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Nexperia USA Inc. PDTC115ET,215
- Part No.:
- PDTC115ET,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PDTC115ET,215.pdf
- Description:
- TRANS PREBIAS NPN 50V TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:25
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Product details
Overview
PDTC115ET from NXP Semiconductors is an NPN resistor-equipped transistor (RET) with integrated 100 kΩ base bias resistors (R1 and R2), designed for simplified digital switching in low-power interface circuits. It supports DC output current up to 20 mA, collector-emitter voltage up to 50 V, and operates within −65 °C to +150 °C ambient temperature - commonly used in logic-level signal translation and microcontroller I/O buffering.
For engineers reviewing the PDTC115ET datasheet, PDTC115ET pinout, PDTC115ET application, or PDTC115ET equivalent, this page delivers verified package mapping (SOT23), confirmed pin configuration (1=base, 2=emitter, 3=collector), thermal resistance (500 K/W), saturation voltage (≤150 mV at IC = 5 mA), and direct alternatives with documented bias resistor matching.
Technical Context
This RET integrates two precision 100 kΩ resistors (R1 between base and input, R2 between base and emitter) to eliminate external bias components and ensure predictable turn-on/turn-off behavior under TTL- or CMOS-compatible drive conditions. Its fixed resistor ratio (R2/R1 = 1.0 ± 0.2) stabilizes DC current gain across temperature.
The device functions as a single-stage digital switch with guaranteed Vi(on) ≤ 1.5 V and Vi(off) ≥ 1.1 V at specified test conditions, enabling reliable operation with 3.3 V and 5 V logic families without level-shifting circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before breakdown; supports rail-to-rail switching in 24 V industrial control inputs. |
| IO (DC) | 20 mA - Continuous output current capability; sufficient for driving LEDs, small relays, or logic gate inputs. |
| R1 / R2 | 100 kΩ each - Matched internal bias resistors reduce BOM count and eliminate manual resistor selection and placement. |
| VCE(sat) | ≤150 mV at IC = 5 mA - Low saturation voltage minimizes power loss and heat generation in high-duty-cycle switching. |
| hFE | ≥80 at VCE = 5 V, IC = 5 mA - Stable DC current gain ensures consistent switching margin across production lots. |
| Ptot | 250 mW at Tamb ≤ 25 °C - Power dissipation limit compatible with standard SOT23 PCB layout without heatsinking. |
| Rth(j-a) | 500 K/W - Thermal resistance defines junction-to-ambient temperature rise per watt; informs derating above 25 °C ambient. |
Pinout & Package
PDTC115ET uses the SOT23 surface-mount plastic package (TO-236AB), measuring 1.1 × 0.9 × 1.0 mm, with gull-wing leads optimized for reflow soldering only. The package is RoHS-compliant and rated for operating ambient temperatures from −65 °C to +150 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base (with internal R1–R2 network) | Input node connected to both bias resistors; accepts logic-level signals directly without external pull-up/down. |
| 2 | Emitter | Common return path for output current; internally tied to R2; must be connected to system ground or reference potential. |
| 3 | Collector | Switched output node; sinks load current when biased on; rated for 50 V and 20 mA continuous DC operation. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in R1 and R2 bias resistors | 100 kΩ ±30% each, ratio 0.8–1.2 - eliminates 2 external resistors and associated layout area and assembly steps. |
| Guaranteed Vi(on) and Vi(off) | Vi(on) ≤ 1.5 V, Vi(off) ≥ 1.1 V - enables robust logic-level interfacing with 3.3 V and 5 V MCUs without ambiguity at threshold. |
| Low VCE(sat) | ≤150 mV at IC = 5 mA - reduces conduction loss by >70% vs. discrete BJT + resistor solutions at same current. |
| Thermal performance | Rth(j-a) = 500 K/W - allows full 20 mA operation up to ~75 °C ambient before derating required. |
| Qualified for reflow only | No hand-soldering or wave-soldering support - ensures mechanical reliability and avoids lead damage during assembly. |
Applications
| Microcontroller I/O Buffering | LED Indicator Driver |
|---|---|
|
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V GPIO pins with limited sink/source capability. IC Role / Device Role: NPN switch configured in common-emitter mode, sinking current from LED anode to ground. Use Value: Eliminates need for external base resistor; guarantees turn-on with 3.3 V logic while maintaining <150 mV drop for brightness consistency. |
Use Scenario: Level-shifting 5 V logic signals to 3.3 V MCU inputs using open-collector configuration. IC Role / Device Role: Active-low inverter with pull-up on collector; provides clean digital transition and noise immunity. Use Value: Built-in R1/R2 ensures stable high/low thresholds without external components, reducing board space by 20 mm² per channel. |
| Industrial Sensor Interface | Power Supply Enable Control |
|
Use Scenario: Interfacing NAMUR-compliant 4–20 mA sensor outputs to PLC digital inputs. IC Role / Device Role: Current-switching interface that converts sensor loop state into clean TTL-level signal. Use Value: 50 V VCEO rating withstands transient surges on field wiring; 20 mA IO supports direct connection to optocoupler LEDs. |
