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NXP Semiconductors PDTB113ES,126
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- Part No.:
- PDTB113ES,126
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
PDTB113ES,126.pdf
- Description:
- TRANS PREBIAS PNP 50V TO92-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,778
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Product details
Overview
PDTB113ES,126 from NXP Semiconductors is a PNP resistor-equipped transistor (RET) in TO-92 (SOT54) package, designed for digital switching applications with built-in bias resistors R1 = 1 kΩ and R2 = 1 kΩ, −50 V VCEO, −500 mA IO, and ±10 % R2/R1 tolerance-used in automotive and industrial load control circuits.
For engineers reviewing the PDTB113ES,126 datasheet, PDTB113ES,126 pinout, PDTB113ES,126 application, or PDTB113ES,126 equivalent, key selection considerations include its through-hole SOT54 package, integrated base resistors eliminating external components, guaranteed −500 mA DC output current, and −1.4 V typical VI(on) at −20 mA collector drive.
Technical Context
The PDTB113ES,126 integrates two precision thin-film resistors (R1 = 1 kΩ, R2 = 1 kΩ) directly into a PNP bipolar die, enabling single-pin base drive without external bias networks. Its R2/R1 ratio of 0.9–1.1 ensures predictable saturation behavior across temperature.
It operates as a digital switch with defined VI(on)/VI(off) thresholds (−1.0 to −1.8 V and −0.6 to −1.5 V), supports −50 V collector-emitter blocking, and delivers −0.3 V typical VCE(sat) at IC = −50 mA/IB = −2.5 mA-optimized for low-power logic-level interfacing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - maximum safe collector-emitter voltage with open base; defines off-state blocking capability in high-side switch configurations |
| IO | −500 mA - guaranteed continuous DC output current; supports medium-power loads like relays and LED arrays |
| R1 | 0.7–1.3 kΩ - input bias resistor tolerance; sets base current magnitude and enables direct microcontroller GPIO drive |
| R2/R1 | 0.9–1.1 - resistor ratio tolerance; ensures stable current gain and consistent turn-on characteristics across production lots |
| VI(on) | −1.0 to −1.8 V - on-state input voltage at IC = −20 mA; confirms reliable activation with standard TTL/CMOS logic levels |
| Ptot | 500 mW - total power dissipation at Tamb ≤ 25 °C on FR4 PCB; determines thermal derating requirements in enclosed environments |
| hFE | 33 min - DC current gain at VCE = −5 V, IC = −50 mA; validates sufficient amplification for saturated switching operation |
Pinout & Package
Package: SOT54 (JEITA SC-43A / JEDEC TO-92), plastic single-ended leaded through-hole package with 3 leads; 5.2 mm × 5.0 mm × 14.5 mm body, 2.54 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connected internally to R1; accepts logic-level drive signal; no external pull-up or bias required |
| 2 | output (collector) | High-current switched node; connects to load supply rail (e.g., +12 V automotive); handles −500 mA DC |
| 3 | GND (emitter) | Common reference terminal; ties to system ground; forms return path for load current and internal resistor network |
Key Features
| Feature | Design Value |
|---|---|
| Built-in R1 and R2 bias resistors | Eliminates need for two external SMT resistors, reducing BOM count and PCB area in digital interface designs |
| ±10 % R2/R1 ratio tolerance | Ensures consistent saturation behavior and predictable switching thresholds across temperature and process variation |
| −500 mA output current rating | Supports direct driving of moderate-power loads such as solenoids, small relays, and multi-segment LED displays |
| −50 V VCEO rating | Enables use in 24 V industrial control systems and 12 V automotive battery-supplied circuits with load dump margin |
| VI(on) = −1.4 V typical | Guarantees reliable turn-on with standard 3.3 V or 5 V microcontroller outputs without level-shifting circuitry |
Applications
| Automotive Body Control Module | Industrial PLC Digital Output |
|---|---|
Use Scenario: Switching 12 V incandescent lamps and small solenoids in door lock and lighting subsystems. IC Role / Device Role / Timing Role: High-side PNP switch controlling load current from battery rail to ground. Use Value: Built-in resistors enable direct MCU GPIO drive, eliminating discrete bias networks and improving layout reliability in vibration-prone environments. |
Use Scenario: Driving 24 V DC indicator LEDs and relay coils in programmable logic controller output modules. IC Role / Device Role / Timing Role: Logic-compatible digital output stage providing galvanically isolated load switching. Use Value: −50 V VCEO and −500 mA IO support industrial supply transients and sustained load currents without external protection. |
| Consumer Appliance Power Sequencing | Medical Diagnostic Equipment Interface |
Use Scenario: Enabling/disabling auxiliary power rails (e.g., sensor bias supplies) during startup and fault recovery sequences. IC Role / Device Role / Timing Role: Low-power, logic-controlled enable switch with precise VI(on)/VI(off) thresholds. Use Value: Tight R2/R1 ratio (0.9–1.1) ensures repeatable timing margins between control signal assertion and load activation. |
Use Scenario: Isolating microcontroller I/O from higher-voltage analog front-end bias supplies in portable diagnostic devices. IC Role / Device Role / Timing Role: Level-translating digital isolator for safety-critical signal paths. Use Value: −10 V VEBO and −500 mW Ptot allow robust operation under ESD events and transient overvoltage conditions per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP digital switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC807-40,115 | Discrete PNP BJT without integrated resistors; requires external R1/R2; hFE = 250–630 vs. fixed gain via RET topology | Higher design flexibility but increases component count and layout complexity; less suitable for space-constrained digital interfaces | Select when adjustable bias or higher hFE is required; not drop-in compatible due to missing internal resistors |
| PDTB123ES,126 | Same SOT54 package and RET architecture, but R1 = 2.2 kΩ, R2 = 2.2 kΩ; lower input current demand; VI(on) shifted to −1.2 to −2.0 V | Better suited for ultra-low-power MCU GPIOs or higher-impedance logic families; reduced drive strength for smaller loads | Choose for lower base current consumption where −250 mA load current suffices; identical footprint and mounting |
Compared with BC807-40,115 and PDTB123ES,126, the PDTB113ES,126 provides optimal balance of drive strength (−500 mA), logic compatibility (−1.4 V VI(on)), and integration (no external resistors), making it ideal for cost-sensitive, high-volume automotive and industrial digital output stages.
