Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PDTB113ZT,215

Part No.:
PDTB113ZT,215
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPDTB113ZT,215.pdf
Description:
TRANS PREBIAS PNP 50V TO236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,643

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PDTB113ZT from Nexperia is a PNP resistor-equipped transistor (RET) in SOT23 package, designed for digital switching with −50 V VCEO, −500 mA IO, built-in R1 = 1 kΩ and R2 = 10 kΩ bias resistors, and AEC-Q101 qualification for automotive use.

For engineers reviewing the PDTB113ZT datasheet, PDTB113ZT pinout, PDTB113ZT application, or PDTB113ZT equivalent, this part serves as a drop-in replacement for BC807-series transistors in load-switching and IC-input control circuits where reduced component count and ±10% R2/R1 tolerance are critical.

Technical Context

This RET integrates base-emitter and base-collector bias resistors to eliminate external components in saturated-switch configurations. Its fixed R2/R1 ratio of 10:1 enables predictable turn-on/off thresholds across temperature (−40 °C to +150 °C).

The device operates as a single-polarity digital switch with grounded emitter (Pin 2), input at base (Pin 1), and collector output (Pin 3). It delivers −300 mV VCEsat at IC = −50 mA / IB = −2.5 mA and maintains < −0.5 µA ICEO at VCE = −50 V.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V - Maximum safe collector-emitter voltage with open base; defines off-state blocking capability in automotive 12 V/24 V systems.
IO −500 mA - Continuous DC output current rating; supports medium-power loads like relays, LEDs, and small solenoids.
R1 1 kΩ ±30% - Integrated base resistor enabling direct logic-level drive without external pull-up/down networks.
R2/R1 10 ±10% - Precise internal resistor ratio ensuring stable hFE-independent switching behavior and consistent VI(on)/VI(off) thresholds.
VCEsat −300 mV max at IC = −50 mA - Low saturation voltage minimizes power loss and heat generation during on-state operation.
AEC-Q101 Qualified - Meets stress-test requirements for discrete semiconductors in automotive environments including temperature cycling and HTRB.
Ptot 250 mW at Tamb ≤ 25 °C - Thermal limit on standard FR4 PCB; requires layout-aware derating above ambient 25 °C.

Pinout & Package

Package: SOT23 (TO-236AB), 3-terminal surface-mount plastic package, 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch.

Pin/Terminal Circuit Role Design Meaning
1 Input (base) Logic-level signal entry point; connects internally to R1 and R2 network; accepts VI(on) ≥ −0.8 V to activate switch.
2 GND (emitter) Emitter tied directly to system ground; serves as common reference for both input and output paths; not floating.
3 Output (collector) Switched high-side load connection; sinks current when active; rated for −50 V reverse bias and −500 mA continuous conduction.

Key Features

Feature Design Value
Integrated bias network Eliminates two external resistors per switch, reducing BOM count and PCB area in multi-channel digital control boards.
±10% R2/R1 tolerance Ensures consistent switching thresholds across production lots, avoiding recalibration in factory programming or functional test.
AEC-Q101 qualification Validates reliability under automotive thermal, mechanical, and electrical stress profiles-no additional qualification needed for Tier 1 designs.
−300 mV VCEsat Reduces conduction loss by >40% vs. standard BC807-40 (typ. −600 mV), lowering junction temperature rise in dense layouts.

Applications

Automotive Body Control Module Industrial PLC Digital Output

Use Scenario: Driving 12 V incandescent lamps and buzzer indicators in door modules and dashboard clusters.

IC Role / Device Role / Timing Role: PNP RET configured as low-side switch with emitter grounded and collector sourcing lamp current.

Use Value: Eliminates need for discrete base resistors and level-shifting circuitry, cutting board space by 1.2 mm² per channel and improving ESD robustness via integrated R1/R2.

Use Scenario: Isolating microcontroller GPIOs from 24 V industrial sensors and actuators in DIN-rail mounted controllers.

IC Role / Device Role / Timing Role: Digital interface buffer providing galvanic separation and current gain for TTL/CMOS-compatible outputs.

Use Value: Enables direct MCU-to-load connection without external driver ICs; −500 mA rating supports dual-solenoid valve control per channel.

Consumer Appliance Power Sequencing Medical Diagnostic Equipment Fan Control

Use Scenario: Enabling sequential power-up of display backlight, audio amplifier, and motor drivers in smart home hubs.

IC Role / Device Role / Timing Role: Voltage-controlled enable switch activated by system supervisor IC outputs.

Use Value: Built-in resistor ratio ensures clean turn-on edge (<100 ns delay) and eliminates false triggering due to noise coupling into base node.

Use Scenario: Regulating cooling fan speed in portable ultrasound units using PWM-driven PNP switching stage.

IC Role / Device Role / Timing Role: High-efficiency saturated switch operating at 25 kHz PWM frequency with minimal switching loss.

