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Nexperia USA Inc. PDTC123JMB,315
- Part No.:
- PDTC123JMB,315
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- 3-XFDFN
- Datasheet:
-
PDTC123JMB,315.pdf
- Description:
- TRANS PREBIAS NPN 50V 0.1A 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,415
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Product details
Overview
PDTC123JMB from Nexperia is an NPN resistor-equipped transistor (RET) in a leadless DFN1006B-3 (SOT883B) package, designed as a single-chip digital switch with integrated 2.2 kΩ input bias resistor (R1) and 47 kΩ feedback resistor (R2). It delivers 100 mA output current, supports 50 V collector-emitter voltage, and is AEC-Q101 qualified for automotive use - commonly deployed in low-current peripheral drivers and IC input control circuits.
For engineers reviewing the PDTC123JMB datasheet, PDTC123JMB pinout, PDTC123JMB application, or PDTC123JMB equivalent, key selection criteria include its built-in resistor ratio (R2/R1 = 21 typ), ultra-low profile (0.37 mm height), and verified performance across −40 °C to +150 °C ambient temperature range in mobile and automotive signal interface designs.
Technical Context
This RET integrates an NPN bipolar transistor with two monolithically embedded thin-film resistors: R1 (2.2 kΩ) connects base to input, and R2 (47 kΩ) connects base to emitter to enable self-biasing and eliminate external components. It operates as a saturated-switch device with guaranteed VCEsat ≤ 100 mV at IC = 5 mA / IB = 0.25 mA.
The device exhibits DC current gain (hFE) ≥ 100 at VCE = 5 V and IC = 10 mA, transition frequency fT = 230 MHz at same conditions, and thermal resistance Rth(j-a) = 500 K/W on FR4 PCB - confirming suitability for high-density, thermally constrained digital logic interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - maximum safe collector-emitter voltage before breakdown; enables use in 3.3 V/5 V/12 V logic-level switching without derating. |
| IO | 100 mA - continuous output current capability; sufficient to drive LEDs, small relays, or CMOS/TTL inputs directly. |
| R1 | 2.2 kΩ ±29% - input bias resistor value; sets base current for predictable turn-on with standard MCU GPIO voltages. |
| R2/R1 Ratio | 21 typ (17–26) - defines feedback strength for stable saturation and noise immunity; ensures reliable cutoff under leakage conditions. |
| VCEsat | ≤100 mV at IC = 5 mA / IB = 0.25 mA - low saturation voltage minimizes power loss and heat generation in always-on or PWM-driven loads. |
| fT | 230 MHz - transition frequency confirms usable bandwidth beyond typical digital switching (e.g., >10 MHz clocked signals). |
| AEC-Q101 | Qualified - meets stress-test requirements for automotive discrete semiconductors; validated for under-hood and infotainment applications. |
Pinout & Package
Package: DFN1006B-3 (SOT883B), leadless ultra-small surface-mount plastic package measuring 1.0 × 0.6 × 0.37 mm with 3 solder lands and 0.37 mm max height - optimized for space-constrained mobile and wearable PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (I) | Input (base connection via R1) | Accepts logic-level drive; internal R1 pulls base toward input, enabling direct MCU GPIO interfacing without external resistor. |
| 2 (G) | GND (emitter) | Emitter terminal tied to system ground; also serves as thermal and electrical reference point for the integrated R2 feedback path. |
| 3 (O) | Output (collector) | Switched high-side load node; sinks up to 100 mA when active; requires external pull-up or load connection to VCC. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | Monolithic R1 (2.2 kΩ) + R2 (47 kΩ) eliminates 2 external resistors, reducing BOM count and layout area by ~30% vs discrete transistor + bias solution. |
| Ultra-compact footprint | DFN1006B-3 (1.0 × 0.6 mm) saves >75% board area versus SOT23; compatible with fine-pitch reflow processes and automated optical inspection (AOI). |
| Saturation assurance | VCEsat ≤ 100 mV at rated current ensures <0.5 mW conduction loss per switch - critical for battery-powered wearables and always-on sensors. |
| Automotive qualification | AEC-Q101 compliance validates reliability under thermal cycling, humidity, and mechanical shock - required for body control modules and ADAS interface nodes. |
Applications
| Mobile Peripheral Driver | Automotive LED Indicator Control |
|---|---|
|
Use Scenario: Driving status LEDs and tactile feedback indicators in smartphones and smartwatches where board space and power efficiency are critical. IC Role / Device Role / Timing Role: Acts as a digitally controlled current sink switch, interfacing between application processor GPIO and LED anode/cathode paths. Use Value: Eliminates need for discrete base resistor and reduces PCB layer count; 0.37 mm height avoids interference with stacked FPC connectors. |
Use Scenario: Controlling dashboard warning lamps and interior lighting in passenger vehicles under ISO 16750 environmental stress. IC Role / Device Role / Timing Role: Provides robust, AEC-Q101-compliant on/off switching for 12 V LED strings with fast response (<1 µs rise/fall). Use Value: Built-in resistor ratio ensures stable turn-on despite battery voltage variation (9–16 V); no calibration required across production lots. |
| IoT Sensor Interface | Industrial Digital Input Conditioning |
|
Use Scenario: Level-shifting and debouncing signals from MEMS sensors or environmental monitors in battery-operated edge nodes. IC Role / Device Role / Timing Role: Functions as a noise-immune digital buffer, converting weak or floating sensor outputs into clean CMOS-compatible logic levels. Use Value: R2 feedback provides hysteresis-like behavior against ESD-induced glitches; VI(off) ≤ 0.6 V ensures reliable cutoff below MCU logic low threshold. |
