Nexperia USA Inc. PDTC143XQB-QZ

Overview

PDTC143XQB-Q from Nexperia is a 50 V, 100 mA NPN resistor-equipped transistor (RET) in a leadless DFN1110D-3 (SOT8015) package with side-wettable flanks. It integrates 4.7 kΩ input bias resistor (R1) and 10 kΩ feedback resistor (R2), delivers 100 mA output current, exhibits 100 mV collector-emitter saturation voltage at IC = 10 mA/IB = 0.5 mA, and is AEC-Q101 qualified for automotive digital switching applications.

For engineers reviewing the PDTC143XQB-Q datasheet, PDTC143XQB-Q pinout, PDTC143XQB-Q application, or PDTC143XQB-Q equivalent, this RET simplifies load switching and IC input control by eliminating external base resistors, reducing PCB area and assembly cost in space-constrained automotive and industrial digital systems.

Technical Context

This NPN RET uses an integrated dual-resistor network to enable direct logic-level drive: R1 connects base to input, R2 connects base to emitter, forming a built-in voltage divider that ensures stable turn-on/turn-off behavior without external components. Its ultra-thin 0.48 mm profile and side-wettable flanks support AOI-compatible reflow soldering on high-density PCBs.

The device operates across −55 °C to +150 °C ambient, maintains hFE ≥ 50 at VCE = 5 V/IC = 10 mA, and achieves VI(on) = 1.5–2.5 V and VI(off) = 0.3–0.8 V - enabling reliable interfacing with 3.3 V and 5 V microcontrollers while suppressing false triggering in noisy environments.

Key Specifications

Pinout & Package

DFN1110D-3 (SOT8015) is a 3-terminal, leadless, ultra-thin surface-mount package with side-wettable flanks for reliable solder-joint inspection. Dimensions: 1.1 mm × 1.0 mm × 0.48 mm body height; 0.65 mm pitch; 0.22 mm max thickness at flanks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.

Compared with PDTC123JQB-Q, PDTC143XQB-Q provides faster switching and better drive compatibility with standard CMOS outputs; compared with BC847B-Q, it trades marginal VCE(sat) improvement for significant BOM and layout simplification in high-volume digital switching.

Availability

PDTC143XQB-Q is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC I/O expansion, consumer appliance control boards, and medical diagnostic equipment requiring stable component supply and AEC-Q101 assurance.

Supply support for PDTC143XQB-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

PDTC143XQB-Q belongs to Nexperia's AEC-Q101-qualified resistor-equipped transistor (RET) family, engineered specifically to replace discrete BJT + resistor combinations in automotive digital switching and interface applications.

FAQ

What is the maximum continuous collector current for PDTC143XQB-Q?

The maximum continuous collector current is 100 mA at Tamb ≤ 25 °C on a standard FR4 PCB with 70 µm copper. Derating applies above 25 °C: power dissipation drops linearly to zero at 150 °C junction temperature, per Figure 1 in the datasheet.

Can PDTC143XQB-Q be used with 3.3 V microcontrollers?

Yes. Its VI(on) range is 1.5–2.5 V at IC = 20 mA, ensuring robust turn-on with 3.3 V logic; VI(off) is ≤ 0.8 V, guaranteeing reliable cutoff even with 3.3 V output leakage or noise coupling.

Is the DFN1110D-3 package compatible with standard reflow profiles?

Yes. The DFN1110D-3 (SOT8015) package is qualified for lead-free reflow per J-STD-020. Recommended stencil thickness is 0.1 mm; solder paste volume and land pattern match IPC-7351B density level 'N' for optimal wetting and AOI visibility.

How does the built-in resistor network affect thermal performance?

The integrated R1/R2 network reduces total thermal resistance by eliminating solder joint interfaces and parasitic traces associated with external resistors. Measured Rth(j-a) is 298 K/W on 70 µm FR4 - 20% lower than typical discrete BJT + resistor assemblies under identical conditions.