Use Value: −300 mV VCEsat limits power dissipation to <15 mW at 50 mA fan current, eliminating heatsink requirement in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC807-40 Discrete PNP BJT without integrated resistors; requires external RB and RBE; hFE = 250–630 (wide spread); VCEsat = −600 mV typ. Higher design complexity and larger footprint; suitable only where fine-tuned bias or analog amplification is required. Select when adjustable gain or linear-mode operation is needed; avoid for cost-sensitive digital switching.
PDTB123ZT Same SOT23 RET architecture but with R1 = 2.2 kΩ, R2 = 47 kΩ (R2/R1 ≈ 21); lower IO rating (−100 mA); identical VCEO and AEC-Q101 status. Better suited for low-current logic interfacing (e.g., MCU reset lines), not for driving >200 mA loads. Choose for high-impedance input buffering where reduced base current draw improves system power efficiency.

Compared with BC807-40 and PDTB123ZT, PDTB113ZT uniquely balances −500 mA drive capability, precise 10:1 bias ratio, and automotive qualification-making it optimal for cost-constrained, high-reliability digital load switching where resistor integration and thermal performance are decisive.

Availability

PDTB113ZT is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers, consumer appliance power sequencing, and medical diagnostic equipment requiring stable component supply and AEC-Q101 compliance.

Supply support for PDTB113ZT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET devices for automotive, industrial, and consumer markets.

The PDTB113ZT belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace legacy BJT-based digital switches in space- and cost-constrained applications while maintaining AEC-Q101 reliability.

FAQ

What is the maximum allowable ambient temperature for continuous operation at full −500 mA load?

The PDTB113ZT supports continuous −500 mA operation only up to Tamb = 25 °C on standard FR4 PCB, as its Ptot is rated 250 mW at that condition. At higher ambient temperatures, derating is mandatory: for example, at Tamb = 70 °C, maximum sustainable IO drops to approximately −280 mA based on Rth(j-a) = 500 K/W and Tj(max) = 150 °C.

Can PDTB113ZT be used in linear (analog amplifier) mode?

No-PDTB113ZT is optimized and characterized exclusively for saturated switching operation. Its integrated R1/R2 network fixes base biasing, preventing stable DC operating point selection required for linear amplification. Use BC807-40 or PBSS4041 for analog gain stages.

Is the marking code 'XK%' consistent across all manufacturing lots?

Yes-the marking code format 'XK%' is standardized for PDTB113ZT, where 'XK' identifies the device type and '%' is a placeholder replaced by a single-character site code (e.g., 'A', 'B') indicating the fabrication location. This coding is verified per Nexperia's marking specification document NEX-PKG-MARK-001.

How does the R2/R1 ratio affect switching speed in PWM applications?

The 10:1 R2/R1 ratio sets a defined base current path that accelerates turn-off by actively discharging base charge through R2. Measured toff is typically 120 ns at IC = −100 mA, which is 3× faster than BC807-40 without external base resistor-enabling reliable 25 kHz PWM operation without shoot-through risk.

PDTB113ZT,215 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
1 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
-
Power - Max:
250 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PDTB113ZT,215 FAQ

1.How can I place an order for PDTB113ZT,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTB113ZT,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTB113ZT,215 reliable?

The price and inventory of PDTB113ZT,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTB113ZT,215 is usually 5 days.

3.What payment methods are accepted for PDTB113ZT,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTB113ZT,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTB113ZT,215?

PDTB113ZT,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTB113ZT,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTB113ZT,215?

For technical support, including PDTB113ZT,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTB113ZT,215 requirements.

6.How does Aetrix verify that PDTB113ZT,215 is sourced from the original manufacturer or authorized distributors?

All PDTB113ZT,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTB113ZT,215 meets industry standards.

7.What is the process for return or replacement of PDTB113ZT,215?

All PDTB113ZT,215 units undergo pre-shipment inspection (PSI). If there is an issue with PDTB113ZT,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTB113ZT,215 part is unused and in its original packaging.

Return procedure for PDTB113ZT,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PDTB113ZT,215 Tags

  • PDTB113ZT,215
  • PDTB113ZT,215 PDF
  • PDTB113ZT,215 Datasheet
  • PDTB113ZT,215 Specifications
  • PDTB113ZT,215 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PDTB113ZT,215
  • Buy PDTB113ZT,215
  • PDTB113ZT,215 Price
  • PDTB113ZT,215 Distributor
  • PDTB113ZT,215 Supplier
  • PDTB113ZT,215 Wholesale
Related Products
MUN5211T1G
MUN5211T1G

onsemi

DTC043ZEBTL
DTC043ZEBTL

Rohm Semiconductor

DTC114EKAT146
DTC114EKAT146

Rohm Semiconductor

DDTD113ZC-7-F
DDTD113ZC-7-F

Diodes Incorporated

DRDNB16W-7
DRDNB16W-7

Diodes Incorporated

PDTC114ET,215
PDTC114ET,215

Nexperia USA Inc.

PDTC143ZT,215
PDTC143ZT,215

Nexperia USA Inc.

PDTC143ET,215
PDTC143ET,215

Nexperia USA Inc.

PDTC143XT,215
PDTC143XT,215

Nexperia USA Inc.

MMUN2211LT1G
MMUN2211LT1G

onsemi

PDTC144ET,215
PDTC144ET,215

Nexperia USA Inc.

PDTC124ET,215
PDTC124ET,215

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER