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NXP Semiconductors PDTC123EE,115
- Part No.:
- PDTC123EE,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-75, SOT-416
- Datasheet:
-
PDTC123EE,115.pdf
- Description:
- TRANS PREBIAS NPN 50V 0.1A SC75
- Quantity:
- Payment:
- Shipping:
Inventory:2,682
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Product details
Overview
PDTC123EE from NXP Semiconductors is an NPN resistor-equipped transistor with integrated bias resistors R1 = 2.2 kΩ and R2 = 2.2 kΩ, rated for VCEO = 50 V and IO = 100 mA DC, used in compact interface and switching circuits on PCBs with space-constrained SOT416 (SC-75) packaging.
For engineers reviewing the PDTC123EE datasheet, PDTC123EE pinout, PDTC123EE application, or PDTC123EE equivalent, this page delivers verified electrical parameters, confirmed SOT416 pin configuration, real-world switching use cases, and two validated alternative parts for design continuity and sourcing flexibility.
Technical Context
The PDTC123EE integrates two precision 2.2 kΩ bias resistors to form a monolithic NPN digital transistor, eliminating external base resistors and reducing layout complexity. Its internal resistor ratio (R1/R2 = 1.0 ±0.2) ensures stable saturation behavior under varying drive conditions.
Designed for DC switching at ambient temperatures up to +150 °C, it delivers VCEsat ≤ 150 mV at IC = 10 mA / IB = 0.5 mA and supports input voltage ranges from −10 V to +12 V, enabling robust interfacing with TTL and CMOS logic families.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V maximum - defines safe collector-emitter blocking voltage in open-base switching applications |
| IO (DC) | 100 mA maximum - sets upper limit for continuous load current in driver or logic-level interface roles |
| R1, R2 | 2.2 kΩ each (±30%) - enables direct connection to 3.3 V/5 V logic without external biasing components |
| VCEsat | ≤150 mV at IC=10 mA/IB=0.5 mA - ensures low conduction loss and minimal self-heating in active switching |
| Ptot | 150 mW at Tamb ≤ 25 °C (SOT416) - constrains thermal design margin for surface-mount placement on standard FR4 |
| hFE | ≥30 at VCE=5 V, IC=20 mA - guarantees sufficient current gain for reliable digital on/off operation |
| Vi(on) | 1.6 V typical - confirms turn-on compatibility with low-voltage logic outputs including 1.8 V and 3.3 V systems |
Pinout & Package
PDTC123EE is housed in a plastic surface-mounted SOT416 (SC-75) package measuring 1.7 × 1.4 × 0.9 mm, optimized for high-density PCB layouts and reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base (via internal R1–R2 network) | Input node connected through built-in 2.2 kΩ pull-up and 2.2 kΩ base-emitter resistor - accepts direct logic drive |
| 2 | Collector | Main output current path; connects to load supply rail or switched node requiring controlled current sinking |
| 3 | Emitter | Common return path tied to ground or low-side reference; completes current loop with collector and internal resistors |
Key Features
| Feature | Design Value |
|---|---|
| Integrated dual-bias resistor network | Eliminates two external 2.2 kΩ resistors, reducing BOM count and PCB footprint by ≥3 mm² |
| Guaranteed R1/R2 ratio | 0.8–1.2 tolerance ensures predictable saturation characteristics across temperature and process variation |
| Low VCEsat | ≤150 mV enables efficient power switching with <15 mW conduction loss at 100 mA load |
| Wide input voltage range | −10 V to +12 V supports bidirectional level translation and noise-immune logic interfacing |
| SOT416 thermal resistance | Rth(j-a) = 833 K/W in free air - informs derating curves for ambient temperatures >50 °C |
Applications
| Logic-Level Interface Driver | Microcontroller GPIO Expander |
|---|---|
|
Use Scenario: Driving LED indicators or small relays from 3.3 V microcontroller GPIO pins with limited sink/source capability. IC Role / Device Role / Timing Role: NPN switch configured as low-side driver, translating MCU logic states into higher-current loads. Use Value: Built-in 2.2 kΩ resistors eliminate need for discrete base biasing, saving board area and assembly cost while ensuring reliable turn-on at 3.3 V. |
Use Scenario: Adding extra digital output channels to resource-constrained MCUs like ARM Cortex-M0+ or PIC16F series. IC Role / Device Role / Timing Role: Digital transistor providing additional sink-capable I/O points without external passive components. Use Value: Enables direct connection to MCU pins-no external resistors required-reducing component count and improving signal integrity in dense layouts. |
| Level Translation Circuit | Compact Inverter Stage |
|
Use Scenario: Converting 1.8 V or 2.5 V logic signals to 5 V-compatible levels for legacy peripherals or display drivers. IC Role / Device Role / Timing Role: Active pull-down stage referenced to 5 V supply, inverting and shifting logic thresholds. Use Value: Vi(on) = 1.6 V typical and Vi(off) = 0.5 V ensure clean switching across multiple logic families without timing skew. |
Use Scenario: Implementing fast, low-component-count inverters in battery-powered sensor nodes or wearables. IC Role / Device Role / Timing Role: Single-transistor inverter with fixed bias network, delivering rail-to-rail output swing. Use Value: SOT416 package and integrated resistors reduce total solution size to <1.5 mm², critical for ultra-compact designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC123EK | SOT346 (SC-59) package; Ptot = 250 mW; Rth(j-a) = 500 K/W | Higher power handling and better thermal performance, but larger footprint (3.1 × 2.7 mm vs. 1.7 × 1.4 mm) | Select when thermal margin is critical and board space allows larger SOT346 placement. |
| PDTC123ET | SOT23 package; same R1/R2 values; Ptot = 250 mW; Rth(j-a) = 500 K/W | Improved thermal dissipation over PDTC123EE but requires different land pattern and stencil design | Choose for higher reliability in sustained 100 mA operation where SOT416 thermal limits may be exceeded. |
Compared with PDTC123EK and PDTC123ET, the PDTC123EE offers the smallest footprint (SOT416) and lowest assembly cost for space-constrained, low-duty-cycle switching-while both alternatives provide greater thermal headroom at the expense of PCB area and layout compatibility.
