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Nexperia USA Inc. PDTC123YQBZ

Part No.:
PDTC123YQBZ
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
Package:
3-XDFN Exposed Pad
Datasheet:
AetrixPDTC123YQBZ.pdf
Description:
PDTC123YQB/SOT8015/DFN1110D-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,513

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Product details

Overview

PDTC123YQB from Nexperia is a 50 V, 100 mA NPN resistor-equipped transistor (RET) in a DFN1110D-3 (SOT8015) leadless package with side-wettable flanks, featuring integrated bias resistors R1 = 2.2 kΩ and R2 = 10 kΩ. It functions as a single-stage digital switch for IC input control and low-power load switching in space-constrained PCB designs.

For engineers reviewing the PDTC123YQB datasheet, PDTC123YQB pinout, PDTC123YQB application, or PDTC123YQB equivalent, this device serves as a drop-in replacement for BC847-based digital interface circuits where reduced BOM count, AOI-compatible solder joints, and sub-0.5 mm profile are critical selection criteria.

Technical Context

This RET integrates an NPN transistor with two monolithically embedded silicon resistors - R1 connected between base and input terminal, R2 between base and emitter - enabling direct logic-level drive without external bias components. Its operation is defined by VI(on) ≤ 1.15 V at IC = 20 mA and VI(off) ≥ 0.75 V at IC = 100 µA, ensuring clean digital threshold behavior.

The device exhibits hFE ≥ 35 at IC = 5 mA and VCE = 5 V, with VCE(sat) ≤ 150 mV under IC = 10 mA / IB = 0.5 mA conditions. Thermal resistance Rth(j-a) is 298 K/W on 70 µm copper FR4, supporting continuous 100 mA operation within ambient temperatures up to +125 °C when properly mounted.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating range for 3.3 V/5 V logic-controlled loads.
IO 100 mA - Continuous DC output current capability; sufficient for driving LEDs, small relays, or logic inputs without derating.
R1 2.2 kΩ - Input bias resistor value; sets base current for predictable turn-on with standard CMOS/TTL logic outputs.
R2/R1 ratio 4.5 (typ) - Ensures stable saturation and prevents unintended conduction due to leakage; improves noise immunity over discrete bias networks.
VCE(sat) ≤150 mV - Low saturation voltage minimizes power loss and self-heating during switching; enables efficient use in battery-powered systems.
fT 230 MHz - Transition frequency of internal transistor; supports reliable switching up to ~10–20 MHz digital signals.
Package DFN1110D-3 (SOT8015) - 1.1 mm × 1.0 mm × 0.48 mm ultra-thin leadless package with side-wettable flanks for automated optical inspection (AOI) of solder joints.

Pinout & Package

PDTC123YQB uses the DFN1110D-3 (SOT8015) surface-mount package: 3-terminal, leadless, 0.65 mm pitch, 0.48 mm body height, with side-wettable flanks for solder joint inspection. Dimensions: 1.1 mm × 1.0 mm × 0.48 mm.

Pin/Terminal Circuit Role Design Meaning
1 (I) Input (base node) Logic-level input terminal connected internally to R1; accepts 0–12 V drive; no external base resistor required.
2 (GND) Ground (emitter node) Emitting terminal tied to system ground; also connects internally to R2; serves as common reference for input and output paths.
3 (O) Output (collector node) Switched high-side output terminal; sinks up to 100 mA to GND when active; connects to load between supply and this pin.

Key Features

Feature Design Value
Integrated bias network R1 = 2.2 kΩ + R2 = 10 kΩ eliminates need for two external resistors, reducing layout area and assembly steps.
Side-wettable flanks Enables automated optical inspection (AOI) of solder fillets on all three terminals, improving manufacturing yield and field reliability.
Ultra-low profile 0.48 mm max height allows use in ultra-thin consumer and wearable electronics where Z-height is constrained.
Digital switching optimization VI(on) ≤ 1.15 V and VI(off) ≥ 0.75 V provide robust noise margin against 3.3 V logic thresholds, preventing false triggering.
Thermal performance Rth(j-a) = 298 K/W on 70 µm FR4 enables full 100 mA current at +125 °C ambient without forced cooling or derating.

Applications

LED Indicator Control Microcontroller GPIO Expansion

Use Scenario: Driving status LEDs from low-current MCU GPIO pins unable to source/sink >10 mA directly.

IC Role / Device Role / Timing Role: Single-stage current-sinking switch interfacing 3.3 V microcontroller outputs to 5 V LED strings.

Use Value: Eliminates need for discrete base resistor and pull-down, reduces PCB area by 2.5 mm² per channel, and ensures consistent brightness across batches via matched R1/R2 ratio.

Use Scenario: Expanding limited GPIO count on ARM Cortex-M0+ MCUs for peripheral enable/disable control.

IC Role / Device Role / Timing Role: Level-shifting and current-boosting buffer for enabling/disabling sensors, displays, or communication modules.

Use Value: Enables reliable 100 mA switching at <150 mV saturation drop, minimizing voltage loss in power path and preserving sensor accuracy.

Industrial I/O Module Inputs USB-C Power Path Control

Use Scenario: Converting 24 V industrial logic signals to 3.3 V MCU-compatible levels using resistor-divider + RET configuration.

IC Role / Device Role / Timing Role: Input conditioning stage with built-in hysteresis and ESD-tolerant input (VI = −5 to +12 V).

Use Value: Reduces component count by 3 parts per channel versus discrete BJT + dual-resistor solution, lowering BOM cost by $0.018/unit at volume.

Use Scenario: Controlling VBUS enable/disable in USB-C sink applications requiring fast, low-loss power switching.

IC Role / Device Role / Timing Role: Low-side load switch managing power delivery negotiation handshaking and fault isolation.

Use Value: Supports 100 mA auxiliary power path with <150 mV dropout, meeting USB PD 3.1 specification for always-on monitoring circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847B,115 Discrete NPN BJT with no integrated resistors; requires external RB and RBE; hFE = 200–450 (higher gain but less predictable switching threshold). Used where adjustable bias or analog amplification is needed; unsuitable for direct logic-level drive without design effort. Select when gain variability is acceptable and board space permits two extra 0402 resistors; avoid if AOI or miniaturization is required.
PDTA123YQB PNP complement with identical R1/R2 values and package; VECO = 50 V, IO = −100 mA; shares same footprint and marking compatibility. Used for high-side switching or inverted logic interfaces; not interchangeable in NPN-configured circuits without schematic revision. Select only for complementary high-side control; pinout is mirrored (I/GND/O → O/GND/I), requiring layout adaptation.

Compared with BC847B and PDTA123YQB, PDTC123YQB uniquely delivers fixed, factory-matched biasing in a 1.1 mm × 1.0 mm AOI-capable package-enabling zero-resistor digital switching while maintaining thermal and electrical consistency across production lots.

Availability

PDTC123YQB is available at Aetrix Electronics and suitable for LED indicator control, microcontroller GPIO expansion, and industrial I/O module inputs requiring stable component supply and consistent parametric performance across manufacturing batches.

Supply support for PDTC123YQB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient logic, discrete, and MOSFET devices, with manufacturing rooted in process technology leadership and automotive-grade quality standards.

PDTC123YQB belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete BJT + resistor combinations in digital interface and load-switching applications while improving manufacturability and reliability.

FAQ

What is the maximum input voltage rating for PDTC123YQB?

The absolute maximum input voltage (VI) is −5 V to +12 V, verified per datasheet Table 5. This rating applies across the full operating temperature range (−55 °C to +150 °C) and ensures safe operation when driven by 3.3 V, 5 V, or 12 V logic sources, including transient overshoots during hot-plug events.

Can PDTC123YQB be used in linear amplifier configurations?

No - PDTC123YQB is optimized for digital switching, not analog amplification. Its integrated R1/R2 network fixes the base bias point, eliminating external adjustment. The hFE minimum of 35 is specified only at IC = 5 mA and VCE = 5 V, and no small-signal parameters (e.g., gm, fT vs. bias) are guaranteed outside switching conditions.

Is PDTC123YQB qualified for automotive applications?

No - PDTC123YQB is not AEC-Q200 qualified. The datasheet explicitly states it is a non-automotive qualified product, with no testing performed to automotive temperature, vibration, or reliability standards. Use in automotive systems requires formal qualification by the end customer and carries full liability assumption.

What reflow profile should be used for DFN1110D-3 mounting?

Reflow must follow JEDEC J-STD-020 moisture sensitivity level 1 requirements. Peak temperature shall not exceed 260 °C for ≤30 seconds, with ramp-up rate ≤3 °C/s and ramp-down rate ≤6 °C/s. Recommended stencil thickness is 0.1 mm, and solder paste volume is calibrated for the 0.34 mm × 0.34 mm land pattern shown in Figure 12 of the datasheet.

PDTC123YQBZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-XDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
2.2 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
230 MHz
Power - Max:
340 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
DFN1110D-3

PDTC123YQBZ FAQ

1.How can I place an order for PDTC123YQBZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTC123YQBZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTC123YQBZ reliable?

The price and inventory of PDTC123YQBZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC123YQBZ is usually 5 days.

3.What payment methods are accepted for PDTC123YQBZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC123YQBZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTC123YQBZ?

PDTC123YQBZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTC123YQBZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTC123YQBZ?

For technical support, including PDTC123YQBZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC123YQBZ requirements.

6.How does Aetrix verify that PDTC123YQBZ is sourced from the original manufacturer or authorized distributors?

All PDTC123YQBZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC123YQBZ meets industry standards.

7.What is the process for return or replacement of PDTC123YQBZ?

All PDTC123YQBZ units undergo pre-shipment inspection (PSI). If there is an issue with PDTC123YQBZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTC123YQBZ part is unused and in its original packaging.

Return procedure for PDTC123YQBZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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