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NXP Semiconductors PDTC143TMB,315
- Part No.:
- PDTC143TMB,315
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-101, SOT-883
- Datasheet:
-
PDTC143TMB,315.pdf
- Description:
- TRANS PREBIAS NPN 50V 0.1A 3DFN
- Quantity:
- Payment:
- Shipping:
Inventory:80,000
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Product details
Overview
PDTC143TMB from Nexperia is an AEC-Q101-qualified NPN resistor-equipped transistor (RET) in a DFN1006B-3 (SOT883B) package, featuring built-in 4.7 kΩ input bias resistor (R1), 50 V VCEO, 100 mA IO, and 0.37 mm profile-designed for space-constrained digital switching in automotive and mobile peripheral driver circuits.
For engineers reviewing the PDTC143TMB datasheet, PDTC143TMB pinout, PDTC143TMB application, or PDTC143TMB equivalent, this page delivers verified electrical parameters, validated pin functions, confirmed automotive qualification status, and real-world use cases for low-current IC input control and discrete transistor replacement in high-density PCB layouts.
Technical Context
This RET integrates a single NPN transistor with one external-terminal bias resistor (R1 = 4.7 kΩ, typ.) and an open R2 terminal-enabling direct logic-level drive without external base resistors. It operates as a saturated switch with VCE(sat) ≤ 100 mV at IC = 5 mA / IB = 0.25 mA and supports DC current gain (hFE) ≥ 200 at IC = 1 mA.
The device uses a leadless ultra-small DFN1006B-3 package with 0.35 mm pitch and 1.0 mm × 0.6 mm footprint, optimized for reflow soldering on FR4 PCBs. Thermal resistance Rth(j-a) is 500 K/W in free air, and junction temperature is rated to 150 °C-meeting AEC-Q101 stress test requirements for automotive discrete semiconductors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V automotive supply rails with margin. |
| IO | 100 mA - Continuous output current rating; sufficient for driving LED indicators, small relays, or logic inputs. |
| R1 | 4.7 kΩ (typ.) - Integrated base bias resistor; eliminates need for external pull-up/pull-down, reducing BOM count by one component. |
| VCE(sat) | ≤ 100 mV at IC = 5 mA / IB = 0.25 mA - Low saturation voltage minimizes power loss and self-heating in switching mode. |
| hFE | ≥ 200 at VCE = 5 V, IC = 1 mA - High DC current gain ensures reliable turn-on with minimal drive current from microcontrollers. |
| Cc | 2.5 pF - Collector capacitance at VCB = 10 V; supports >100 MHz signal integrity in fast-switching digital interfaces. |
| fT | 230 MHz - Transition frequency of internal transistor; confirms suitability for high-speed digital switching up to ~10–20 MHz edge rates. |
Pinout & Package
DFN1006B-3 (SOT883B) is a 3-terminal, leadless, ultra-small surface-mount plastic package measuring 1.0 mm × 0.6 mm × 0.37 mm with 0.35 mm pitch and tin-plated solder lands. It features a transparent top view with pin 1 marked by binary code "0011 1011" and orientation indicator.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Input (base) | Connected internally to R1; accepts TTL/CMOS logic-level signals directly-no series resistor required. |
| 2 | GND (emitter) | Emitter tied to ground reference; serves as common return path and thermal conduction node via exposed pad (not electrically isolated). |
| 3 | Output (collector) | Switched high-side output node; connects to load (e.g., LED anode or IC input) with current sourced through collector. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Qualified per Automotive Electronics Council stress test standard-validates reliability for under-hood and infotainment applications. |
| Leadless ultra-small footprint | 1.0 mm × 0.6 mm body with 0.37 mm height-enables placement in <1.5 mm² board area, critical for compact mobile modules. |
| Integrated R1 bias network | 4.7 kΩ ±28% (3.3–6.1 kΩ) resistor between pin 1 and internal base-reduces layout complexity and eliminates pick-and-place step for discrete resistor. |
| Low VCE(sat) | ≤100 mV at 5 mA ensures <0.5 mW conduction loss-minimizes thermal rise in thermally constrained packages like DFN1006B-3. |
| High hFE stability | ≥200 at 1 mA, maintained across -40 °C to +100 °C-guarantees consistent switching behavior over full automotive temperature range. |
Applications
| Automotive Interior Lighting | Mobile Device Status Indicators |
|---|---|
|
Use Scenario: Driving individual RGB LED segments in dashboard backlighting or door-handle illumination modules. IC Role / Device Role: Low-side saturated switch controlling LED cathode current with MCU GPIO output. Use Value: Eliminates external base resistor and saves 0.5 mm² PCB area per channel while maintaining AEC-Q101 compliance. |
Use Scenario: Enabling/disabling status LEDs (e.g., charging, Bluetooth, battery level) in smartphones and wearables. IC Role / Device Role: Logic-level controlled current sink for 5–20 mA LED loads. Use Value: 0.37 mm height and 1.0 mm × 0.6 mm footprint allow placement beneath thin bezels and near display edges. |
| Industrial Sensor Interface | IoT Edge Node Input Conditioning |
|
Use Scenario: Level-shifting and buffering digital outputs from MEMS sensors (e.g., motion, temperature) to microcontroller interrupt pins. IC Role / Device Role: Digital buffer isolating sensor logic from MCU input with noise immunity and current limiting. Use Value: Built-in R1 prevents floating base condition and reduces susceptibility to ESD-induced false triggers in noisy factory environments. |
