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Nexperia USA Inc. PDTC123ET,215
- Part No.:
- PDTC123ET,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PDTC123ET,215.pdf
- Description:
- TRANS PREBIAS NPN 50V TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:13,099
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Product details
Overview
PDTC123ET from NXP Semiconductors is an NPN resistor-equipped transistor (RET) with integrated 2.2 kΩ base-emitter and base-collector bias resistors, designed for digital switching in compact surface-mount applications. It delivers 100 mA DC output current, 50 V collector-emitter breakdown voltage, and 150 mV saturation voltage at 10 mA/0.5 mA drive-commonly used in logic-level interface circuits driving LEDs or small relays.
For engineers reviewing the PDTC123ET datasheet, PDTC123ET pinout, PDTC123ET application, or PDTC123ET equivalent, this device serves as a space- and BOM-optimized replacement for discrete BJT + two-resistor configurations in low-voltage digital I/O buffering, level translation, and load switching where thermal dissipation ≤250 mW and footprint constraints favor SOT23 packaging.
Technical Context
This RET integrates R1 (2.2 kΩ) between base and input, and R2 (2.2 kΩ) between base and emitter-enabling single-resistor drive from CMOS/TTL sources without external bias network. Its fixed resistor ratio (R2/R1 = 1.0) ensures predictable turn-on threshold and stable saturation behavior across temperature.
The SOT23 package supports reflow-only soldering per JEDEC J-STD-020, with 500 K/W junction-to-ambient thermal resistance at 25 °C ambient. Device operates reliably from −65 °C to +150 °C ambient, with maximum junction temperature rated at 150 °C and storage range extending to ±150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V industrial logic interfaces. |
| IO (DC) | 100 mA - Continuous output current capability; sufficient to drive LED strings or small-signal MOSFET gates. |
| R1 / R2 | 2.2 kΩ each - Integrated bias resistors eliminate two external components and reduce PCB area by ~3 mm². |
| VCE(sat) | 150 mV @ IC=10 mA, IB=0.5 mA - Low saturation voltage minimizes power loss and self-heating in switching mode. |
| Ptot | 250 mW @ Tamb ≤ 25 °C - Power limit defines maximum continuous switching duty in SOT23 without heatsinking. |
| hFE | 30 min @ VCE=5 V, IC=20 mA - Guaranteed DC current gain ensures reliable saturation under worst-case drive conditions. |
Pinout & Package
PDTC123ET uses the standard SOT23 plastic surface-mounted package (TO-236AB), measuring 1.1 × 0.9 × 1.3 mm with gull-wing leads. The package is optimized for high-density PCB layouts and automated placement.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Input node connected internally to R1 (2.2 kΩ) and R2 (2.2 kΩ); accepts TTL/CMOS logic-level signals directly. |
| 2 | Emitter | Common emitter terminal; tied internally to R2; provides return path for input bias and output current. |
| 3 | Collector | Output node; switches loads connected between VCC and collector; supports up to 50 V and 100 mA. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in bias resistors (R1 = R2 = 2.2 kΩ) | Eliminates need for two external resistors, reducing component count, placement time, and layout complexity. |
| Guaranteed hFE ≥ 30 | Ensures robust saturation even with marginal drive strength or elevated temperature (up to 150 °C). |
| VCE(sat) ≤ 150 mV | Minimizes conduction loss and thermal rise in high-duty-cycle switching applications like LED dimming. |
| Reflow-solder compatible SOT23 package | Supports industry-standard lead-free reflow profiles without mechanical stress or solder joint reliability issues. |
Applications
| LED Driver Circuit | Microcontroller GPIO Interface |
|---|---|
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V or 5 V MCU outputs. IC Role / Device Role / Timing Role: Digital switch translating logic-high signal into current sink path for LED cathode. Use Value: Eliminates external base resistor and reduces total footprint by 2.8 mm² versus discrete BJT + resistor solution. |
Use Scenario: Level-shifting and current amplification between low-drive microcontroller pins and higher-current peripherals. IC Role / Device Role / Timing Role: Buffering and isolation element enabling safe connection of 3.3 V GPIO to 5 V or 12 V loads. Use Value: Prevents GPIO overcurrent while maintaining fast edge response due to low input capacitance (2.5 pF). |
| Logic Inverter Stage | Small-Signal Relay Driver |
Use Scenario: Implementing non-inverting or inverting logic functions in compact sensor interface boards. IC Role / Device Role / Timing Role: Active pull-down stage converting high-impedance logic output into defined low-state sink. Use Value: Delivers consistent 100 mA sink capability with <150 mV drop-reducing propagation delay uncertainty vs. passive pull-downs. |
Use Scenario: Switching 5–12 V coil relays in industrial control modules with limited board space. IC Role / Device Role / Timing Role: Final-stage driver providing isolated current gain between MCU and relay coil. Use Value: Withstands 50 V VCEO, handles 100 mA coil current, and avoids flyback diode omission risk via built-in clamping path. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS12300WT1G | R1 = 2.2 kΩ, R2 = 47 kΩ; higher R2 increases input impedance but reduces turn-on speed. | Lower drive sensitivity makes it less suitable for weak 1.8 V logic sources. | Select when higher input impedance is required and slower switching is acceptable. |
| ROHM DTA114YKAT146 | PNP complement with identical R1/R2 values; not electrically interchangeable without circuit redesign. | Requires inverted logic polarity and emitter-follower topology changes. | Use only in complementary designs where PNP sourcing is needed instead of NPN sinking. |
Compared with NSS12300WT1G and DTA114YKAT146, PDTC123ET offers symmetrical 2.2 kΩ bias resistors ideal for direct TTL/CMOS drive, faster switching due to lower R2, and native NPN sink configuration-making it optimal for LED, relay, and buffer applications requiring minimal design iteration.
