Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors PDTC124TE,115

Part No.:
PDTC124TE,115
Manufacturer:
NXP Semiconductors
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SC-75, SOT-416
Datasheet:
AetrixPDTC124TE,115.pdf
Description:
TRANS PREBIAS NPN 50V 0.1A SC75
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,162

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PDTC124TE from NXP Semiconductors (formerly Philips) is an NPN resistor-equipped transistor with integrated 22 kΩ base bias resistor (R1) and open R2, rated for 50 V VCEO, 100 mA IO, and 150 mV VCEsat at IC = 10 mA / IB = 0.5 mA - used in compact logic-level switching circuits such as microcontroller GPIO drivers and LED interface stages.

For engineers reviewing the PDTC124TE datasheet, PDTC124TE pinout, PDTC124TE application, or PDTC124TE equivalent, this page delivers verified package mapping (SOT416/SC-75), confirmed pin assignment (Base–Emitter–Collector), thermal resistance (833 K/W), and two validated alternative parts with documented functional and layout differences.

Technical Context

This device integrates a single NPN bipolar junction transistor with a monolithic 22 kΩ pull-up base resistor (R1) and no internal R2 connection - enabling direct logic-level drive without external bias components. It operates with VCEO = 50 V and supports DC output current up to 100 mA.

Designed for surface-mount use in SOT416 (SC-75) package, it features VCEsat ≤ 150 mV at IC = 10 mA and exhibits hFE ≥ 100 at VCE = 5 V / IC = 1 mA, making it suitable for low-power digital switching where board space and BOM count are constrained.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50 V maximum collector-emitter voltage - supports rail-to-rail switching in 3.3 V and 5 V logic systems with margin.
IO 100 mA maximum DC output current - sufficient for driving LEDs, small relays, or logic gates directly.
R1 22 kΩ ±30 % integrated base bias resistor - eliminates need for external pull-up, reducing component count by one.
VCEsat ≤150 mV at IC = 10 mA / IB = 0.5 mA - ensures low conduction loss and minimal self-heating in active switching.
hFE ≥100 at VCE = 5 V / IC = 1 mA - guarantees reliable saturation under typical microcontroller GPIO drive conditions.
Ptot 150 mW at Tamb ≤ 25 °C (SOT416) - defines thermal derating envelope for continuous operation on standard FR4 PCBs.
Rth(j-a) 833 K/W in free air - indicates thermal limitation requiring careful power budgeting in high-duty-cycle applications.

Pinout & Package

PDTC124TE is housed in a plastic surface-mounted SOT416 (SC-75) package measuring 1.7 × 0.95 × 0.5 mm, with gull-wing leads and 0.95 mm lead pitch. The package supports reflow soldering only and is rated for operating ambient temperature from −65 °C to +150 °C.

Pin Circuit Role Design Meaning
1 Base Input node connected internally to 22 kΩ resistor (R1); accepts TTL/CMOS logic levels directly.
2 Emitter Common reference terminal; tied to ground or low-side return path in switch configurations.
3 Collector Output node sourcing current to load; connects to VCC-side of LED, relay coil, or gate driver.

Key Features

Feature Design Value
Integrated R1 bias resistor 22 kΩ monolithic resistor eliminates discrete pull-up, reducing footprint and assembly steps.
Low VCEsat ≤150 mV enables efficient switching with <15 mW conduction loss at 100 mA, minimizing heat generation.
High hFE Minimum 100 gain ensures full saturation using ≤0.5 mA base drive - compatible with weak GPIO outputs.
SOT416 ultra-small footprint 1.7 × 0.95 mm body area saves >60 % board space vs. SOT23, critical for wearables and sensor nodes.

Applications

Microcontroller GPIO Driver LED Indicator Interface

Use Scenario: Driving discrete LEDs or optocouplers from 3.3 V or 5 V MCU pins with limited sink/source capability.

IC Role / Device Role / Timing Role: Low-side switch controlling current flow through LED anode to VCC.

Use Value: Eliminates need for external base resistor; VCEsat ≤ 150 mV preserves >3.15 V forward drop across red/green LEDs at 20 mA.

Use Scenario: Status indication in battery-powered IoT sensors where PCB area and BOM cost are tightly constrained.

IC Role / Device Role / Timing Role: Digital on/off switch enabling or disabling LED current path based on firmware state.

Use Value: SOT416 package occupies 1.6 mm² - 40 % smaller than SOT23 - while maintaining 100 mA drive capability.

Logic-Level Signal Inverter Small-Signal Load Switch

Use Scenario: Converting active-high control signals to active-low outputs for legacy peripherals or level-shifting interfaces.

IC Role / Device Role / Timing Role: Inverting amplifier stage with grounded emitter and collector-loaded output.

Use Value: hFE ≥ 100 ensures clean inversion with <1 µs propagation delay under 10 mA load, supporting 1 MHz toggle rates.

Use Scenario: Enabling/disabling power to auxiliary circuitry (e.g., sensor bias, RF front-end) in portable medical devices.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlled by system PMIC or MCU.

Use Value: 50 V VCEO rating allows safe operation across 3.3 V, 5 V, and 12 V auxiliary rails without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PDTC114TE,115 10 kΩ R1 instead of 22 kΩ; otherwise identical SOT416 package and pinout. Higher base current draw (≈0.33 mA vs. 0.15 mA at 3.3 V), better suited for weaker drive sources needing faster turn-on. Select when faster switching or lower VBE threshold margin is required; verify GPIO current compliance.
MMBT3904LT1G Standard NPN BJT (no built-in resistors); requires external 22 kΩ base resistor; SOT23-3 package. Larger footprint (2.9 × 1.3 mm vs. 1.7 × 0.95 mm) and +1 component in BOM, but wider hFE range (100–300). Choose when design flexibility or higher gain variability is prioritized over miniaturization and BOM reduction.

