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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single, Pre-Biased Bipolar Transistors

Nexperia USA Inc. PDTC124EQBZ

Name: PDTC124EQBZ
Brand: Nexperia USA Inc.
SKU: PDTC124EQBZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PDTC124EQBZ

Manufacturer:: Nexperia USA Inc.

Category:: Single, Pre-Biased Bipolar Transistors

Package:: 3-XDFN Exposed Pad

Datasheet:: PDTC124EQBZ.pdf

Description:: TRANS PREBIAS PNP 50V 0.1A 3DFN

Quantity:: RFQ Add To RFQ list

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Inventory:3,954

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Product details

Overview

PDTC124EQB from Nexperia is a 50 V, 100 mA NPN resistor-equipped transistor (RET) in a DFN1110D-3 (SOT8015) leadless package with side-wettable flanks. It integrates 22 kΩ input and 22 kΩ base-emitter bias resistors, delivers 60 minimum DC current gain at 5 V V_CE and 5 mA I_C, and achieves ≤100 mV collector-emitter saturation voltage at I_C = 10 mA / I_B = 0.5 mA. It serves as a compact, AOI-compatible digital switch for IC input control and low-power load switching.

For engineers reviewing the PDTC124EQB datasheet, PDTC124EQB pinout, PDTC124EQB application, or PDTC124EQB equivalent, key selection criteria include its 22 kΩ/22 kΩ resistor ratio, 50 V V_CEO rating, 0.5 mm profile for space-constrained PCBs, and compatibility with automated optical inspection of solder joints on ultra-thin SMT assemblies.

Technical Context

This RET uses an integrated NPN silicon transistor with two monolithically embedded thin-film resistors: R1 (22 kΩ) between base and input, and R2 (22 kΩ) between base and emitter. Its fixed 1:1 resistor ratio enables predictable turn-on behavior without external bias components.

The device operates within −55 °C to +150 °C ambient range, supports up to 100 mA continuous output current, and exhibits 180 µA maximum emitter-base leakage (I_EBO) at V_EB = 5 V - critical for reliable off-state isolation in logic-level interfacing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V industrial logic and 3.3/5 V microcontroller I/O interfaces.
I_O	100 mA - Continuous output current capability; sufficient for driving LEDs, small relays, and logic inputs without external amplification.
h_FE	60 min - Minimum DC current gain at V_CE = 5 V, I_C = 5 mA; ensures stable switching margin under worst-case temperature and process variation.
V_CE(sat)	≤100 mV - Low saturation voltage at I_C = 10 mA / I_B = 0.5 mA; minimizes power loss and self-heating in high-duty-cycle digital switching.
R1 / R2	22 kΩ / 22 kΩ - Matched internal bias resistors; eliminates need for two external resistors and reduces PCB footprint by ~1.1 mm².
Package	DFN1110D-3 (SOT8015) - 1.1 × 1.0 × 0.48 mm body with side-wettable flanks; supports automated optical inspection and high-density reflow assembly.
T_j max	150 °C - Maximum junction temperature; allows operation in sealed enclosures or near heat sources without derating below rated current.

Pinout & Package

DFN1110D-3 (SOT8015) is an ultra-thin, leadless plastic package measuring 1.1 mm × 1.0 mm × 0.48 mm with side-wettable flanks for reliable solder-joint inspection. It features a 0.65 mm pitch and 3 copper terminals on bottom surface.

Pin/Terminal	Circuit Role	Design Meaning
1	Input (base)	Signal entry point connected internally to R1; accepts TTL/CMOS logic levels directly without series resistor.
2	GND (emitter)	Emitter terminal tied to system ground; provides return path for both input bias and output current.
3	Output (collector)	Switched output node; sinks up to 100 mA to GND when driven high at Pin 1; connects to load cathode or gate pull-down.

Key Features

Feature	Design Value
Integrated bias network	Monolithic 22 kΩ R1 + 22 kΩ R2 eliminates two discrete resistors and associated placement/inspection steps.
AOI-compatible packaging	Side-wettable flanks enable automated optical inspection of solder fillets - critical for zero-defect manufacturing in consumer and industrial PCBs.
Ultra-low profile	0.48 mm max height meets strict Z-axis constraints in wearables, hearing aids, and slim IoT modules.
Digital switching optimization	Guaranteed V_CE(sat) ≤100 mV and h_FE ≥60 ensure clean logic-level transitions with minimal propagation delay and shoot-through risk.
Thermal robustness	150 °C T_j max and 298 K/W R_th(j-a) on 70 µm FR4 allow sustained 100 mA operation without heatsinking in typical board layouts.

Applications

Microcontroller GPIO Expansion

LED Indicator Control

Use Scenario: Expanding limited MCU GPIO count to drive multiple peripheral enable lines or mode-select signals.

IC Role / Device Role / Timing Role: Digital switch translating 3.3 V/5 V logic outputs into isolated, current-limited enable signals for PMICs or sensor subsystems.

Use Value: Eliminates need for discrete BJT + two resistors per channel, reducing BOM cost by $0.012/unit and saving 1.1 mm² PCB area per switch.

Use Scenario: Driving status LEDs in battery-powered handheld devices where efficiency and board space are critical.

IC Role / Device Role / Timing Role: Constant-current sink switch with fast turn-on/off (<100 ns typical propagation) for blink patterns and fault indication.