Use Scenario: Converting 24 V industrial field signals (e.g., proximity switches) to 3.3 V microcontroller inputs in PLC I/O modules. IC Role / Device Role / Timing Role: Serves as a high-voltage tolerant input stage with integrated current limiting and ESD protection (IEC 61000-4-2 level 4 compliant). Use Value: 50 V VCEO rating allows direct connection to 24 V lines with series resistor only; eliminates need for optocoupler or dedicated level shifter IC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC143ZKB,315 | R1 = 4.7 kΩ, R2 = 47 kΩ → higher input impedance, lower base current (≈0.7 mA @ 3.3 V) | Better suited for ultra-low-power MCU GPIOs with limited drive strength; reduced switching speed due to higher R1 | Select when minimizing input loading is critical and 50 mA output suffices. |
| PDTA123JMB,315 | PNP complement with identical R1/R2 values and package; VECO = 50 V, IO = −100 mA | Required for high-side switching or complementary push-pull configurations; not interchangeable in NPN topology | Choose only for PNP-side implementation in dual-transistor driver stages. |
Compared with PDTC123JMB, PDTC143ZKB offers lower input current draw but sacrifices speed and output drive; PDTA123JMB enables complementary circuit design but cannot replace NPN functionality - selection depends strictly on topology, drive strength, and polarity requirements.
Availability
PDTC123JMB is available at Aetrix Electronics and suitable for mobile peripheral driver, automotive LED indicator control, and IoT sensor interface applications requiring stable component supply and long-term lifecycle support.
Supply support for PDTC123JMB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with core focus on automotive, industrial, computing, and consumer markets.
PDTC123JMB belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to simplify digital interface design by integrating precision bias networks into ultra-miniature packages for space- and power-constrained systems.
FAQ
Is PDTC123JMB compatible with lead-free reflow soldering processes?
Yes. PDTC123JMB uses a DFN1006B-3 package qualified for standard lead-free reflow profiles (JEDEC J-STD-020), including peak temperatures up to 260 °C. Its tin-plated terminations ensure reliable wetting and intermetallic formation without voiding or delamination on FR4 PCBs.
What is the maximum allowable input voltage at Pin 1 (I)?
The absolute maximum input voltage at Pin 1 is +12 V (positive) and −5 V (negative), per the VI rating in Table 5. Exceeding these limits risks permanent damage to the internal R1 resistor or base-emitter junction, even if VCEO remains within spec.
Does PDTC123JMB require an external pull-up resistor on the collector (Pin 3)?
Yes - Pin 3 is an open-collector output. An external pull-up resistor to VCC is required to establish logic-high state when the transistor is off. Typical values range from 1 kΩ to 10 kΩ depending on load capacitance and switching speed requirements.
How does the R2/R1 ratio affect switching behavior in noisy environments?
The R2/R1 ratio of 21 typ provides internal feedback that raises the effective input threshold and improves noise margin. At VCE = 5 V, VI(off) is guaranteed ≤ 0.6 V, ensuring reliable cutoff even with ±200 mV of coupled noise - critical for industrial and automotive signal integrity.
PDTC123JMB,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 230 MHz
- Power - Max:
- 250 mW
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1006B-3
PDTC123JMB,315 FAQ
1.How can I place an order for PDTC123JMB,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTC123JMB,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTC123JMB,315 reliable?
The price and inventory of PDTC123JMB,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC123JMB,315 is usually 5 days.
3.What payment methods are accepted for PDTC123JMB,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC123JMB,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTC123JMB,315?
PDTC123JMB,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTC123JMB,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTC123JMB,315?
For technical support, including PDTC123JMB,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC123JMB,315 requirements.
6.How does Aetrix verify that PDTC123JMB,315 is sourced from the original manufacturer or authorized distributors?
All PDTC123JMB,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC123JMB,315 meets industry standards.
7.What is the process for return or replacement of PDTC123JMB,315?
All PDTC123JMB,315 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC123JMB,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTC123JMB,315 part is unused and in its original packaging.
Return procedure for PDTC123JMB,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTC123JMB,315 Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
Rohm Semiconductor
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DDTD113ZC-7-F
Diodes Incorporated
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DRDNB16W-7
Diodes Incorporated
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PDTC114ET,215
Nexperia USA Inc.
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PDTC143ZT,215
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PDTC143ET,215
Nexperia USA Inc.
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PDTC143XT,215
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MMUN2211LT1G
onsemi
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PDTC144ET,215
Nexperia USA Inc.
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PDTC124ET,215
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