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NXP Semiconductors PDTC123EK,115
- Part No.:
- PDTC123EK,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PDTC123EK,115.pdf
- Description:
- TRANS PREBIAS NPN 50V 0.1A SMT3
- Quantity:
- Payment:
- Shipping:
Inventory:3,329
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Product details
Overview
PDTC123EK,115 from NXP Semiconductors is an NPN resistor-equipped transistor with integrated 2.2 kΩ base bias resistors (R1 and R2), designed for low-voltage digital switching in space-constrained PCB layouts. It supports DC output current up to 100 mA, withstands 50 V collector-emitter voltage, and operates reliably across −65 °C to +150 °C ambient temperature - commonly deployed in logic-level interface circuits for microcontroller I/O expansion.
For engineers reviewing the PDTC123EK,115 datasheet, PDTC123EK,115 pinout, PDTC123EK,115 application, or PDTC123EK,115 equivalent, key selection criteria include verified SOT346 (SC-59) package compatibility, confirmed 100 mA output drive capability, validated input-off/on voltage thresholds (Vi(off) = 1.2 V typ., Vi(on) = 1.6 V typ.), and thermal resistance of 500 K/W in free air.
Technical Context
The PDTC123EK,115 integrates two precision 2.2 kΩ resistors (R1 = base-to-VIN, R2 = base-to-emitter) to form a monolithic NPN digital transistor with fixed bias network. Its internal configuration eliminates external base resistors and ensures consistent turn-on/turn-off behavior under varying load conditions.
It delivers guaranteed DC current gain (hFE) ≥30 at VCE = 5 V and IC = 20 mA, achieves VCE(sat) ≤150 mV at IC = 10 mA / IB = 0.5 mA, and maintains leakage currents below 1 μA (ICEO) and 100 nA (ICBO) - enabling robust noise immunity in 3.3 V and 5 V logic interfacing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V maximum - supports safe operation in 24 V industrial control signal paths without derating. |
| IO (DC) | 100 mA - sufficient to directly drive LEDs, small relays, or MOSFET gates in compact sensor nodes. |
| R1 / R2 | 2.2 kΩ ±30% - provides stable logic-level-compatible base biasing without external components. |
| Vi(on) | 1.6 V typical - ensures reliable activation from 1.8 V and 3.3 V MCU GPIO outputs. |
| Vi(off) | 1.2 V typical - guarantees cutoff margin against noise in mixed-signal environments. |
| VCE(sat) | ≤150 mV at 10 mA - minimizes power loss and self-heating in high-duty-cycle switching. |
| Rth(j-a) | 500 K/W - defines thermal performance in standard FR4 PCB layout with SOT346 footprint. |
Pinout & Package
PDTC123EK,115 is housed in the SOT346 (TO-236AA, SC-59A) plastic surface-mounted package - a 3-lead, gull-wing leaded outline measuring 3.1 mm × 1.7 mm × 1.3 mm with 0.95 mm lead pitch. The package supports reflow soldering only and is rated for 250 mW total power dissipation at Tamb ≤ 25 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Internal connection to R1 (2.2 kΩ) and R2 (2.2 kΩ); accepts logic-level input voltage. |
| 2 | Emitter | Common emitter node; referenced to ground or low-side return path in switching configurations. |
| 3 | Collector | Output terminal sourcing up to 100 mA; connects to load (e.g., LED anode, relay coil, gate pull-up). |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | Monolithic R1/R2 = 2.2 kΩ each eliminates need for two external resistors - reduces BOM count by 2 parts per channel. |
| Logic-compatible input threshold | Vi(on) = 1.6 V typ. enables direct drive from 1.8 V and 3.3 V microcontrollers without level-shifting. |
| Low saturation voltage | VCE(sat) ≤150 mV at 10 mA ensures <1.5 mW conduction loss - critical for battery-powered sensor nodes. |
| Thermal reliability | Rth(j-a) = 500 K/W in SOT346 allows continuous 100 mA operation with <50 °C junction rise on standard PCB. |
| Wide temperature range | Specified from −65 °C to +150 °C ambient - qualified for automotive under-hood and industrial motor-control applications. |
Applications
| LED Driver Circuit | Microcontroller GPIO Expander |
|---|---|
|
Use Scenario: Driving multiple indicator LEDs from a resource-constrained MCU with limited GPIO count and no external passive components. IC Role / Device Role: Low-side switch that translates logic-high GPIO signal into controlled LED current path to ground. Use Value: Eliminates two external resistors per channel, reducing PCB area by ~2.5 mm² per instance and simplifying assembly. |
Use Scenario: Adding discrete digital output capability to an embedded system where all native GPIOs are allocated to analog sensing or communication. IC Role / Device Role: Logic-level translator and current amplifier enabling MCU to control higher-current peripherals (e.g., solenoids, fans). Use Value: Provides 100 mA sink capability with guaranteed Vi(off)/Vi(on) margins - avoids false triggering in noisy industrial enclosures. |
| Level-Shifting Interface | Power Sequencing Control |
|
Use Scenario: Interfacing 1.8 V FPGA I/O banks to 5 V peripheral logic while maintaining signal integrity and timing predictability. IC Role / Device Role: Unidirectional voltage-level translator using saturated NPN switching action. Use Value: Fixed 2.2 kΩ bias network ensures consistent switching thresholds independent of supply rail variations - no calibration required. |
