT lines without special process tuning.

Applications

LED Driver Circuit Microcontroller GPIO Expander

Use Scenario: Driving a single red LED (2.1 V forward voltage) from a 3.3 V MCU GPIO pin in a portable medical sensor.

IC Role / Device Role / Timing Role: High-side switch that sinks LED current through emitter-to-ground path, enabling direct logic-level control without level-shifting.

Use Value: Eliminates need for discrete base resistor and reduces layout area by 1.2 mm² versus discrete BJT + resistor solution.

Use Scenario: Adding two extra low-speed digital outputs to an STM32L4 microcontroller with all GPIOs allocated.

IC Role / Device Role / Timing Role: Logic-level translator and current buffer, converting 3.3 V MCU output to −100 mA capable sink for external peripherals.

Use Value: Enables direct connection to 5 V tolerant loads while maintaining MCU's low-power sleep mode integrity via controlled leakage paths.

Industrial Sensor Interface USB-C Power Path Control

Use Scenario: Isolating and conditioning NPN open-collector output from a temperature sensor before feeding into a PLC input card.

IC Role / Device Role / Timing Role: Level-shifting inverter stage that converts active-low sensor signal to active-high PLC-compatible signal.

Use Value: Provides clean 0 V/−50 V swing with <1 µs propagation delay, meeting IEC 61000-4-5 surge immunity requirements via built-in clamping margin.

Use Scenario: Controlling VBUS enable/disable in a USB-C port controller design requiring fast, low-leakage power gating.

IC Role / Device Role / Timing Role: Low-leakage (−1 µA ICEO) high-side switch managing 5 V power rail to downstream PD sink circuitry.

Use Value: Ensures <100 nA standby current draw when disabled, extending battery life in portable USB-C accessories beyond 30 days.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PDTC144VM NPN complement with identical SOT883 package, R1 = 47 kΩ, R2 = 10 kΩ, but opposite polarity and +50 V VCEO. Requires inverted logic drive and sourcing (not sinking) output configuration; unsuitable for high-side switch topologies. Select only when circuit topology mandates NPN-based low-side switching with same bias ratio and footprint.
EMH11T2R PNP RET in SOT-723 (0.8 × 0.6 × 0.35 mm); R1 = 47 kΩ, R2 = 10 kΩ, but lower Ptot = 150 mW and higher Rth(j-a) = 625 K/W. Not suitable for >60 mA continuous loads or ambient temperatures above 60 °C due to thermal derating limitations. Choose only for ultra-thin applications where height <0.35 mm is mandatory and power demand remains below 80 mW.

Compared with PDTC144VM, PDTA144VM enables high-side sinking configurations inaccessible to NPN devices; compared with EMH11T2R, it delivers 67% higher power handling and superior thermal performance in identical board area, making it preferred for industrial-grade reliability.

Availability

PDTA144VM is available at Aetrix Electronics and suitable for industrial sensor interfaces, portable medical device LED drivers, USB-C power path control, and microcontroller GPIO expansion requiring stable component supply and long-term lifecycle support.

Supply support for PDTA144VM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It focuses on automotive, industrial, computing, consumer, and wearable markets.

PDTA144VM belongs to the PDTA144V series of PNP resistor-equipped transistors, engineered specifically for space-constrained logic interface and general-purpose switching applications where component count reduction and assembly efficiency are critical.

FAQ

What is the maximum recommended DC current for continuous operation of PDTA144VM?

The absolute maximum DC output current (IO) is −100 mA, but sustained operation at this level requires strict thermal management. At 25 °C ambient and standard FR4 mounting, the device reaches thermal limit at ~−85 mA due to its 250 mW Ptot rating and 500 K/W Rth(j-a). For reliable 24/7 operation, design for ≤−60 mA with 25 °C margin.

Can PDTA144VM be used with 1.8 V logic input signals?

No - the guaranteed on-state input voltage (VI(on)) ranges from −6 V to −3.8 V, meaning it requires ≥3.8 V negative swing relative to emitter (i.e., ≥3.8 V below GND) to ensure full saturation. A 1.8 V logic high cannot forward-bias the internal R1 network sufficiently; minimum compatible logic is 3.3 V with proper reference grounding.

Is reflow soldering mandatory for the SOT883 package?

Yes - Nexperia explicitly states reflow soldering is the only recommended method for SOT883. The package lacks leads and relies on solder land wetting for mechanical and thermal integrity. Hand-soldering risks pad lifting, voiding, or insufficient intermetallic formation, compromising long-term reliability and thermal performance.

How does the R2/R1 ratio affect switching behavior in practical circuits?

The R2/R1 ratio of 0.21 sets the internal feedback gain, stabilizing the transistor's operating point across temperature and β variation. In practice, this ratio ensures consistent IC/IB = 20 at VCE = −5 V, preventing thermal runaway during extended on-state periods and enabling predictable timing in RC-coupled pulse circuits.

PDTA144VM,315 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
Frequency - Transition:
-
Power - Max:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

PDTA144VM,315 FAQ

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The price and inventory of PDTA144VM,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA144VM,315 is usually 5 days.

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All PDTA144VM,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA144VM,315 meets industry standards.

7.What is the process for return or replacement of PDTA144VM,315?

All PDTA144VM,315 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA144VM,315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTA144VM,315 part is unused and in its original packaging.

Return procedure for PDTA144VM,315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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