Nexperia USA Inc. PDTB114ETR
- Part No.:
- PDTB114ETR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PDTB114ETR.pdf
- Description:
- TRANS PREBIAS PNP 50V TO236AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,900
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Product details
Overview
PDTB114ETR from Nexperia is a PNP resistor-equipped transistor (RET) in SOT23 (TO-236AB) package, designed for digital switching applications with built-in 10 kΩ input bias resistor (R1) and 10 kΩ base-emitter resistor (R2), −50 V VCEO, −500 mA IO, and AEC-Q101 qualification for automotive use.
For engineers reviewing the PDTB114ETR datasheet, PDTB114ETR pinout, PDTB114ETR application, or PDTB114ETR equivalent, key selection criteria include its integrated bias network ratio (R2/R1 = 1.0 ± 0.1), low VCE(sat) of −100 mV at −50 mA/−2.5 mA, high-temperature operation up to 175 °C, and direct replacement capability for discrete BJT + resistor solutions in logic-level interface circuits.
Technical Context
This PNP RET integrates two precision thin-film resistors (R1 = 10 kΩ, R2 = 10 kΩ) directly on-die to form a monolithic current-limiting input stage, eliminating external bias components and reducing PCB footprint. Its internal transistor exhibits hFE ≥ 70 at −50 mA/−5 V and fT = 140 MHz, enabling reliable switching up to several MHz.
The device operates with VI(on) = −1.0 to −3.0 V and VI(off) = −0.6 to −1.5 V, ensuring robust noise immunity in 3.3 V and 5 V digital systems. Thermal resistance Rth(j-a) is 327 K/W on 4-layer FR4, supporting continuous operation at ambient temperatures up to +175 °C when derated per Fig 1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - Maximum safe collector-emitter voltage under open-base conditions; defines voltage headroom for automotive 12 V/24 V load switching. |
| IO | −500 mA - Continuous output current capability; supports driving medium-power relays, LEDs, or MOSFET gates without external amplification. |
| R1 / R2 | 10 kΩ / 10 kΩ - Precision on-die bias resistors with ±10 % tolerance; eliminates need for two external resistors and associated layout area. |
| VCE(sat) | −100 mV @ −50 mA / −2.5 mA - Low saturation voltage minimizes power loss and self-heating during active conduction. |
| hFE | ≥ 70 @ −50 mA / −5 V - DC current gain ensures stable switching behavior across temperature and process variation. |
| fT | 140 MHz - Transition frequency confirms suitability for high-speed digital switching up to ~10–20 MHz with adequate margin. |
| Tj(max) | 175 °C - Maximum junction temperature enables operation in under-hood automotive environments and industrial motor control enclosures. |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mount package: 3-pin, 1.3 mm × 2.9 mm × 1.0 mm body, standard JEDEC outline with gull-wing leads; optimized for reflow and wave soldering per Figures 26–27.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Input (base) | Connected internally to R1 and R2; accepts logic-level drive signals; requires no external pull-up/down. |
| 2 | GND (emitter) | Emitter terminal tied to system ground; serves as common return path for load current and bias network. |
| 3 | Output (collector) | Switched high-side output node; connects to load (e.g., relay coil, LED anode); sinks current to emitter (pin 2). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Stress-tested per automotive discrete semiconductor standard; validated for under-hood and powertrain applications. |
| Integrated R1 + R2 network | Monolithic 10 kΩ/10 kΩ resistor pair with ±10 % matching; reduces BOM count by two passive components and associated placement cost. |
| High-temperature operation | Rated for continuous operation at Tamb = +175 °C; enables use in engine control units, transmission modules, and industrial inverters. |
| Low VCE(sat) | −100 mV at rated current; limits conduction loss to ≤5 mW at 50 mA, improving thermal efficiency in space-constrained designs. |
| Logic-compatible input | VI(on) range of −1.0 to −3.0 V and VI(off) of −0.6 to −1.5 V ensures reliable turn-on/off with standard CMOS/TTL outputs. |
Applications
| Automotive Body Control Module | Industrial PLC Output Stage |
|---|---|
|
Use Scenario: Driving 12 V solenoid valves and indicator LEDs in door lock actuators and lighting control units. IC Role / Device Role: High-side switch replacing discrete PNP + resistor combinations to reduce component count and improve reliability. Use Value: AEC-Q101 qualification and 175 °C operation ensure long-term stability in hot under-dash environments without derating. |
Use Scenario: Isolating microcontroller GPIOs from 24 V DC field loads such as contactors and status indicators. IC Role / Device Role: Logic-level compatible PNP switch providing galvanic separation and current gain between MCU and industrial load. Use Value: Integrated bias network eliminates external resistor matching errors and improves production yield in high-volume PLC assembly. |
| Consumer Appliance Motor Driver | Medical Diagnostic Equipment Interface |
|
Use Scenario: Controlling small DC brush motors and cooling fans in washing machines and HVAC systems. IC Role / Device Role: Medium-current PNP switch interfacing 3.3 V/5 V MCU outputs to motor H-bridge enable lines or fan speed control inputs. Use Value: −500 mA output rating and low VCE(sat) minimize heat generation in sealed appliance enclosures with limited airflow. |
