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NXP Semiconductors PDTC114TE,115
- Part No.:
- PDTC114TE,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-75, SOT-416
- Datasheet:
-
PDTC114TE,115.pdf
- Description:
- TRANS PREBIAS NPN 50V 0.1A SC75
- Quantity:
- Payment:
- Shipping:
Inventory:3,771
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Product details
Overview
PDTC114TE,115 from Nexperia is an NPN resistor-equipped transistor (RET) with integrated 10 kΩ input bias resistor (R1), open R2 configuration, 50 V VCEO, 100 mA output current capability, and SOT416 (SC-75) package - designed for digital switching in space-constrained logic interface circuits.
For engineers reviewing the PDTC114TE,115 datasheet, PDTC114TE,115 pinout, PDTC114TE,115 application, or PDTC114TE,115 equivalent, this device serves as a compact, component-count-reducing alternative to discrete BJT + resistor combinations in microcontroller I/O buffering, LED driving, and low-power load switching.
Technical Context
The PDTC114TE,115 integrates a single NPN silicon transistor with a monolithically fabricated 10 kΩ base-input resistor (R1) and no internal emitter-base feedback resistor (R2 = open), enabling direct TTL/CMOS-level drive without external bias components. Its simplified three-terminal structure supports unidirectional current flow from collector to emitter under base-controlled saturation.
This RET operates as a saturated switch with guaranteed VCE(sat) ≤ 150 mV at IC = 10 mA / IB = 0.5 mA, hFE ≥ 200 at IC = 1 mA, and exhibits low leakage (ICEO ≤ 1 µA at VCE = 30 V), making it suitable for low-duty-cycle digital control where predictable turn-on threshold and minimal quiescent power are required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V and lower logic-supplied systems. |
| IO | 100 mA - Continuous DC output current rating; sufficient for driving LEDs, small relays, or logic inputs. |
| R1 | 10 kΩ (7–13 kΩ range) - Integrated base-input resistor sets standard TTL-compatible input impedance; eliminates external bias resistor. |
| VCE(sat) | ≤ 150 mV at IC = 10 mA / IB = 0.5 mA - Low saturation voltage minimizes power loss and heat generation during switching. |
| hFE | ≥ 200 at VCE = 5 V, IC = 1 mA - High DC current gain ensures reliable saturation with minimal base drive current. |
| Ptot | 150 mW at Tamb ≤ 25 °C - Power dissipation limit defines thermal derating envelope for PCB layout in SOT416 footprint. |
Pinout & Package
SOT416 (SC-75) surface-mount plastic package: 1.75 mm × 0.95 mm × 0.7 mm body, 3-lead single-row outline with gull-wing leads; optimized for high-density automated assembly and reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connected internally to R1; accepts logic-level drive (e.g., 3.3 V or 5 V MCU GPIO); no external resistor needed. |
| 2 | GND (emitter) | Emitter tied to system ground; provides reference node for input and output paths; common return for switched load. |
| 3 | output (collector) | Switched high-side output node; connects to load (e.g., LED anode or relay coil); sinks current when active. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated R1 = 10 kΩ | Eliminates one external resistor per switch channel, reducing BOM count and PCB area in multi-channel interfaces. |
| R2 = open | Enables direct logic-level drive without emitter feedback; simplifies design for non-inverting buffer or low-side switch configurations. |
| 100 mA IO rating | Supports driving multiple standard LEDs (20 mA each) or small solenoids without external amplification. |
| VCE(sat) ≤ 150 mV | Reduces conduction loss to <1.5 mW at 10 mA, minimizing self-heating and enabling higher duty cycles in thermally constrained layouts. |
| SOT416 package | 0.65 mm pitch, ultra-small footprint (1.75 × 0.95 mm) - ideal for wearables, IoT sensors, and miniaturized consumer electronics. |
Applications
| Microcontroller I/O Buffering | LED Indicator Driving |
|---|---|
|
Use Scenario: Interfacing a 3.3 V ARM Cortex-M0 GPIO to a 5 V logic rail or higher-voltage peripheral. IC Role / Device Role / Timing Role: Level-shifting digital switch that isolates MCU pins from voltage mismatch while providing current gain. Use Value: Prevents GPIO overvoltage stress and enables safe bidirectional signal translation using a single passive component. |
Use Scenario: Driving multiple status LEDs from a battery-powered sensor node with limited PCB real estate. IC Role / Device Role / Timing Role: Constant-current sink switch controlling LED on/off state via MCU PWM or digital output. Use Value: Reduces total component count by 33% vs. discrete BJT + resistor, lowering assembly cost and improving reliability. |
| Low-Power Relay Control | Logic-Level Load Switching |
|
Use Scenario: Activating a 5 V, 40 mA coil relay from an ESP32 development board operating at 3.3 V. IC Role / Device Role / Timing Role: Saturated NPN switch providing galvanic isolation between MCU and relay coil. Use Value: Guarantees full relay actuation with <0.5 mA base drive, eliminating need for Darlington or MOSFET alternatives. |
Use Scenario: Enabling/disabling a 3.3 V sensor module powered from a shared LDO rail in a portable medical device. IC Role / Device Role / Timing Role: High-side enable switch controlled by system controller to manage power sequencing. Use Value: Provides clean power gating with <150 mV dropout, avoiding brown-out risk during startup of downstream circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC114TK,115 | SOT346 (SC-59A) package; 250 mW Ptot; identical R1, VCEO, and IO specs. | Larger footprint (3.0 × 1.7 mm) but higher power handling; better thermal performance in moderate-load scenarios. | Select when board layout allows larger package and >150 mW dissipation is needed. |
| BC847B,215 | Standard NPN BJT (no built-in resistors); requires external 10 kΩ base resistor; same SOT23 package option. | Greater design flexibility (adjustable bias), but increases component count and layout complexity. | Select when precise hFE tuning or variable base drive is required across operating temperature. |
Compared with PDTC114TK,115, the PDTC114TE,115 offers 35% smaller PCB area but 40% lower power dissipation; compared with BC847B,215, it reduces bill-of-materials by one resistor per channel while maintaining identical switching functionality in fixed-ratio digital interfaces.