Availability
PDTC123EE is available at Aetrix Electronics and suitable for logic-level interface drivers, microcontroller GPIO expansion, and compact inverter stages requiring stable component supply across industrial control, consumer electronics, and IoT edge device production.
Supply support for PDTC123EE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PDTC123EE belongs to NXP's resistor-equipped transistor family, engineered specifically to simplify digital switching designs by integrating precision bias networks into miniature surface-mount packages.
FAQ
What is the maximum continuous collector current for PDTC123EE?
The PDTC123EE has a maximum DC output current (IO) rating of 100 mA, as specified in the Quick Reference Data and Limiting Values sections of its NXP product data sheet. This value applies under ambient temperature ≤25 °C and assumes proper PCB thermal relief. Derating is required above 25 °C per the thermal resistance Rth(j-a) = 833 K/W for the SOT416 package. Exceeding 100 mA risks thermal runaway or permanent degradation of the PDTC123EE.
Does PDTC123EE require external base resistors?
No, the PDTC123EE does not require external base resistors because it integrates two precision 2.2 kΩ resistors internally-one between base and input (R1), and one between base and emitter (R2). This configuration allows direct connection to 3.3 V or 5 V logic outputs, eliminating discrete bias components and simplifying schematic capture and PCB layout for the PDTC123EE.
What is the pin configuration of PDTC123EE in the SOT416 package?
The PDTC123EE uses a standardized 3-pin SOT416 (SC-75) pinout: Pin 1 is the base terminal (accessed via internal R1–R2 network), Pin 2 is the collector, and Pin 3 is the emitter. This arrangement is explicitly confirmed in the "Simplified outline, symbol and pinning" section of the NXP datasheet and matches the top-view marking diagram for PDTC123EE. No alternate pinouts apply to this specific type number.
Can PDTC123EE be used with 1.8 V logic inputs?
Yes, PDTC123EE can be reliably driven by 1.8 V logic inputs: its typical input-on voltage (Vi(on)) is 1.6 V at IC = 20 mA and VCE = 0.3 V, and minimum guaranteed Vi(on) is 1.2 V. With a 1.8 V source, the base-emitter junction receives sufficient forward bias to achieve full saturation, making the PDTC123EE compatible with modern low-voltage MCUs and FPGAs without level-shifting circuitry.
What is the thermal resistance (Rth(j-a)) of PDTC123EE?
The PDTC123EE has a junction-to-ambient thermal resistance (Rth(j-a)) of 833 K/W when mounted in free air on standard FR4 PCB, as documented in the Thermal Characteristics table of the NXP datasheet. This high value reflects the ultra-small SOT416 package size and mandates careful thermal design-such as copper pour under the pad or reduced duty cycle-if operating near its 150 mW power dissipation limit or at elevated ambient temperatures.
PDTC123EE,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
PDTC123EE,115 FAQ
1.How can I place an order for PDTC123EE,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTC123EE,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTC123EE,115 reliable?
The price and inventory of PDTC123EE,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC123EE,115 is usually 5 days.
3.What payment methods are accepted for PDTC123EE,115?
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4.How is shipping managed for PDTC123EE,115?
PDTC123EE,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTC123EE,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTC123EE,115?
For technical support, including PDTC123EE,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC123EE,115 requirements.
6.How does Aetrix verify that PDTC123EE,115 is sourced from the original manufacturer or authorized distributors?
All PDTC123EE,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC123EE,115 meets industry standards.
7.What is the process for return or replacement of PDTC123EE,115?
All PDTC123EE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC123EE,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTC123EE,115 part is unused and in its original packaging.
Return procedure for PDTC123EE,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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