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NXP Semiconductors PDTB123ES,126
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- Part No.:
- PDTB123ES,126
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
PDTB123ES,126.pdf
- Description:
- TRANS PREBIAS PNP 50V TO92-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,633
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Product details
Overview
PDTB123ES,126 from NXP Semiconductors is a PNP resistor-equipped transistor (RET) designed for digital switching in through-hole mounted automotive and industrial control circuits. It delivers −500 mA DC output current, features integrated bias resistors R1 = 2.2 kΩ and R2 = 2.2 kΩ with ±10 % ratio tolerance, and supports −50 V collector-emitter voltage - enabling direct interface with microcontroller GPIOs driving relays or LED arrays.
For engineers reviewing the PDTB123ES,126 datasheet, PDTB123ES,126 pinout, PDTB123ES,126 application, or PDTB123ES,126 equivalent, key selection criteria include its SOT54 through-hole package, guaranteed −0.3 V VCEsat at −50 mA/−2.5 mA drive, VI(on) range of −1.0 to −2.0 V, and built-in resistor network eliminating external base components in high-volume logic-level switching designs.
Technical Context
This device integrates two precision thin-film resistors (R1 and R2) directly into a PNP bipolar transistor die, forming a monolithic resistor-equipped transistor. Its internal R1–R2 network provides fixed base biasing, enabling single-resistor input drive and eliminating discrete base resistors in digital on/off applications.
The PDTB123ES,126 operates with open-base VCEO = −50 V and supports input voltage ranges from −12 V to +10 V. Its hFE ≥ 40 at −50 mA/−5 V ensures reliable saturation under standard logic-level drive, while thermal resistance Rth(j-a) = 250 K/W (SOT54) enables stable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - maximum safe collector-emitter voltage with base open; defines off-state blocking capability in relay or load-switching circuits |
| IO (DC) | −500 mA - continuous collector current rating; supports driving medium-power loads like solenoids or multi-LED strings |
| R1 | 2.2 kΩ (1.54–2.86 kΩ) - input bias resistor value; sets base current for predictable turn-on with standard 3.3 V/5 V logic |
| R2/R1 | 1.0 ±0.1 - matched resistor ratio ensuring stable bias point and consistent switching thresholds across temperature |
| VCEsat | ≤ −0.3 V at IC = −50 mA, IB = −2.5 mA - low saturation voltage minimizes power loss and heat generation in active switching |
| VI(on) | −1.0 to −2.0 V at VCE = −0.3 V, IC = −20 mA - guaranteed turn-on threshold compatible with TTL and CMOS logic outputs |
| Ptot | 500 mW at Tamb ≤ 25 °C - total power dissipation limit for SOT54 package; determines maximum sustained load current under ambient conditions |
Pinout & Package
The PDTB123ES,126 uses the SOT54 (JEDEC TO-92, JEITA SC-43A) through-hole plastic package with straight leads and standard footprint for manual or wave-solder assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connected internally to R1; accepts logic-level input signal to enable transistor conduction |
| 2 | output (collector) | High-current output node; sinks up to −500 mA from load to ground when active |
| 3 | GND (emitter) | Common reference terminal tied to system ground; completes current path for switched loads |
Key Features
| Feature | Design Value |
|---|---|
| Built-in bias resistors R1 and R2 | Eliminates need for two external base resistors, reducing BOM count and PCB area in digital switch designs |
| ±10 % R2/R1 tolerance | Ensures consistent switching behavior across production lots and temperature, critical for deterministic logic interfacing |
| −500 mA DC output current | Supports direct drive of industrial indicators, small relays, and LED banks without external amplification |
| −50 V VCEO rating | Enables use in 24 V automotive and industrial systems with margin against inductive kickback and supply transients |
| SOT54 through-hole package | Provides mechanical robustness and thermal reliability for wave-soldered assemblies in harsh environments |
Applications
| Automotive Body Control Module | Industrial PLC Output Stage |
|---|---|
|
Use Scenario: Switching 12 V indicator LEDs and small solenoids in door lock and lighting control units. IC Role / Device Role / Timing Role: Digital output driver translating MCU GPIO signals into load-current sinking paths. Use Value: Built-in R1/R2 eliminates discrete base resistors, reducing component count by 2 per channel and improving manufacturing yield. |
Use Scenario: Driving 24 V DC relay coils and status LEDs on modular I/O cards. IC Role / Device Role / Timing Role: High-reliability load switch providing galvanically isolated current sink per output channel. Use Value: −50 V VCEO and −500 mA IO rating ensure safe operation under 24 V nominal + transient overvoltage conditions. |
| Consumer Appliance Control Board | Medical Diagnostic Equipment Interface |
|
Use Scenario: Controlling buzzer activation, display backlighting, and motor enable lines in washing machines and HVAC controllers. IC Role / Device Role / Timing Role: Logic-level translator and current amplifier between low-power MCU and higher-power peripherals. Use Value: VI(on) range of −1.0 to −2.0 V guarantees compatibility with both 3.3 V and 5 V microcontrollers without level-shifting circuitry. |
Use Scenario: Isolating and conditioning digital control signals for sensor excitation and actuator enable in portable diagnostic tools. IC Role / Device Role / Timing Role: Safe, low-leakage switching element for infrequent but mission-critical enable/disable functions. Use Value: ICEO ≤ −0.5 μA at VCE = −50 V ensures negligible standby current draw, preserving battery life in handheld devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP digital switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC807-40,115 | Discrete PNP BJT without integrated resistors; requires external base bias network | Higher design flexibility but increases component count and layout complexity | Select when adjustable gain or custom biasing is required; not drop-in compatible with PDTB123ES,126 |
| PDTB123EK,115 | Surface-mount SOT346 variant of same RET family; identical electrical specs but different package | Used in automated SMT assembly; incompatible with through-hole layouts | Select for space-constrained PCBs requiring reflow soldering; same functional behavior but different mounting method |
Compared with BC807-40,115 and PDTB123EK,115, the PDTB123ES,126 uniquely combines through-hole mechanical robustness, integrated biasing, and −500 mA current capability - making it optimal for cost-sensitive, high-volume industrial control boards where manual or wave-solder assembly is preferred.
