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NXP Semiconductors PDTB113EK,115
- Part No.:
- PDTB113EK,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PDTB113EK,115.pdf
- Description:
- TRANS PREBIAS PNP 50V 0.5A SMT3
- Quantity:
- Payment:
- Shipping:
Inventory:4,586
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Product details
Overview
PDTB113EK from NXP Semiconductors is a PNP resistor-equipped transistor (RET) designed for digital switching in automotive and industrial control circuits, featuring built-in bias resistors R1 = 1 kΩ and R2 = 1 kΩ, −50 V collector-emitter voltage rating, −500 mA DC output current capability, and ±10 % resistor ratio tolerance.
For engineers reviewing the PDTB113EK datasheet, PDTB113EK pinout, PDTB113EK application, or PDTB113EK equivalent, this device serves as a cost-optimized, surface-mount alternative to discrete BJT + resistor combinations in load switching, IC input control, and low-power logic interfacing where simplified layout and reduced component count are critical.
Technical Context
The PDTB113EK integrates two precision thin-film bias resistors (R1 = 1 kΩ, R2 = 1 kΩ) directly into a monolithic PNP silicon die, eliminating external base-resistor placement and enabling single-pin drive operation. Its internal resistor ratio of 0.9–1.1 ensures consistent turn-on behavior across temperature and process variation.
Designed for direct interface with TTL/CMOS logic outputs, it delivers guaranteed −500 mA sink current at VCE = −0.3 V with IB = −2.5 mA, while maintaining off-state leakage below −0.5 μA at VCE = −50 V and VI(off) ≤ −1.5 V - supporting robust noise immunity in noisy environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter voltage under open-base conditions; enables use in 24 V industrial bus and 12 V automotive systems with margin. |
| IO (DC) | −500 mA: Continuous DC sink current capability; supports driving relays, LEDs, and small solenoids without external heat sinking. |
| R1 | 1.0 kΩ ±30 % (0.7–1.3 kΩ): Input bias resistor value; sets base current for predictable saturation with standard logic high levels. |
| R2/R1 | 1.0 ±10 % (0.9–1.1): Precision resistor ratio ensuring stable current gain and consistent switching thresholds across units. |
| VI(on) | −1.4 V typical at IC = −20 mA: Minimum input voltage required to fully saturate; compatible with 3.3 V and 5 V CMOS/TTL outputs. |
| hFE | 33 minimum at VCE = −5 V, IC = −50 mA: DC current gain sufficient for reliable digital on/off operation without external gain staging. |
| VCEsat | −0.3 V max at IC = −50 mA, IB = −2.5 mA: Low saturation voltage minimizes power loss and self-heating during conduction. |
Pinout & Package
SOT346 (SC-59A / TO-236) plastic surface-mounted package with 3 leads; compact 3.0 × 1.7 mm footprint, 0.95 mm height, and standard gull-wing lead form for reflow compatibility.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connected internally to R1; accepts logic-level drive signal; no external base resistor needed. |
| 2 | GND (emitter) | Common reference node; tied to system ground; provides return path for load current. |
| 3 | output (collector) | Sinks load current to emitter; connects to switched load (e.g., relay coil, LED anode); rated for −500 mA continuous. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in bias resistors R1 and R2 | Eliminates two external components per switch channel, reducing BOM count and PCB area in multi-channel driver designs. |
| ±10 % R2/R1 tolerance | Ensures uniform turn-on voltage and current gain across production lots, improving batch-to-batch consistency in automated test. |
| −500 mA output current rating | Supports direct driving of medium-power loads (e.g., 24 V/200 mW relays) without external amplification or heatsinking. |
| −50 V VCEO rating | Provides 2× safety margin over common 24 V industrial rails and 12 V automotive systems, reducing need for clamping diodes. |
| Low VI(off) ≤ −1.5 V | Guarantees reliable cutoff with logic-low signals down to −1.5 V, preventing false triggering in electrically noisy environments. |
Applications
| Automotive Body Control Module | Industrial PLC Output Stage |
|---|---|
Use Scenario: Switching door lock actuators, interior lighting, and HVAC fan controls in 12 V vehicle systems. IC Role / Device Role / Timing Role: PNP RET acting as low-side load switch, sinking current from 12 V supply through electromechanical loads. Use Value: Reduces component count by replacing discrete BJT + two resistors per channel, lowering assembly cost and improving reliability in vibration-prone environments. |
Use Scenario: Driving 24 V DC solenoid valves and indicator LEDs in programmable logic controller output modules. IC Role / Device Role / Timing Role: Digital output stage transistor providing isolated, logic-compatible switching with built-in current limiting. Use Value: Enables compact, high-density output card design with guaranteed −500 mA drive per channel and thermal resistance of 500 K/W in SOT346 package. |
| Consumer Appliance Control Board | IoT Sensor Node Power Management |
Use Scenario: Controlling buzzer drivers, display backlight segments, and motor enable lines in white goods control boards. IC Role / Device Role / Timing Role: Logic-level controlled PNP switch interfacing microcontroller GPIOs to higher-voltage peripherals. Use Value: Simplifies firmware design by removing need for external level-shifting or base-current calculation; VI(on) = −1.4 V ensures compatibility with 3.3 V MCU outputs. |