Compared with PDTC124TE, PDTC114TE offers lower input impedance for improved drive margin at the cost of higher base current, while MMBT3904LT1G provides broader gain tolerance and established supply chain at the expense of board area and assembly complexity.

Availability

PDTC124TE is available at Aetrix Electronics and suitable for microcontroller interface, LED driver, and logic-level inverter applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PDTC124TE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, headquartered in Eindhoven, Netherlands, designs high-performance analog, logic, and interface semiconductors for automotive, industrial, and consumer markets.

The PDTC124TE belongs to NXP's resistor-equipped transistor (RET) product line, engineered specifically to reduce discrete BOM count and simplify PCB layout in space-constrained digital interface circuits.

FAQ

What is the exact package type and dimensions of PDTC124TE?

PDTC124TE uses the SOT416 (SC-75) package: a plastic surface-mounted 3-lead outline measuring 1.7 mm × 0.95 mm × 0.5 mm with 0.95 mm lead pitch. Its gull-wing leads are designed exclusively for reflow soldering per Philips' 2004 specification, and mechanical drawings confirm pin 1 = Base, pin 2 = Emitter, pin 3 = Collector.

Does PDTC124TE have an internal pull-down resistor (R2)?

No - PDTC124TE has R2 = open, meaning only the 22 kΩ pull-up base resistor (R1) is integrated. This configuration supports standard low-side switching where the base is driven high to turn on the transistor. No internal R2 exists, so external pull-down is required only if active-low enable logic or noise immunity demands it.

What is the maximum continuous collector current for PDTC124TE?

The absolute maximum DC output current (IO) for PDTC124TE is 100 mA, as specified in the Quick Reference Data and Limiting Values tables. This rating applies at Tamb ≤ 25 °C with proper PCB thermal relief; derating is required above 25 °C ambient, especially given its 833 K/W junction-to-ambient thermal resistance in free air.

Can PDTC124TE replace a standard 2N3904 in existing designs?

PDTC124TE is not a direct replacement for 2N3904 due to its integrated 22 kΩ base resistor and different pinout (SOT416 vs. TO-92). While both are NPN transistors, PDTC124TE requires no external bias resistor but mandates matching SOT416 footprint and layout. Use only after verifying drive voltage compatibility and thermal constraints in the target application.

What is the guaranteed DC current gain (hFE) of PDTC124TE at typical operating conditions?

PDTC124TE guarantees hFE ≥ 100 at VCE = 5 V and IC = 1 mA, as stated in the Characteristics table. This minimum gain ensures reliable saturation with ≤0.5 mA base current - sufficient for most 3.3 V and 5 V microcontroller GPIO outputs. The device does not specify upper hFE limit, consistent with RET family characterization.

PDTC124TE,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SC-75, SOT-416
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
22 kOhms
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
-
Power - Max:
150 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-75

PDTC124TE,115 FAQ

1.How can I place an order for PDTC124TE,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTC124TE,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTC124TE,115 reliable?

The price and inventory of PDTC124TE,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC124TE,115 is usually 5 days.

3.What payment methods are accepted for PDTC124TE,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC124TE,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTC124TE,115?

PDTC124TE,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTC124TE,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTC124TE,115?

For technical support, including PDTC124TE,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC124TE,115 requirements.

6.How does Aetrix verify that PDTC124TE,115 is sourced from the original manufacturer or authorized distributors?

All PDTC124TE,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC124TE,115 meets industry standards.

7.What is the process for return or replacement of PDTC124TE,115?

All PDTC124TE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC124TE,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTC124TE,115 part is unused and in its original packaging.

Return procedure for PDTC124TE,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PDTC124TE,115 Tags

  • PDTC124TE,115
  • PDTC124TE,115 PDF
  • PDTC124TE,115 Datasheet
  • PDTC124TE,115 Specifications
  • PDTC124TE,115 Images
  • NXP Semiconductors
  • NXP Semiconductors PDTC124TE,115
  • Buy PDTC124TE,115
  • PDTC124TE,115 Price
  • PDTC124TE,115 Distributor
  • PDTC124TE,115 Supplier
  • PDTC124TE,115 Wholesale
Related Products
MUN5211T1G
MUN5211T1G

onsemi

DTC043ZEBTL
DTC043ZEBTL

Rohm Semiconductor

DTC114EKAT146
DTC114EKAT146

Rohm Semiconductor

DDTD113ZC-7-F
DDTD113ZC-7-F

Diodes Incorporated

DRDNB16W-7
DRDNB16W-7

Diodes Incorporated

PDTC114ET,215
PDTC114ET,215

Nexperia USA Inc.

PDTC143ZT,215
PDTC143ZT,215

Nexperia USA Inc.

PDTC143ET,215
PDTC143ET,215

Nexperia USA Inc.

PDTC143XT,215
PDTC143XT,215

Nexperia USA Inc.

MMUN2211LT1G
MMUN2211LT1G

onsemi

PDTC144ET,215
PDTC144ET,215

Nexperia USA Inc.

PDTC124ET,215
PDTC124ET,215

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER