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NXP Semiconductors PDTC115EMB,315
- Part No.:
- PDTC115EMB,315
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-101, SOT-883
- Datasheet:
-
PDTC115EMB,315.pdf
- Description:
- TRANS PREBIAS NPN 50V 0.02A 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:180,000
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Product details
Overview
PDTC115EMB from Nexperia is an NPN resistor-equipped transistor (RET) in a leadless DFN1006B-3 (SOT883B) package, designed for digital switching in space-constrained applications. It integrates 100 kΩ input and feedback bias resistors (R1 = R2 = 100 kΩ), supports 20 mA output current, features 50 V VCEO, and is AEC-Q101 qualified for automotive use - commonly deployed in mobile peripheral drivers and IC input control circuits.
For engineers reviewing the PDTC115EMB datasheet, PDTC115EMB pinout, PDTC115EMB application, or PDTC115EMB equivalent, key selection considerations include its ultra-small 1.0 × 0.6 × 0.37 mm footprint, built-in resistor ratio (R2/R1 = 1.0 typ), low 150 mV VCEsat at 5 mA/0.25 mA drive, and qualification for automotive-grade reliability under thermal cycling and humidity stress.
Technical Context
This RET implements a monolithic NPN transistor with two integrated precision bias resistors - R1 connected between base and input, R2 between base and emitter - enabling single-resistor external drive and eliminating discrete bias networks. Its internal topology simplifies level-shifting and logic interfacing while maintaining predictable turn-on/off thresholds across temperature.
The device operates as a saturated switch with guaranteed hFE ≥ 80 at IC = 5 mA and VCE = 5 V, and exhibits VI(on) = 1.5–3.0 V and VI(off) = 0.5–1.1 V, making it compatible with 1.8 V, 3.3 V, and 5 V CMOS/TTL logic families without additional interface components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum allowable collector-emitter voltage before breakdown; enables use in 24 V automotive signal chains and 3.3/5 V logic-level systems with margin. |
| IO | 20 mA - Continuous DC output current capability; sufficient for driving LEDs, small relays, or logic inputs without external amplification. |
| R1 | 100 kΩ (70–130 kΩ) - Input bias resistor value; sets base current for defined saturation when driven from high-impedance sources like microcontroller GPIOs. |
| R2/R1 | 1.0 (0.8–1.2) - Matched resistor ratio ensuring stable bias point and consistent switching threshold across process variation and temperature. |
| VCEsat | 150 mV max at IC = 5 mA, IB = 0.25 mA - Low saturation voltage minimizes power loss and self-heating in battery-powered portable devices. |
| fT | 230 MHz - Transition frequency indicating usable bandwidth up to ~10–20 MHz for fast digital switching or pulse applications. |
| AEC-Q101 | Qualified - Meets automotive stress test requirements including HTOL, TC, HAST, and ESD (HBM ≥ 2 kV), supporting deployment in infotainment and body electronics. |
Pinout & Package
PDTC115EMB uses the DFN1006B-3 (SOT883B) leadless plastic package: 1.0 mm × 0.6 mm × 0.37 mm body height, three solderable terminals on bottom, no leads, requiring reflow-compatible PCB footprint per Fig 11 in the datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Input (base) | Connected to R1; accepts logic-level drive signal; internal node shared with R1 and R2 junction. |
| 2 | GND (emitter) | Emitter terminal tied to system ground; serves as common reference for both bias resistors and output current path. |
| 3 | Output (collector) | Switched output node; sinks current to ground when active; connects to load (e.g., LED cathode or gate pull-down). |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | Eliminates need for two external resistors, reducing BOM count by 2 parts and saving >0.5 mm² PCB area in dense layouts. |
| Ultra-low profile | 0.37 mm max height enables use in ultra-thin mobile modules and wearable sensors where Z-height is constrained. |
| Automotive qualification | AEC-Q101 compliance ensures reliability over -40 °C to +150 °C ambient, supporting under-hood and dashboard-mounted ECUs. |
| Logic-compatible VI(on)/VI(off) | On-threshold (1.5–3.0 V) and off-threshold (0.5–1.1 V) align with standard CMOS voltage levels, enabling direct MCU GPIO interfacing. |
| Thermal resistance | Rth(j-a) = 500 K/W - Enables 250 mW power dissipation at Tamb ≤ 25 °C; derates linearly above 25 °C per Fig 2. |
Applications
| Automotive Body Control Module | Smartphone Peripheral Driver |
|---|---|
Use Scenario: Driving LED status indicators and small solenoid actuators in door modules and lighting controllers. IC Role / Device Role / Timing Role: NPN switch providing low-side current sink for 5–20 mA loads, controlled by 3.3 V microcontroller outputs. Use Value: Reduces component count vs. discrete BJT + two resistors; AEC-Q101 rating avoids separate qualification effort for automotive Tier 1 suppliers. |
Use Scenario: Enabling/disabling camera flash LEDs or vibration motor drivers in compact smartphone mainboards. IC Role / Device Role / Timing Role: Logic-level-controlled current switch with fast turn-on (ton < 10 ns typical) and minimal board space consumption. Use Value: 1.0 × 0.6 mm footprint saves critical routing space near SoC; 0.37 mm height avoids interference with stacked memory or RF shields. |
| Industrial Sensor Interface | IoT Edge Node Signal Conditioning |