Use Scenario: Enabling/disabling power rails in multi-voltage systems (e.g., 3.3 V core, 1.2 V I/O) based on system state machine signals. IC Role / Device Role: Enable gate driver for external PMOS high-side switches or LDO enable inputs. Use Value: 50 V VCEO rating and 100 mA IO support direct control of enable pins on wide-input PMICs without additional buffering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC123ET,115 | SOT23 package (smaller footprint: 3.0 mm × 1.4 mm); identical R1/R2 values and electrical specs. | Higher thermal resistance (500 K/W same as PDTC123EK,115) but lower max Ptot (250 mW vs. 250 mW - equal rating). | Select when board space is tighter and thermal mass is sufficient; pinout differs (1=base, 2=emitter, 3=collector). |
| PDTC123EU,115 | SOT323 package (2.2 mm × 1.35 mm); same R1/R2 and VCEO/IO, but Rth(j-a) = 625 K/W and Ptot = 200 mW. | Lower power handling limits continuous 100 mA use; better suited for intermittent LED blinking than sustained relay driving. | Choose for ultra-dense portable designs where peak current is <50 mA and duty cycle <30%. |
Compared with PDTC123EK,115, the PDTC123ET,115 offers identical electrical performance in a smaller SOT23 body but requires revised land pattern and orientation; the PDTC123EU,115 trades thermal margin for minimal footprint - both require validation of PCB copper pour and airflow in final layout.
Availability
PDTC123EK,115 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, and level-shifting interfaces requiring stable component supply across automotive, industrial control, and consumer electronics production cycles.
Supply support for PDTC123EK,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PDTC123EK,115 belongs to NXP's resistor-equipped transistor (RET) product line - engineered to reduce discrete component count and improve manufacturing yield in digital interface and switching applications.
FAQ
What is the pin configuration of PDTC123EK,115?
The PDTC123EK,115 uses a SOT346 package with pin 1 = Base, pin 2 = Emitter, and pin 3 = Collector. This configuration is explicitly defined in the "Simplified outline, symbol and pinning" section of the official NXP datasheet (2004 Aug 06 revision). The internal bias resistors R1 and R2 connect between pin 1 and the input terminal and emitter respectively - confirming its role as a single-input, grounded-emitter switch.
Does PDTC123EK,115 support 1.8 V logic input levels?
Yes, PDTC123EK,115 supports 1.8 V logic input levels: its typical input-on voltage (Vi(on)) is 1.6 V at IC = 20 mA and VCE = 0.3 V, providing 0.2 V noise margin. The datasheet confirms operation down to Vi(on) = 2.0 V maximum, ensuring reliable turn-on even with voltage droop or temperature drift in 1.8 V systems.
What is the maximum continuous collector current for PDTC123EK,115?
The maximum continuous DC collector current (IO) for PDTC123EK,115 is 100 mA, as specified in the Quick Reference Data and Limiting Values tables of the NXP datasheet. This rating applies at Tamb ≤ 25 °C with standard PCB mounting; derating is required above 25 °C ambient per the thermal resistance (Rth(j-a) = 500 K/W) and Ptot = 250 mW limit.
Can PDTC123EK,115 replace a discrete BJT + two resistors?
Yes, PDTC123EK,115 is designed as a functional replacement for an NPN BJT plus two 2.2 kΩ bias resistors. Its integrated R1 and R2 match the exact values used in common digital transistor configurations, eliminating layout complexity and solder joint risk. The PDTC123EK,115 maintains identical electrical behavior - including hFE ≥30 and VCE(sat) ≤150 mV - under the same operating conditions.
Is PDTC123EK,115 RoHS compliant and halogen-free?
Yes, PDTC123EK,115 is RoHS compliant and halogen-free. As a standard NXP product manufactured after 2006, it conforms to EU Directive 2011/65/EU (RoHS 2) and IEC 61249-2-21:2011 for bromine/chlorine content. The "Product data sheet" status indicates Production-level qualification, and NXP's public compliance documentation confirms full material declaration for SOT346-packaged RET devices.
PDTC123EK,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMT3; MPAK
PDTC123EK,115 FAQ
1.How can I place an order for PDTC123EK,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTC123EK,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTC123EK,115 reliable?
The price and inventory of PDTC123EK,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC123EK,115 is usually 5 days.
3.What payment methods are accepted for PDTC123EK,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC123EK,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTC123EK,115?
PDTC123EK,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTC123EK,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTC123EK,115?
For technical support, including PDTC123EK,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC123EK,115 requirements.
6.How does Aetrix verify that PDTC123EK,115 is sourced from the original manufacturer or authorized distributors?
All PDTC123EK,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC123EK,115 meets industry standards.
7.What is the process for return or replacement of PDTC123EK,115?
All PDTC123EK,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC123EK,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTC123EK,115 part is unused and in its original packaging.
Return procedure for PDTC123EK,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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