Use Scenario: Enabling/disabling sensor sub-circuits and RF modules in battery-powered edge devices to minimize standby current. IC Role / Device Role / Timing Role: Low-leakage (ICEO ≤ −0.5 μA) PNP switch used for power gating with minimal quiescent drain. Use Value: Extends battery life via ultra-low off-state current and eliminates parasitic paths caused by discrete resistor networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTB113ET | SOT23 package (smaller footprint, same electrical specs); 250 mW power dissipation vs. 250 mW for PDTB113EK; identical R1/R2 values and VCEO/IO ratings. | Better suited for ultra-compact layouts where board space is constrained; lower thermal resistance not applicable due to smaller pad area. | Select PDTB113ET when minimizing PCB area is prioritized over thermal margin; both share same marking code family and drive characteristics. |
| BC807-40,115 | Standard PNP BJT (no built-in resistors); requires external base resistor network; hFE = 250–630 (higher gain but less predictable drive); same SOT346 package. | Used where variable gain or adjustable switching threshold is needed; lacks integrated resistor ratio stability and VI(on)/VI(off) guarantees. | Choose BC807-40,115 only when fine-tuned base current control is required; PDTB113EK offers faster design cycle and lower assembly cost for fixed-ratio digital switching. |
Compared with PDTB113ET, the PDTB113EK offers identical electrical performance in a thermally optimized SOT346 package with 250 mW rating and standardized gull-wing leads; versus BC807-40,115, it eliminates two passives per channel and guarantees resistor-matched turn-on behavior without layout-dependent parasitics.
Availability
PDTB113EK is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and consumer appliance control boards requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for PDTB113EK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PDTB113EK belongs to NXP's resistor-equipped transistor (RET) product line, engineered to replace discrete BJT + resistor combinations in cost-sensitive, high-volume digital switching applications with guaranteed matching and simplified qualification.
FAQ
What is the maximum continuous collector current rating for the PDTB113EK?
The PDTB113EK is rated for −500 mA DC output current under standard mounting conditions on FR4 PCB with single-sided copper. This rating applies at Tamb ≤ 25 °C; derating is required above ambient temperatures per the thermal resistance of 500 K/W specified for the SOT346 package. The PDTB113EK maintains this current capability while staying within its −50 V VCEO limit and −0.3 V VCEsat specification.
Does the PDTB113EK require external base resistors for operation?
No, the PDTB113EK does not require external base resistors. It integrates R1 = 1 kΩ and R2 = 1 kΩ thin-film resistors internally, enabling direct connection of a logic-level input signal to Pin 1 (base input). This eliminates two external components per channel and ensures consistent VI(on) and VI(off) behavior without layout-dependent variations. The PDTB113EK is designed specifically for resistor-free digital switching.
What is the package type and lead finish for PDTB113EK?
The PDTB113EK is supplied in the SOT346 (SC-59A / TO-236) plastic surface-mounted package with gull-wing leads. Its lead finish is tin-plated, compliant with standard reflow soldering profiles including Pb-free processes. The package measures 3.0 mm × 1.7 mm with a maximum height of 0.95 mm, and is marked with code "E4" per NXP's ordering information table.
How does the PDTB113EK compare to the BC807 series in digital applications?
The PDTB113EK serves as a cost-saving, drop-in alternative to the BC807 series in digital switching applications by integrating bias resistors and guaranteeing R2/R1 = 1.0 ±10 %. Unlike the BC807-40,115 - which requires two external resistors and exhibits wide hFE variation (250–630) - the PDTB113EK delivers consistent VI(on), VI(off), and saturation behavior without manual tuning. The PDTB113EK reduces pick-and-place steps and improves first-pass yield in automated assembly.
What is the guaranteed off-state leakage current for PDTB113EK?
The PDTB113EK guarantees ICEO (collector-emitter cut-off current) ≤ −0.5 μA at VCE = −50 V and IB = 0 A, and IEBO (emitter-base cut-off current) ≤ −4.0 mA at VEB = −5 V and IC = 0 A. These values ensure reliable blocking in high-impedance digital control paths, especially in automotive and industrial environments where electromagnetic interference could otherwise cause unintended conduction. The PDTB113EK's low leakage supports robust system-level noise immunity.
PDTB113EK,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 1 kOhms
- Resistor - Emitter Base (R2):
- 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMT3; MPAK
PDTB113EK,115 FAQ
1.How can I place an order for PDTB113EK,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTB113EK,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTB113EK,115 reliable?
The price and inventory of PDTB113EK,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTB113EK,115 is usually 5 days.
3.What payment methods are accepted for PDTB113EK,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTB113EK,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTB113EK,115?
PDTB113EK,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTB113EK,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTB113EK,115?
For technical support, including PDTB113EK,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTB113EK,115 requirements.
6.How does Aetrix verify that PDTB113EK,115 is sourced from the original manufacturer or authorized distributors?
All PDTB113EK,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTB113EK,115 meets industry standards.
7.What is the process for return or replacement of PDTB113EK,115?
All PDTB113EK,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTB113EK,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTB113EK,115 part is unused and in its original packaging.
Return procedure for PDTB113EK,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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