NXP Semiconductors PDTC123TE,115
- Part No.:
- PDTC123TE,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-75, SOT-416
- Datasheet:
-
PDTC123TE,115.pdf
- Description:
- TRANS PREBIAS NPN 50V 0.1A SC75
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
PDTC123TE from Nexperia is an NPN resistor-equipped transistor (RET) in SOT416 (SC-75) surface-mount package, designed for digital switching with integrated 2.2 kΩ base bias resistor (R1), 50 V VCEO, 100 mA output current capability, and 150 mV VCEsat at IC = 10 mA/IB = 0.5 mA - used in low-power logic-level interface and load control circuits.
For engineers reviewing the PDTC123TE datasheet, PDTC123TE pinout, PDTC123TE application, or PDTC123TE equivalent, this page delivers verified package mapping (SOT416), confirmed pin roles (base-input/emitter-GND/collector-output), thermal resistance (833 K/W), R1 tolerance (1.54–2.86 kΩ), and direct alternatives for BC847-based digital switch designs.
Technical Context
The PDTC123TE integrates a single 2.2 kΩ input bias resistor (R1) with open R2 configuration, eliminating external base resistors in saturated-switch applications. Its NPN structure supports DC current gain (hFE) ≥30 at IC = 20 mA/VCE = 5 V and exhibits low leakage: ICEO ≤1 µA at VCE = 30 V and ≤50 µA at Tj = 150 °C.
Thermal performance is specified for FR4 PCB mounting with single-sided copper (833 K/W Rth(j-a)), and absolute maximum ratings include 50 V VCBO/VCEO, 5 V VEBO, and 150 °C junction temperature - confirming suitability for ambient-temperature-stable digital logic interfacing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - supports rail-to-rail switching up to 5 V logic systems with safety margin |
| IO | 100 mA - drives moderate-current loads like LEDs, small relays, or gate inputs |
| R1 | 2.2 kΩ (1.54–2.86 kΩ) - sets base current for predictable saturation without external resistor |
| VCEsat | ≤150 mV at IC=10 mA/IB=0.5 mA - ensures low conduction loss and minimal self-heating |
| hFE | ≥30 at VCE=5 V/IC=20 mA - guarantees reliable on-state gain for digital switching |
| Ptot | 150 mW at Tamb ≤25 °C - defines power envelope for SOT416 thermal design |
| Rth(j-a) | 833 K/W - indicates thermal limitation requiring minimal copper area or derating above 25 °C |
Pinout & Package
SOT416 (SC-75) is a 3-lead ultra-small surface-mount plastic package measuring 1.75 × 0.95 × 0.7 mm, optimized for high-density PCB layouts and reflow soldering only.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connects to driving logic signal; internal R1 pulls base toward VCC when active |
| 2 | GND (emitter) | Common reference node; must be tied to system ground for proper biasing |
| 3 | output (collector) | Switches load between VCC and this node; sinks current when saturated |
Key Features
| Feature | Design Value |
|---|---|
| Integrated R1 bias resistor | Eliminates need for external base resistor, reducing BOM count by one component |
| Low VCEsat | 150 mV max enables efficient switching with <150 µW conduction loss at 1 mA load |
| High VCEO rating | 50 V withstand allows use in 3.3 V, 5 V, and 12 V logic domains without derating |
| SC-75 footprint | SOT416 package supports 0.5 mm pitch routing and automated pick-and-place assembly |
| 100 mA IO capability | Supports direct drive of microcontroller GPIO outputs into medium-current loads |
Applications
| Logic-Level Signal Switching | Microcontroller GPIO Load Control |
|---|---|
Use Scenario: Isolating and level-shifting signals between mixed-voltage ICs (e.g., 3.3 V MCU to 5 V peripheral). IC Role / Device Role / Timing Role: NPN RET acts as a unidirectional active pull-up/pull-down switch with defined turn-on threshold. Use Value: Integrated R1 ensures consistent base current across voltage rails, avoiding timing skew from external resistor tolerance. | Use Scenario: Driving LED indicators, small solenoids, or MOSFET gates directly from MCU GPIO pins. IC Role / Device Role / Timing Role: Acts as a saturated switch translating high-Z GPIO output into controlled current sink path. Use Value: 100 mA rating and 150 mV VCEsat minimize GPIO stress and heat generation during sustained on-state operation. |
| Board-Level Power Sequencing | Digital Input Conditioning |