Availability
PDTC114TE,115 is available at Aetrix Electronics and suitable for microcontroller interfacing, LED driving, relay control, and logic-level load switching requiring stable component supply and long-term industrial availability.
Supply support for PDTC114TE,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices for automotive, industrial, mobile, and computing markets.
The PDTC114TE,115 belongs to Nexperia's resistor-equipped transistor (RET) family, engineered specifically to simplify digital interface design by integrating bias resistors into standard BJT structures for space- and cost-sensitive applications.
FAQ
What is the maximum collector-emitter voltage rating for PDTC114TE,115?
The PDTC114TE,115 has a maximum collector-emitter voltage (VCEO) rating of 50 V under open-base conditions. This specification is confirmed in Table 2 (Quick reference data) and Table 6 (Limiting values) of the official Nexperia datasheet Rev. 08 - 9 February 2006. Exceeding this voltage risks permanent breakdown of the internal NPN junction.
Does PDTC114TE,115 include both R1 and R2 bias resistors?
No, the PDTC114TE,115 includes only R1 = 10 kΩ (with tolerance 7–13 kΩ) and has R2 = open, as explicitly stated in the product overview and Section 1.1 of the datasheet. This configuration supports direct logic-level drive without emitter feedback, distinguishing it from dual-resistor RET variants like PDTC124 series.
What is the thermal resistance from junction to ambient for PDTC114TE,115?
The PDTC114TE,115 has a thermal resistance from junction to ambient (Rth(j-a)) of 833 K/W when mounted on an FR4 PCB with single-sided copper and standard footprint, per Table 7 of the datasheet. This value reflects its SOT416 package's limited heat-spreading capability and necessitates conservative power derating above 25 °C ambient.
Can PDTC114TE,115 be used as a direct replacement for BC847B in digital switching circuits?
Yes, the PDTC114TE,115 serves as a cost-saving alternative to BC847B in digital applications, as noted in Section 1.2 of the datasheet. It replicates BC847B's switching function while integrating the required 10 kΩ base resistor - eliminating one external component and reducing PCB area, though pinout differs (SOT416 vs. SOT23).
What is the marking code for PDTC114TE,115 on the physical device?
The marking code for PDTC114TE,115 is "24", as specified in Table 5 (Marking codes) of the datasheet. This two-character top-side laser marking appears on the SOT416 package body and is used for visual identification and traceability during assembly and inspection.
PDTC114TE,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 10 kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- Frequency - Transition:
- -
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
PDTC114TE,115 FAQ
1.How can I place an order for PDTC114TE,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTC114TE,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTC114TE,115 reliable?
The price and inventory of PDTC114TE,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC114TE,115 is usually 5 days.
3.What payment methods are accepted for PDTC114TE,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC114TE,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTC114TE,115?
PDTC114TE,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTC114TE,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTC114TE,115?
For technical support, including PDTC114TE,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC114TE,115 requirements.
6.How does Aetrix verify that PDTC114TE,115 is sourced from the original manufacturer or authorized distributors?
All PDTC114TE,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC114TE,115 meets industry standards.
7.What is the process for return or replacement of PDTC114TE,115?
All PDTC114TE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC114TE,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTC114TE,115 part is unused and in its original packaging.
Return procedure for PDTC114TE,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTC114TE,115 Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
Rohm Semiconductor
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DDTD113ZC-7-F
Diodes Incorporated
-
DRDNB16W-7
Diodes Incorporated
-
PDTC114ET,215
Nexperia USA Inc.
-
PDTC143ZT,215
Nexperia USA Inc.
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PDTC143ET,215
Nexperia USA Inc.
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PDTC143XT,215
Nexperia USA Inc.
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MMUN2211LT1G
onsemi
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PDTC144ET,215
Nexperia USA Inc.
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PDTC124ET,215
Nexperia USA Inc.
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