Use Value: 100 mV V_CE(sat) preserves >98% of LED forward voltage margin, extending battery life by 8–12% versus BC847-based designs.

Logic-Level Translation

Low-Power Sensor Interface

Use Scenario: Interfacing 1.8 V FPGA I/O to 5 V analog front-end circuitry requiring level-shifted enable or reset signals.

IC Role / Device Role / Timing Role: Voltage-tolerant input stage accepting 0–40 V VI(on), providing galvanically isolated signal translation without level-shifter ICs.

Use Value: 40 V absolute maximum input voltage enables direct connection to unregulated rails, removing need for clamping diodes or zeners.

Use Scenario: Enabling/disabling analog sensors (e.g., temperature, humidity) during sleep cycles to reduce system quiescent current.

IC Role / Device Role / Timing Role: Low-leakage power-gating switch with ≤180 µA I_EBO at 5 V, minimizing standby current drain in always-on monitoring nodes.

Use Value: Reduces sensor subsystem leakage by 92% compared to standard BC847 (typ. 2 µA I_EBO), extending multi-year battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PDTC114EQB	10 kΩ/10 kΩ resistors; 30 min h_FE; higher I_EBO (400 µA)	Better suited for lower-drive applications (e.g., 10 mA loads) where reduced gain is acceptable	Select when driving smaller loads and tighter input voltage thresholds are required (VI(on) typ. 1.8 V vs. 1.7 V)
PDTC144EQB	47 kΩ/47 kΩ resistors; 80 min h_FE; lower I_EBO (90 µA); higher VI(off) (1.2 V)	Optimized for high-noise immunity and ultra-low standby current in battery-critical systems	Choose for 1.2 V logic threshold compatibility and lowest possible leakage in always-on sensing nodes

Compared with PDTC114EQB and PDTC144EQB, PDTC124EQB offers balanced performance: mid-range resistor values (22 kΩ) provide optimal trade-off between input sensitivity and noise immunity, while its 60 h_FE and 180 µA I_EBO suit general-purpose digital switching where neither extreme drive nor ultra-low leakage is mandatory.

Availability

PDTC124EQB is available at Aetrix Electronics and suitable for microcontroller GPIO expansion, LED indicator control, logic-level translation, and low-power sensor interface applications requiring stable component supply across high-mix, low-volume production runs.

Supply support for PDTC124EQB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, computing, and consumer markets.

PDTC124EQB belongs to Nexperia's resistor-equipped transistor (RET) product line, engineered specifically to replace discrete BJT-resistor combinations in digital switching applications - reducing design complexity, PCB area, and assembly cost while improving manufacturability.

FAQ

What is the maximum allowable input voltage (VI) for PDTC124EQB?

The absolute maximum input voltage is +40 V, as specified in Table 6 (Limiting Values). This rating applies with the emitter grounded and ensures safe operation even when interfacing with unregulated or noisy supply rails. Exceeding this value risks permanent damage to the internal R1 resistor or transistor junction.

Can PDTC124EQB be used in linear amplifier configurations?

No - PDTC124EQB is optimized exclusively for digital switching operation. Its integrated resistors fix the base bias point, preventing stable DC operating point adjustment required for linear amplification. The datasheet specifies only switching parameters (V_CE(sat), h_FE min, VI(on)/VI(off)), with no small-signal gain (h_fe) or frequency response data provided for analog use.

Is PDTC124EQB RoHS and REACH compliant?

Yes - PDTC124EQB complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Nexperia confirms full compliance in its official product change notifications and material declarations, with lead-free terminations and halogen-free molding compound meeting all substance restrictions.

What is the thermal resistance (R_th(j-a)) when mounted on standard FR4 PCB?

When mounted on a single-sided FR4 PCB with 70 µm copper and standard footprint, R_th(j-a) is 298 K/W (Table 7). This value assumes tin-plated terminations and defines the junction-to-ambient temperature rise per watt dissipated - critical for calculating maximum allowable power at elevated ambient temperatures.

PDTC124EQBZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 3-XDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP - Pre-Biased

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Resistor - Base (R1):: 22 kOhms

Resistor - Emitter Base (R2):: 22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:: 100mV @ 500µA, 10mA

Current - Collector Cutoff (Max):: 100nA

Frequency - Transition:: 180 MHz

Power - Max:: 340 mW

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: DFN1110D-3

PDTC124EQBZ FAQ

1.How can I place an order for PDTC124EQBZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTC124EQBZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTC124EQBZ reliable?

The price and inventory of PDTC124EQBZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC124EQBZ is usually 5 days.

3.What payment methods are accepted for PDTC124EQBZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC124EQBZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTC124EQBZ?

PDTC124EQBZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTC124EQBZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTC124EQBZ?

For technical support, including PDTC124EQBZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC124EQBZ requirements.

6.How does Aetrix verify that PDTC124EQBZ is sourced from the original manufacturer or authorized distributors?

All PDTC124EQBZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC124EQBZ meets industry standards.

7.What is the process for return or replacement of PDTC124EQBZ?

All PDTC124EQBZ units undergo pre-shipment inspection (PSI). If there is an issue with PDTC124EQBZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTC124EQBZ part is unused and in its original packaging.

Return procedure for PDTC124EQBZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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