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Nexperia USA Inc. PDTC123EMB,315
- Part No.:
- PDTC123EMB,315
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- -
- Datasheet:
-
PDTC123EMB,315.pdf
- Description:
- TRANS PREBIAS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
PDTC123EMB from Nexperia is an NPN resistor-equipped transistor (RET) in a leadless DFN1006B-3 (SOT883B) package, designed as a single-chip digital switch with integrated 2.2 kΩ input and feedback bias resistors. It delivers 100 mA output current, supports 50 V collector-emitter voltage, and is AEC-Q101 qualified for automotive use - commonly deployed in low-current peripheral driver circuits and IC input control stages.
For engineers reviewing the PDTC123EMB datasheet, PDTC123EMB pinout, PDTC123EMB application, or PDTC123EMB equivalent, key selection considerations include its built-in resistor ratio (R2/R1 = 1.0 ±0.2), ultra-low profile (0.37 mm height), thermal resistance (500 K/W), and suitability for space-constrained mobile and automotive signal-switching designs.
Technical Context
This RET integrates an NPN bipolar transistor with two monolithically embedded thin-film resistors: R1 (2.2 kΩ) connected between base and input, and R2 (2.2 kΩ) between base and emitter. The fixed 1:1 bias ratio enables predictable saturation behavior without external components.
It operates as a digital on/off switch with VI(on) = 1.6 V (typ) at IC = 20 mA and VI(off) = 1.2 V (typ), ensuring clean logic-level compatibility with 1.8 V–5 V microcontrollers. Its fT = 230 MHz (typ) and CC = 2.5 pF support fast switching in low-power digital interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage under open-base conditions; defines voltage headroom for 24 V automotive or 3.3/5 V logic interface applications. |
| IO | 100 mA - Continuous DC output current capability; sufficient to drive LEDs, small relays, or logic inputs without external current amplification. |
| R1 | 2.2 kΩ (±30%) - Input bias resistor enabling direct connection to MCU GPIO; eliminates need for discrete pull-up/base resistor. |
| R2/R1 | 1.0 (±0.2) - Fixed feedback-to-input resistor ratio ensuring stable turn-on threshold and consistent hFE effective gain across temperature. |
| Ptot | 250 mW at Tamb ≤25 °C - Power dissipation limit defining maximum continuous switching duty cycle in FR4 PCB environments. |
| fT | 230 MHz (typ) - Transition frequency confirming suitability for >1 MHz digital switching (e.g., PWM dimming, data enable gating). |
| Rth(j-a) | 500 K/W - Junction-to-ambient thermal resistance on standard FR4; informs derating above 25 °C ambient (e.g., 150 mW at 75 °C). |
Pinout & Package
Package: DFN1006B-3 (SOT883B), leadless ultra-small plastic package; dimensions 1.0 × 0.6 × 0.37 mm; 3 solder lands; bottom-side thermal pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (I) | Input (base node) | Direct connection point for logic-level control signal; internally tied to R1 top terminal. |
| 2 (G) | GND (emitter) | Emitter reference and return path; connects to system ground plane; serves as common node for R2 and transistor emitter. |
| 3 (O) | Output (collector) | Switched high-side output node; sinks current when active; connects to load (e.g., LED cathode, IC input pull-down). |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | Monolithic R1 + R2 resistors eliminate 2 external components and reduce BOM count in digital switching nodes. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM ≥8 kV), enabling use in body electronics modules. |
| Ultra-compact footprint | DFN1006B-3 (1.0 × 0.6 mm) saves >70% board area vs. SOT23, critical for wearable and ultra-thin mobile PCBs. |
| Low-profile packaging | 0.37 mm max height enables stacking under shields or integration into tight mechanical envelopes (e.g., camera modules). |
| Logic-compatible VI(on)/VI(off) | 1.6 V typical turn-on and 1.2 V typical turn-off thresholds ensure robust operation with 1.8 V and 3.3 V I/O standards. |
Applications
| Automotive Body Control Module | Smartphone Peripheral Interface |
|---|---|
Use Scenario: Driving LED status indicators and small solenoid valves in door module PCBs. IC Role / Device Role / Timing Role: Digital output switch replacing discrete BJT + two resistors; provides level-shifted, current-limited drive from 3.3 V MCU GPIO. Use Value: Reduces component count by 3 per channel and improves assembly yield via single-component placement. |
Use Scenario: Enabling/disabling sensors (e.g., ambient light, proximity) during sleep mode to minimize leakage current. IC Role / Device Role / Timing Role: Low-leakage (ICEO ≤1 µA) enable switch placed between sensor VDD and power rail. Use Value: Achieves sub-µA shutdown current while maintaining fast (<100 ns) wake-up response due to high fT. |
| Industrial IoT Sensor Node | Wearable Health Monitor |
Use Scenario: Controlling RS-485 transceiver direction pins and isolated gate drivers in compact PLC edge nodes. IC Role / Device Role / Timing Role: Logic-level translator and current booster for microcontroller GPIOs driving higher-capacitance bus lines. Use Value: Ensures clean 0–5 V swing with <150 mV VCE(sat), reducing bus settling time and improving noise margin. |
Use Scenario: Managing power sequencing for optical heart-rate sensor LEDs and analog front-end ICs in earbud-sized devices. IC Role / Device Role / Timing Role: Ultra-small-area load switch enabling independent power domain control with minimal layout impact. Use Value: 0.37 mm height allows placement beneath battery or flex cable; 100 mA rating supports pulsed LED drive up to 50 mA peak. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC114EMB | R1 = 10 kΩ, R2 = 10 kΩ - higher input impedance reduces MCU GPIO loading but increases VI(on) to 2.0 V (typ). | Better suited for 5 V logic systems; less optimal for 1.8 V/3.3 V MCUs due to higher turn-on threshold. | Select when interfacing with legacy 5 V controllers or where lower input current (<1 µA standby) is prioritized over speed. |
| PDTC143EMB | R1 = 4.7 kΩ, R2 = 4.7 kΩ - intermediate bias value yields VI(on) = 1.8 V (typ); fT = 180 MHz (typ), ~22% lower than PDTC123EMB. | Slightly slower switching; suitable for <500 kHz PWM or general-purpose logic buffering where 230 MHz is unnecessary. | Choose for cost-sensitive consumer applications where marginal speed reduction is acceptable for broader supply-chain availability. |
Compared with PDTC114EMB and PDTC143EMB, PDTC123EMB offers the lowest VI(on) and highest fT among Nexperia's 100 mA RET family, making it optimal for high-speed, low-voltage digital switching in space-constrained automotive and portable designs.