Availability
PDTB113ES,126 is available at Aetrix Electronics and suitable for automotive body control, industrial PLC outputs, and consumer appliance power sequencing requiring stable component supply and long-term manufacturability.
Supply support for PDTB113ES,126 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PDTB113ES,126 belongs to NXP's resistor-equipped transistor (RET) family, engineered to replace discrete BJT + resistor combinations in digital switching applications-reducing bill-of-materials cost and improving assembly yield in high-volume manufacturing.
FAQ
What is the package type and mounting style of PDTB113ES,126?
The PDTB113ES,126 uses the SOT54 (TO-92) package-a plastic single-ended leaded through-hole package with three leads. It is designed for wave soldering or manual insertion onto FR4 PCBs, with dimensions of 5.2 mm × 5.0 mm × 14.5 mm and 2.54 mm lead pitch. This contrasts with surface-mount variants like PDTB113ET (SOT23) and PDTB113EK (SOT346).
Does PDTB113ES,126 require external base resistors for operation?
No, the PDTB113ES,126 does not require external base resistors. It integrates R1 = 1 kΩ and R2 = 1 kΩ internally, enabling direct connection of a logic-level signal to Pin 1 (input/base). This eliminates two external components and simplifies PCB layout-confirmed by NXP's "Built-in bias resistors" feature and pinning diagram showing internal R1/R2 connections.
What is the maximum continuous collector current rating for PDTB113ES,126?
The PDTB113ES,126 has a guaranteed −500 mA DC output current (IO) rating under standard test conditions. This value is specified in Table 2 (Quick reference data) and Table 6 (Limiting values) of the NXP datasheet, and applies to operation at Tamb ≤ 25 °C on an FR4 PCB with standard footprint.
Can PDTB113ES,126 be used in automotive applications?
Yes, the PDTB113ES,126 is explicitly qualified for automotive and industrial digital applications per NXP's Product profile Section 1.4. Its −50 V VCEO, −500 mA IO, and operation across −65 °C to +150 °C ambient temperature (Tamb) meet AEC-Q101 stress test requirements for discrete semiconductors in body electronics and power distribution modules.
What is the typical on-state input voltage (VI(on)) for PDTB113ES,126?
The typical VI(on) for PDTB113ES,126 is −1.4 V at VCE = −0.3 V and IC = −20 mA, with a guaranteed range of −1.0 V to −1.8 V. This parameter is documented in Table 8 (Characteristics) and ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs without additional level-shifting circuitry.
PDTB113ES,126 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 1 kOhms
- Resistor - Emitter Base (R2):
- 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- -
- Power - Max:
- 500 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
PDTB113ES,126 FAQ
1.How can I place an order for PDTB113ES,126 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTB113ES,126 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTB113ES,126 reliable?
The price and inventory of PDTB113ES,126 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTB113ES,126 is usually 5 days.
3.What payment methods are accepted for PDTB113ES,126?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTB113ES,126 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTB113ES,126?
PDTB113ES,126 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTB113ES,126 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTB113ES,126?
For technical support, including PDTB113ES,126 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTB113ES,126 requirements.
6.How does Aetrix verify that PDTB113ES,126 is sourced from the original manufacturer or authorized distributors?
All PDTB113ES,126 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTB113ES,126 meets industry standards.
7.What is the process for return or replacement of PDTB113ES,126?
All PDTB113ES,126 units undergo pre-shipment inspection (PSI). If there is an issue with PDTB113ES,126, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTB113ES,126 part is unused and in its original packaging.
Return procedure for PDTB113ES,126:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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