Use Scenario: Enabling/disabling sensor excitation circuits and signal conditioning stages in portable ultrasound and ECG devices. IC Role / Device Role: Precision-switched current source controlled by low-voltage medical SoC outputs. Use Value: Tight R2/R1 ratio tolerance (±10 %) ensures consistent biasing across production batches, critical for calibrated analog front-ends. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTB143ETR | R1 = R2 = 4.7 kΩ; lower input impedance; VI(on) = −1.0 to −2.2 V; hFE = 60 min | Better suited for higher-speed switching where faster turn-on is required, but less noise-immune at low drive levels | Select when driving from weaker logic sources (e.g., open-drain I²C buffers) or needing faster edge rates |
| BC807-40,215 | Discrete PNP BJT (no built-in resistors); requires external RB; VCEO = −45 V; IC = −500 mA; hFE = 250–630 | Higher gain variability and larger board area; lacks AEC-Q101 qualification and integrated thermal robustness | Choose only if design requires adjustable bias or ultra-high hFE, accepting added complexity and qualification overhead |
Compared with PDTB143ETR, PDTB114ETR offers superior noise immunity and higher input impedance due to its 10 kΩ bias network, while BC807-40 demands external components and lacks automotive qualification-making PDTB114ETR optimal for compact, high-reliability digital switching where BOM reduction and qualification are mandatory.
Availability
PDTB114ETR is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers, and consumer appliance motor control requiring stable component supply, AEC-Q101 compliance, and high-temperature performance.
Supply support for PDTB114ETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors, with leadership in logic, discrete, and MOSFET technologies.
PDTB114ETR belongs to the PDTB1xxxT series of resistor-equipped transistors, engineered specifically for automotive and industrial digital switching applications where space, reliability, and qualification are critical.
FAQ
What is the maximum allowable input voltage (VI) for PDTB114ETR?
The absolute maximum input voltage is −50 V (negative-going) and +10 V (positive-going), as specified in Table 6. Exceeding these values risks permanent damage to the on-die bias resistors or transistor junction. For reliable operation, keep VI within −30 V to +7 V in normal use, with typical logic drive centered at 0 V to −3.3 V.
Can PDTB114ETR replace BC807-40 in existing designs without layout changes?
No-PDTB114ETR has different pinout (input/base on pin 1, emitter/GND on pin 2, collector/output on pin 3), whereas BC807-40 uses emitter-collector-base (ECB) order in SOT23. Direct replacement requires PCB redesign. However, it replaces the *combination* of BC807-40 + two external resistors, reducing total component count and footprint.
Is thermal derating required for continuous operation at 100 °C ambient?
Yes. At Tamb = 100 °C, Ptot must be derated from 460 mW (4-layer PCB) to ~280 mW per Fig 1. This corresponds to max IO ≈ −375 mA at VCE(sat) = −100 mV. Full −500 mA rating applies only at Tamb ≤ 25 °C unless heatsinking or forced airflow is used.
Does PDTB114ETR support PWM switching at 20 kHz?
Yes. With fT = 140 MHz and typical switching times in the 10–20 ns range (inferred from VCE(sat) and hFE data), PDTB114ETR fully supports 20 kHz PWM for motor and LED dimming. Ensure gate drive strength meets VI(on)/VI(off) thresholds and layout minimizes parasitic inductance on pin 1 and pin 3 traces.
PDTB114ETR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 10 kOhms
- Resistor - Emitter Base (R2):
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- 140 MHz
- Power - Max:
- 320 mW
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PDTB114ETR FAQ
1.How can I place an order for PDTB114ETR through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTB114ETR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTB114ETR reliable?
The price and inventory of PDTB114ETR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTB114ETR is usually 5 days.
3.What payment methods are accepted for PDTB114ETR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTB114ETR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTB114ETR?
PDTB114ETR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTB114ETR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTB114ETR?
For technical support, including PDTB114ETR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTB114ETR requirements.
6.How does Aetrix verify that PDTB114ETR is sourced from the original manufacturer or authorized distributors?
All PDTB114ETR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTB114ETR meets industry standards.
7.What is the process for return or replacement of PDTB114ETR?
All PDTB114ETR units undergo pre-shipment inspection (PSI). If there is an issue with PDTB114ETR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTB114ETR part is unused and in its original packaging.
Return procedure for PDTB114ETR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTB114ETR Tags

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MUN5211T1G
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DTC114EKAT146
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DRDNB16W-7
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