Availability
PDTC123EMB is available at Aetrix Electronics and suitable for automotive body electronics, smartphone peripheral control, industrial IoT sensor nodes, and wearable health monitors requiring stable component supply and AEC-Q101 compliance.
Supply support for PDTC123EMB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and PowerMOS devices for automotive, industrial, computing, and consumer markets.
PDTC123EMB belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to replace discrete BJT + resistor combinations in digital switching applications - emphasizing miniaturization, assembly efficiency, and automotive-grade robustness.
FAQ
What is the maximum allowable junction temperature for PDTC123EMB?
The absolute maximum junction temperature (Tj) is 150 °C, as defined in the limiting values table. Operation beyond this temperature risks permanent degradation of the silicon die and embedded resistors. Derating begins at 25 °C ambient, with total power dissipation linearly reduced to zero at 150 °C ambient per the published power derating curve.
Can PDTC123EMB be used in reverse-biased configurations (e.g., emitter-follower mode)?
No - PDTC123EMB is optimized as a grounded-emitter NPN switch. Its internal R1–R2 network assumes emitter (Pin 2) as the reference node. Using it in emitter-follower or inverted configurations disrupts biasing, invalidates VI(on)/VI(off) specifications, and may cause unpredictable conduction or thermal overstress due to uncontrolled base current paths.
Is reflow soldering the only recommended assembly method?
Yes - the datasheet explicitly states that reflow soldering is the only recommended method. Hand soldering or wave soldering is not qualified and risks damage due to the DFN1006B-3 package's thermal sensitivity and small land geometry. Reflow profiles must follow JEDEC J-STD-020, with peak temperature ≤260 °C and time above liquidus ≤60 seconds.
How does the R2/R1 ratio tolerance affect switching performance?
The R2/R1 ratio tolerance of ±0.2 directly impacts the effective base current and thus the guaranteed saturation margin. At R2/R1 = 0.8, hFE effective drops, increasing VCE(sat); at 1.2, excess base drive may raise power loss. Designers should verify worst-case VCE(sat) (≤150 mV typ, ≤250 mV max) and switching speed using the min/max R1 (1.54 kΩ / 2.86 kΩ) in SPICE simulations.
PDTC123EMB,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Resistor - Base (R1):
- -
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- -
- Power - Max:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
PDTC123EMB,315 FAQ
1.How can I place an order for PDTC123EMB,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTC123EMB,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTC123EMB,315 reliable?
The price and inventory of PDTC123EMB,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC123EMB,315 is usually 5 days.
3.What payment methods are accepted for PDTC123EMB,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC123EMB,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTC123EMB,315?
PDTC123EMB,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTC123EMB,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTC123EMB,315?
For technical support, including PDTC123EMB,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC123EMB,315 requirements.
6.How does Aetrix verify that PDTC123EMB,315 is sourced from the original manufacturer or authorized distributors?
All PDTC123EMB,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC123EMB,315 meets industry standards.
7.What is the process for return or replacement of PDTC123EMB,315?
All PDTC123EMB,315 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC123EMB,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTC123EMB,315 part is unused and in its original packaging.
Return procedure for PDTC123EMB,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTC123EMB,315 Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
Rohm Semiconductor
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DDTD113ZC-7-F
Diodes Incorporated
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DRDNB16W-7
Diodes Incorporated
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PDTC114ET,215
Nexperia USA Inc.
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PDTC143ZT,215
Nexperia USA Inc.
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PDTC143ET,215
Nexperia USA Inc.
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PDTC143XT,215
Nexperia USA Inc.
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MMUN2211LT1G
onsemi
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PDTC144ET,215
Nexperia USA Inc.
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PDTC124ET,215
Nexperia USA Inc.
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