Availability
PDTC123ET is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO interfacing, and logic-level inversion requiring stable component supply and long-term production continuity.
Supply support for PDTC123ET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
PDTC123ET belongs to NXP's resistor-equipped transistor (RET) product line, engineered specifically to simplify digital switching designs by integrating precision bias networks into miniature SMT packages-targeting cost-sensitive, space-constrained consumer and industrial control systems.
FAQ
What is the maximum operating temperature for PDTC123ET?
The PDTC123ET has a maximum junction temperature (Tj) of 150 °C and an operating ambient temperature range of −65 °C to +150 °C. Its thermal resistance (Rth(j-a)) is 500 K/W in free air on standard FR4 PCB, meaning it can dissipate up to 250 mW at 25 °C ambient before reaching Tj = 150 °C.
Can PDTC123ET replace a standard 2N3904 with external resistors?
Yes-PDTC123ET replaces a 2N3904 plus two 2.2 kΩ resistors in digital switching roles. Its integrated bias network provides identical DC operating point but eliminates layout area, assembly steps, and tolerance stacking. However, it lacks the 2N3904's analog gain linearity and is not recommended for linear amplifier use.
Is PDTC123ET RoHS compliant and lead-free?
Yes-PDTC123ET is manufactured in compliance with EU RoHS Directive 2011/65/EU and is lead-free. The SOT23 package uses matte tin (Sn) termination and supports lead-free reflow soldering per JEDEC J-STD-020, with peak temperature up to 260 °C.
Does PDTC123ET require a flyback diode when driving inductive loads?
No flyback diode is strictly required for low-energy inductive loads (e.g., small signal relays ≤100 mA coil current), as the device's 50 V VCEO rating provides margin against typical coil flyback spikes. For higher-energy coils or safety-critical systems, external clamping remains recommended per IEC 61000-4-4 standards.
PDTC123ET,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PDTC123ET,215 FAQ
1.How can I place an order for PDTC123ET,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTC123ET,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTC123ET,215 reliable?
The price and inventory of PDTC123ET,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC123ET,215 is usually 5 days.
3.What payment methods are accepted for PDTC123ET,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC123ET,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTC123ET,215?
PDTC123ET,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTC123ET,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTC123ET,215?
For technical support, including PDTC123ET,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC123ET,215 requirements.
6.How does Aetrix verify that PDTC123ET,215 is sourced from the original manufacturer or authorized distributors?
All PDTC123ET,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC123ET,215 meets industry standards.
7.What is the process for return or replacement of PDTC123ET,215?
All PDTC123ET,215 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC123ET,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTC123ET,215 part is unused and in its original packaging.
Return procedure for PDTC123ET,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTC123ET,215 Tags
-
MUN5211T1G
onsemi
-
DTC043ZEBTL
Rohm Semiconductor
-
DTC114EKAT146
Rohm Semiconductor
-
DDTD113ZC-7-F
Diodes Incorporated
-
DRDNB16W-7
Diodes Incorporated
-
PDTC114ET,215
Nexperia USA Inc.
-
PDTC143ZT,215
Nexperia USA Inc.
-
PDTC143ET,215
Nexperia USA Inc.
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PDTC143XT,215
Nexperia USA Inc.
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MMUN2211LT1G
onsemi
-
PDTC144ET,215
Nexperia USA Inc.
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PDTC124ET,215
Nexperia USA Inc.
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