NXP Semiconductors PDTB123EK,115

Overview

PDTB123EK from NXP Semiconductors is a PNP resistor-equipped transistor (RET) designed for digital switching in automotive and industrial control circuits, featuring built-in bias resistors R1 = R2 = 2.2 kΩ, −50 V V_CEO, −500 mA I_O, ±10 % R2/R1 tolerance, and SOT346 (SC-59A/TO-236) package.

For engineers reviewing the PDTB123EK datasheet, PDTB123EK pinout, PDTB123EK application, or PDTB123EK equivalent, this device serves as a cost-optimized, reduced-component-count alternative to discrete base-resistor BJT configurations in load switching, IC input control, and level-shifting interfaces where stable DC gain and predictable turn-on/off thresholds are required.

Technical Context

The PDTB123EK integrates two precision-matched on-chip resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ) directly between base and emitter/collector to form a monolithic PNP switch with fixed bias network. It operates with VI(on) = −1.0 to −2.0 V at IC = −20 mA and VI(off) = −0.6 to −1.8 V at IC = −100 μA, enabling robust logic-level interfacing without external components.

Its −50 V V_CEO rating and 150 °C maximum junction temperature support operation in 12 V/24 V automotive subsystems and industrial PLC I/O modules. Thermal resistance R_th(j-a) = 500 K/W (SOT346) defines power handling under standard FR4 PCB conditions, limiting continuous DC output to ≤250 mW at Tamb ≤25 °C.

Key Specifications

Pinout & Package

SOT346 (SC-59A/TO-236) is a compact surface-mount plastic package with gull-wing leads, 1.3 mm lead pitch, and 2.5 × 1.7 mm body dimensions. It supports automated assembly and offers thermal resistance of 500 K/W in free air on FR4 PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Compared with PDTB123ET and BC807-40, the PDTB123EK delivers optimal balance of ease-of-use, thermal reliability in standard SMT processes, and guaranteed digital switching behavior-making it ideal for production-grade automotive and industrial control nodes where consistency and assembly efficiency are prioritized.

Availability

PDTB123EK is available at Aetrix Electronics and suitable for automotive interior lighting control, industrial PLC digital output modules, consumer appliance power sequencing, and smart home sensor node power management requiring stable component supply and long-term manufacturability.

Supply support for PDTB123EK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PDTB123E series belongs to NXP's resistor-equipped transistor product line, engineered specifically to replace discrete BJT + resistor combinations in digital switching applications-reducing design time, PCB area, and manufacturing cost while maintaining automotive-grade reliability.

FAQ

What is the maximum continuous collector current rating for PDTB123EK?

The PDTB123EK is rated for −500 mA DC output current under standard mounting conditions (FR4 PCB, single-sided copper). This rating assumes ambient temperature ≤25 °C and accounts for thermal resistance of 500 K/W. At higher temperatures or in enclosed environments, derating is required per the thermal characteristics table in the NXP datasheet. The PDTB123EK maintains stable performance up to its 150 °C junction temperature limit.

Does PDTB123EK require external base resistors for operation?

No, the PDTB123EK does not require external base resistors. It integrates R1 = 2.2 kΩ (base-to-input) and R2 = 2.2 kΩ (base-to-emitter) internally, forming a complete bias network. This enables direct connection of a logic signal to Pin 1 (input), with Pin 2 (emitter) grounded and Pin 3 (collector) driving the load-eliminating two passive components per channel and simplifying schematic capture and layout for the PDTB123EK.

What is the typical on-state input voltage (VI(on)) for PDTB123EK?

The typical VI(on) for PDTB123EK is −1.5 V at V_CE = −0.3 V and I_C = −20 mA, with a guaranteed range of −1.0 V to −2.0 V. This ensures reliable turn-on with standard 3.3 V and 5 V logic outputs, even under voltage droop or temperature variation. The PDTB123EK's defined VI(on) eliminates ambiguity in logic-level compatibility that occurs with discrete BJTs lacking integrated biasing.

Can PDTB123EK be used in automotive applications?

Yes, the PDTB123EK is qualified for automotive interior applications including lighting control and body electronics. Its −50 V V_CEO, 150 °C maximum junction temperature, and AEC-Q101 alignment (per NXP's broader RET family qualification) support operation in 12 V systems with load dump transients. The PDTB123EK is widely deployed in door modules and dashboard subassemblies where robustness and component reduction are key requirements.

What is the marking code for PDTB123EK on the package?

The marking code for PDTB123EK is "E2", laser-etched or molded onto the top surface of the SOT346 package. This 2-character code uniquely identifies the part within NXP's PDTB123E series and corresponds to the 12NC ordering code ending in -115 (e.g., 935689115115). The PDTB123EK marking is distinct from PDTB123ES ("B123ES") and PDTB123ET ("*7S"), ensuring traceability during assembly and field service.