Use Scenario: Level-shifting and buffering digital signals from analog sensor outputs to microcontroller GPIOs in factory-floor sensors. IC Role / Device Role / Timing Role: Digital buffer isolating sensitive ADC inputs from noisy digital lines; configured as emitter-follower or common-emitter switch. Use Value: Built-in resistor matching ensures consistent VI(on)/VI(off) across batches, improving production yield in calibrated sensor assemblies. |
Use Scenario: Controlling power to BLE/Wi-Fi modules or environmental sensors during sleep/wake cycles in battery-operated edge nodes. IC Role / Device Role / Timing Role: Low-quiescent-current enable switch; draws <100 nA leakage (ICBO) when off, extending battery life. Use Value: 1 µA ICEO at 30 V ensures negligible standby drain; AEC-Q101 robustness adds margin for industrial temperature cycling (−40 °C to +85 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC124EMB | R1 = 220 kΩ, R2 = 47 kΩ → higher input impedance, lower base current, reduced gain sensitivity to β variation. | Better suited for weak-drive sources (e.g., open-drain I²C lines); lower IO capability (~10 mA) limits load drive strength. | Select when driving high-impedance inputs or minimizing MCU GPIO loading; not drop-in for 20 mA loads. |
| PDTA115EMB | PNP complement with identical R1/R2 values (100 kΩ each), same package and AEC-Q101 rating. | Used for high-side switching or complementary logic stages; requires inverted control signal polarity. | Choose for dual-NPN/PNP designs or when sourcing current (e.g., LED anode drive) is required alongside PDTC115EMB's sinking capability. |
Compared with PDTC124EMB and PDTA115EMB, PDTC115EMB offers balanced 100 kΩ biasing ideal for general-purpose 3.3 V logic interfacing, higher output current than PDTC124EMB, and complementary functionality to PDTA115EMB - enabling matched-pair design in push-pull or dual-rail configurations.
Availability
PDTC115EMB is available at Aetrix Electronics and suitable for automotive body electronics, smartphone peripheral control, industrial sensor interfaces, and IoT edge node power management requiring stable component supply and long-term lifecycle support.
Supply support for PDTC115EMB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, computing, and consumer markets.
PDTC115EMB belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to replace legacy BJT + resistor combinations in digital switching applications - prioritizing miniaturization, assembly efficiency, and automotive-grade reliability.
FAQ
Is PDTC115EMB pin-compatible with other SOT883B-packaged RETs?
Yes - all Nexperia RETs in SOT883B (DFN1006B-3) share identical 3-pin mechanical layout and solder land pattern per Fig 11 of the datasheet. Pin 1 is always input, Pin 2 emitter/GND, Pin 3 collector/output. However, internal resistor values differ across part numbers, so electrical compatibility must be verified per application.
What is the maximum operating temperature for continuous use?
The PDTC115EMB has a maximum junction temperature (Tj) of 150 °C and specified ambient operating range of −65 °C to +150 °C. At 25 °C ambient, it can dissipate up to 250 mW; derating follows the curve in Fig 2, reaching zero dissipation at ~150 °C ambient due to Rth(j-a) = 500 K/W.
Does PDTC115EMB require external decoupling or protection components?
No external decoupling or protection is required for standard digital switching. Its built-in resistors provide inherent current limiting, and VEBO = 10 V and VCEO = 50 V offer margin against typical logic rail transients. For inductive loads, a flyback diode remains necessary - the RET itself does not integrate suppression.
How does the R2/R1 ratio affect switching behavior?
The R2/R1 ratio of 1.0 ±0.2 ensures stable base biasing: it fixes the base-emitter voltage (VBE) relative to input voltage, making turn-on threshold less sensitive to transistor hFE variation. This improves batch-to-batch consistency in saturation voltage and propagation delay across temperature and manufacturing lots.
PDTC115EMB,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-101, SOT-883
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 20 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 100 kOhms
- Resistor - Emitter Base (R2):
- 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 230 MHz
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1006B-3
PDTC115EMB,315 FAQ
1.How can I place an order for PDTC115EMB,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTC115EMB,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTC115EMB,315 reliable?
The price and inventory of PDTC115EMB,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC115EMB,315 is usually 5 days.
3.What payment methods are accepted for PDTC115EMB,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC115EMB,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTC115EMB,315?
PDTC115EMB,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTC115EMB,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTC115EMB,315?
For technical support, including PDTC115EMB,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC115EMB,315 requirements.
6.How does Aetrix verify that PDTC115EMB,315 is sourced from the original manufacturer or authorized distributors?
All PDTC115EMB,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC115EMB,315 meets industry standards.
7.What is the process for return or replacement of PDTC115EMB,315?
All PDTC115EMB,315 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC115EMB,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTC115EMB,315 part is unused and in its original packaging.
Return procedure for PDTC115EMB,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTC115EMB,315 Tags
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