Availability
PDTB123ES,126 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output modules, and consumer appliance control boards requiring stable component supply and long-term manufacturability.
Supply support for PDTB123ES,126 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PDTB123E series belongs to NXP's resistor-equipped transistor product line, engineered specifically to replace discrete BJT + resistor combinations in cost-driven digital switching applications across automotive and industrial markets.
FAQ
What is the package type of PDTB123ES,126?
The PDTB123ES,126 uses the SOT54 package (JEDEC TO-92, JEITA SC-43A), a plastic through-hole package with three straight leads. It is designed for wave-soldering and manual assembly, offering mechanical stability and thermal performance suitable for industrial environments. The SOT54 footprint is standardized and widely supported in legacy and new PCB designs requiring robust leaded components.
Does PDTB123ES,126 require external base resistors?
No, the PDTB123ES,126 does not require external base resistors because it integrates R1 = 2.2 kΩ and R2 = 2.2 kΩ internally. This resistor-equipped transistor architecture allows direct connection of logic-level input signals (e.g., from a microcontroller GPIO) to Pin 1, simplifying circuit design and reducing bill-of-materials count. The fixed R2/R1 ratio of 1.0 ±0.1 ensures consistent biasing behavior.
What is the maximum collector-emitter voltage rating for PDTB123ES,126?
The maximum collector-emitter voltage (VCEO) for PDTB123ES,126 is −50 V under open-base conditions. This rating is confirmed in Table 2 (Quick reference data) and Table 6 (Limiting values) of the official NXP datasheet. It defines the device's off-state blocking capability and supports reliable operation in 24 V industrial and 12 V automotive systems with transient margin.
Can PDTB123ES,126 be used as a direct replacement for BC807 series transistors?
The PDTB123ES,126 is positioned by NXP as a cost-saving alternative to the BC807 series in digital switching applications, but it is not a pin-to-pin or functional drop-in replacement. Unlike the BC807, the PDTB123ES,126 includes integrated bias resistors and has different pin assignments (SOT54: Pin 1 = base input, Pin 2 = collector, Pin 3 = emitter). Circuit redesign is required to accommodate its built-in resistor network and pinout.
What is the typical saturation voltage of PDTB123ES,126 at rated current?
The typical collector-emitter saturation voltage (VCEsat) of PDTB123ES,126 is ≤ −0.3 V at IC = −50 mA and IB = −2.5 mA, as specified in Table 8 (Characteristics) of the NXP datasheet. This low saturation voltage minimizes power dissipation (P = V × I) during active switching, reducing thermal stress and enabling efficient operation in high-duty-cycle digital load control applications.
PDTB123ES,126 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- -
- Power - Max:
- 500 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
PDTB123ES,126 FAQ
1.How can I place an order for PDTB123ES,126 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTB123ES,126 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTB123ES,126 reliable?
The price and inventory of PDTB123ES,126 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTB123ES,126 is usually 5 days.
3.What payment methods are accepted for PDTB123ES,126?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTB123ES,126 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTB123ES,126?
PDTB123ES,126 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTB123ES,126 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTB123ES,126?
For technical support, including PDTB123ES,126 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTB123ES,126 requirements.
6.How does Aetrix verify that PDTB123ES,126 is sourced from the original manufacturer or authorized distributors?
All PDTB123ES,126 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTB123ES,126 meets industry standards.
7.What is the process for return or replacement of PDTB123ES,126?
All PDTB123ES,126 units undergo pre-shipment inspection (PSI). If there is an issue with PDTB123ES,126, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTB123ES,126 part is unused and in its original packaging.
Return procedure for PDTB123ES,126:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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