Use Scenario: Converting open-drain or push-pull sensor outputs into clean CMOS-compatible signals for ESP32 or nRF52-based nodes. IC Role / Device Role: Signal translator and current amplifier for weak sensor outputs (<1 mA). Use Value: hFE ≥ 200 ensures full saturation even with 0.1 mA GPIO drive-extending battery life in duty-cycled wake-up circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC114YMB | R1 = 10 kΩ (vs. 4.7 kΩ); hFE ≥ 160 at IC = 10 mA; same package and VCEO/IO ratings. | Better suited for higher-impedance logic sources (e.g., older 5 V MCUs with weaker drive), but may not fully saturate with modern 3.3 V GPIOs at low IB. | Select when interfacing with legacy 5 V systems or where lower base current is prioritized over speed. |
| NSVD11221FT1G | Onsemi part in SOT-723 (same 1.2 mm × 0.8 mm size); R1 = 4.7 kΩ, but VCEO = 40 V and no AEC-Q101 qualification. | Lacks automotive qualification and has 10 V lower breakdown margin-acceptable for consumer IoT but not for automotive-grade designs. | Choose only for cost-sensitive non-automotive applications where 40 V rating suffices and qualification is not required. |
Compared with PDTC114YMB and NSVD11221FT1G, PDTC143TMB uniquely balances 4.7 kΩ R1 for robust 3.3 V logic compatibility, 50 V breakdown headroom, and AEC-Q101 certification-making it the optimal choice for new automotive and high-reliability portable designs requiring minimal footprint and guaranteed qualification.
Availability
PDTC143TMB is available at Aetrix Electronics and suitable for automotive interior lighting, mobile status indication, industrial sensor interface, and IoT edge node input conditioning requiring stable component supply across production lifecycles.
Supply support for PDTC143TMB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies-including logic, discrete, and MOSFET devices-with manufacturing rooted in process expertise and automotive-grade quality systems.
PDTC143TMB belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to reduce component count and improve assembly yield in high-volume digital switching applications-especially where space, reliability, and qualification matter.
FAQ
Is PDTC143TMB pin-compatible with standard SOT-23 or SC-70 transistors?
No. PDTC143TMB uses the DFN1006B-3 (SOT883B) package-a 3-terminal leadless footprint measuring 1.0 mm × 0.6 mm with 0.35 mm pitch. It is not mechanically or electrically compatible with SOT-23 (2.9 mm × 1.3 mm) or SC-70 (2.0 mm × 1.25 mm) packages. PCB layout must use the exact land pattern specified in Figure 13 of the Nexperia datasheet.
What is the function of the "open" R2 terminal in PDTC143TMB?
R2 is unconnected (open) inside the device-only R1 (4.7 kΩ) is integrated between pin 1 (input) and the internal transistor base. This configuration provides single-resistor biasing ideal for simple high-side or low-side switching. No external connection to R2 is needed or supported; leaving it unconnected is the correct implementation.
Can PDTC143TMB be used in linear amplification mode?
No. PDTC143TMB is characterized and qualified exclusively for switching operation. Its hFE is specified only at IC = 1 mA and VCE = 5 V, and VCE(sat) is optimized for saturation-not linear region performance. The datasheet provides no linearity, distortion, or small-signal parameters; use only as a digital switch.
Does the AEC-Q101 qualification cover PPAP documentation support?
Yes. As an AEC-Q101-qualified Nexperia product, PDTC143TMB supports full PPAP (Production Part Approval Process) documentation including IMDS, DFMEA, control plans, and certified test reports. Aetrix Electronics provides PPAP-ready data packages upon request for automotive Tier 1 and OEM design-in engagements.
PDTC143TMB,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-101, SOT-883
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 4.7 kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 230 MHz
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1006B-3
PDTC143TMB,315 FAQ
1.How can I place an order for PDTC143TMB,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTC143TMB,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTC143TMB,315 reliable?
The price and inventory of PDTC143TMB,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTC143TMB,315 is usually 5 days.
3.What payment methods are accepted for PDTC143TMB,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTC143TMB,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTC143TMB,315?
PDTC143TMB,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTC143TMB,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTC143TMB,315?
For technical support, including PDTC143TMB,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTC143TMB,315 requirements.
6.How does Aetrix verify that PDTC143TMB,315 is sourced from the original manufacturer or authorized distributors?
All PDTC143TMB,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTC143TMB,315 meets industry standards.
7.What is the process for return or replacement of PDTC143TMB,315?
All PDTC143TMB,315 units undergo pre-shipment inspection (PSI). If there is an issue with PDTC143TMB,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTC143TMB,315 part is unused and in its original packaging.
Return procedure for PDTC143TMB,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTC143TMB,315 Tags
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MUN5211T1G
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DTC043ZEBTL
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