Use Scenario: Enabling/disabling auxiliary 12 V rails via microcontroller command in embedded power management. IC Role / Device Role: Low-side enable switch controlling PMOS gate driver or regulator EN pin. Use Value: 250 mW Ptot and 500 K/W thermal resistance allow sustained 20 mA switching at 70 °C ambient without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC114ET,215 | R1 = 100 kΩ, R2 = 10 kΩ (ratio = 0.1); lower input impedance and higher gain sensitivity | Better suited for weak-drive sources (e.g., high-Z op-amp outputs) but less noise-immune than PDTC115ET | Select when input signal source has limited drive strength but requires tighter Vi(on) control. |
| EMD115T1G | Onsemi part; R1 = R2 = 100 kΩ, but VCEO = 40 V and Ptot = 200 mW (SOT-23) | Lower voltage and power ratings restrict use in 24 V systems or continuous 20 mA loads above 60 °C | Acceptable for cost-sensitive 3.3 V/5 V consumer designs where 40 V margin and 200 mW dissipation are sufficient. |
Compared with PDTC115ET, PDTC114ET offers higher gain at low drive but reduced noise margin, while EMD115T1G trades 10 V VCEO headroom and 50 mW power margin for multi-source availability - critical for long-lifecycle industrial programs requiring ≥50 V surge tolerance.
Availability
PDTC115ET is available at Aetrix Electronics and suitable for microcontroller I/O buffering, LED indicator driving, and industrial sensor interface applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for PDTC115ET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
PDTC115ET belongs to the PDTC115E series of resistor-equipped transistors, engineered specifically to reduce component count and improve reliability in digital interface and low-power switching applications.
FAQ
What is the pin configuration of PDTC115ET?
PDTC115ET uses the SOT23 package with pin 1 = base (internal R1–R2 node), pin 2 = emitter, and pin 3 = collector. This configuration is confirmed in NXP's official datasheet Figure 1 (Simplified outline and symbol) and matches SOT23 standard pinning for NPN RETs.
Can PDTC115ET replace a discrete BJT + two resistors?
Yes - PDTC115ET directly replaces an NPN transistor plus two 100 kΩ resistors (one from base to input, one from base to emitter). Its integrated R1/R2 network maintains identical biasing behavior while reducing PCB area, assembly steps, and BOM line items.
Is PDTC115ET suitable for 3.3 V logic interfacing?
Yes - its Vi(on) ≤ 1.5 V and Vi(off) ≥ 1.1 V guarantee reliable switching with 3.3 V CMOS/TTL outputs. The 100 kΩ input impedance also prevents excessive loading on low-drive GPIOs, unlike bare BJTs requiring smaller base resistors.
What is the maximum ambient temperature for full-rated 20 mA operation?
At 25 °C ambient, PDTC115ET delivers full 20 mA with 250 mW dissipation. With Rth(j-a) = 500 K/W, junction temperature rises 12.5 °C at 25 mW. Full 20 mA operation remains valid up to ~75 °C ambient before thermal derating applies per NXP's Ptot curve.
PDTC115ET,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 20 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 100 kOhms
- Resistor - Emitter Base (R2):
- 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PDTC115ET,215 FAQ
1.How can I place an order for PDTC115ET,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTC115ET,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTC115ET,215 reliable?
The price and inventory of PDTC115ET,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC115ET,215 is usually 5 days.
3.What payment methods are accepted for PDTC115ET,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC115ET,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTC115ET,215?
PDTC115ET,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTC115ET,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTC115ET,215?
For technical support, including PDTC115ET,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC115ET,215 requirements.
6.How does Aetrix verify that PDTC115ET,215 is sourced from the original manufacturer or authorized distributors?
All PDTC115ET,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC115ET,215 meets industry standards.
7.What is the process for return or replacement of PDTC115ET,215?
All PDTC115ET,215 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC115ET,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTC115ET,215 part is unused and in its original packaging.
Return procedure for PDTC115ET,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTC115ET,215 Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
Rohm Semiconductor
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DDTD113ZC-7-F
Diodes Incorporated
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DRDNB16W-7
Diodes Incorporated
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PDTC114ET,215
Nexperia USA Inc.
-
PDTC143ZT,215
Nexperia USA Inc.
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PDTC143ET,215
Nexperia USA Inc.
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PDTC143XT,215
Nexperia USA Inc.
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MMUN2211LT1G
onsemi
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PDTC144ET,215
Nexperia USA Inc.
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PDTC124ET,215
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