Use Scenario: Enabling/disabling power to auxiliary subsystems (e.g., sensor modules) based on system state. IC Role / Device Role / Timing Role: Functions as a low-side enable switch controlling VCC return path to ground. Use Value: 50 V VCEO accommodates 12 V supply rails while maintaining safe margin against transients. | Use Scenario: Debouncing or noise filtering of mechanical switch inputs before MCU interrupt lines. IC Role / Device Role / Timing Role: Provides clean, latched digital input conditioning using RET's hysteresis-free switching. Use Value: Low ICEO (≤1 µA) prevents false triggering in high-impedance input configurations over temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847B,115 | Discrete NPN BJT requiring external 2.2 kΩ base resistor; no integrated R1 | Higher BOM count and layout area; requires additional passives for same function | Select when existing designs already use BC847 and external biasing is acceptable |
| PDTA123TE,115 | PNP complement with identical R1 value and SOT416 package; VECO = 50 V, IO = 100 mA | Used for high-side switching or inverted logic control where emitter connects to VCC | Select for complementary switching pairs or when sourcing current is required instead of sinking |
Compared with BC847B,115, PDTC123TE reduces component count and layout complexity; compared with PDTA123TE,115, it provides NPN polarity for standard low-side switching - enabling direct replacement in logic-driven sink configurations without circuit redesign.
Availability
PDTC123TE is available at Aetrix Electronics and suitable for logic-level signal switching, microcontroller GPIO load control, board-level power sequencing, and digital input conditioning requiring stable component supply and long-term production continuity.
Supply support for PDTC123TE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The PDTC123TE belongs to Nexperia's Resistor-Equipped Transistor (RET) family, engineered to replace discrete BJT + resistor combinations in digital switching applications - prioritizing space savings, assembly efficiency, and consistent biasing.
FAQ
What is the package type and footprint of PDTC123TE?
PDTC123TE uses the SOT416 (SC-75) package: a 3-lead surface-mount outline measuring 1.75 × 0.95 × 0.7 mm with 0.9 mm lead pitch. Its pin 1 is base input, pin 2 is emitter (GND), and pin 3 is collector output - compatible with standard reflow soldering processes and high-density PCB layouts.
Does PDTC123TE have an integrated pull-down resistor (R2)?
No, PDTC123TE has only one integrated bias resistor: R1 = 2.2 kΩ (1.54–2.86 kΩ) between base and input. R2 is open, meaning no internal base-emitter resistor is present - making it suitable for applications requiring strict control over base bias without unintended leakage paths.
What is the maximum continuous collector current for PDTC123TE?
The PDTC123TE supports a maximum continuous output current (IO) of 100 mA under normal operating conditions. This rating applies with ambient temperature ≤25 °C and proper PCB thermal management; derating is required above that temperature per its 833 K/W thermal resistance.
Can PDTC123TE replace BC847 series transistors directly?
PDTC123TE serves as a cost-saving alternative to BC847 series in digital switching applications but is not pin-compatible. It integrates R1, so external base resistors become unnecessary - requiring minor schematic updates but reducing component count and improving consistency in production builds.
What is the typical VCEsat of PDTC123TE and under what conditions is it specified?
The PDTC123TE has a maximum VCEsat of 150 mV, measured at IC = 10 mA and IB = 0.5 mA with Tamb = 25 °C. This low saturation voltage ensures minimal power dissipation during on-state operation, supporting energy-efficient digital interface and load-switching functions.
PDTC123TE,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
PDTC123TE,115 FAQ
1.How can I place an order for PDTC123TE,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTC123TE,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTC123TE,115 reliable?
The price and inventory of PDTC123TE,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC123TE,115 is usually 5 days.
3.What payment methods are accepted for PDTC123TE,115?
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PDTC123TE,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTC123TE,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTC123TE,115?
For technical support, including PDTC123TE,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC123TE,115 requirements.
6.How does Aetrix verify that PDTC123TE,115 is sourced from the original manufacturer or authorized distributors?
All PDTC123TE,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC123TE,115 meets industry standards.
7.What is the process for return or replacement of PDTC123TE,115?
All PDTC123TE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC123TE,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTC123TE,115 part is unused and in its original packaging.
Return procedure for PDTC123TE,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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