NXP Semiconductors PDTD113EK,115

Overview

PDTD113EK from NXP Semiconductors is a 500 mA, 50 V NPN resistor-equipped transistor (RET) with integrated bias resistors R1 = 1 kΩ and R2 = 1 kΩ, ±10 % resistor ratio tolerance, housed in SOT346 (SC-59A/TO-236) package. It functions as a digital switch for controlling IC inputs and driving moderate-current loads in automotive and industrial control circuits.

For engineers reviewing the PDTD113EK datasheet, PDTD113EK pinout, PDTD113EK application, or PDTD113EK equivalent, key selection factors include its built-in 1 kΩ input/base resistor, 500 mA DC output current capability, 50 V VCEO rating, SOT346 footprint compatibility, and role as a cost-optimized alternative to discrete BJT + resistor solutions in level-shifting and logic-driven switching.

Technical Context

The PDTD113EK integrates two precision-matched on-die resistors-R1 connected between base and input, R2 between base and emitter-to form a monolithic digital transistor with fixed bias network. Its internal configuration eliminates external base resistors and reduces PCB component count while maintaining predictable turn-on/off thresholds.

Designed for DC switching rather than linear amplification, it delivers guaranteed saturation at IC = 50 mA with IB = 2.5 mA (IC/IB = 20), exhibits VI(on) = 1.0–1.8 V and VI(off) = 0.6–1.5 V, and supports operation across −40 °C to +150 °C junction temperature range.

Key Specifications

Pinout & Package

SOT346 (SC-59A/TO-236) plastic surface-mounted package with 3 leads; standard footprint compatible with automated pick-and-place assembly and reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN digital transistor applications.

Compared with BC817-40,115, PDTD113EK reduces bill-of-materials and assembly steps by integrating bias resistors; compared with PDTB113EK,115, it provides NPN polarity for low-side switching while maintaining identical footprint and resistor matching-enabling dual-use board designs.

Availability

PDTD113EK is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and consumer appliance control boards requiring stable component supply and long-term production continuity.

Supply support for PDTD113EK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PDTD113EK belongs to NXP's resistor-equipped transistor (RET) product line, engineered to simplify digital interface design by replacing discrete BJT + resistor combinations with monolithic, production-tested switching elements.

FAQ

What is the maximum continuous collector current rating for PDTD113EK?

The PDTD113EK is rated for 500 mA DC output current under specified thermal conditions. This value is validated per Table 2 (Quick reference data) and Table 6 (Limiting values) in the official NXP datasheet Rev. 02 - 16 November 2009. Derating applies above Tamb = 25 °C per the thermal resistance Rth(j-a) = 500 K/W for the SOT346 package.

Does PDTD113EK require external base resistors for operation?

No, PDTD113EK does not require external base resistors. It integrates R1 = 1 kΩ (base-to-input) and R2 = 1 kΩ (base-to-emitter) internally, forming a complete digital transistor structure. This eliminates the need for discrete biasing components and simplifies circuit design, as confirmed in Section 1.2 (Features) and Table 1 (Product overview) of the NXP datasheet.

What is the pin configuration of PDTD113EK in the SOT346 package?

In the SOT346 (SC-59A/TO-236) package, PDTD113EK has Pin 1 = input (base), Pin 2 = GND (emitter), and Pin 3 = output (collector), as defined in Table 3 (Pinning) of the NXP datasheet. This configuration differs from SOT54 variants, where emitter and collector positions are swapped.

Can PDTD113EK be used as a direct replacement for BC817-40 in existing designs?

PDTD113EK is not a pin-compatible or functional drop-in replacement for BC817-40 due to its integrated bias network and different pinout. While both handle 500 mA, PDTD113EK requires no external resistors and operates as a logic-level switch, whereas BC817-40 needs external biasing. Redesign of the base drive network is necessary when substituting PDTD113EK into BC817-40 layouts.

What is the typical VCE(sat) of PDTD113EK at rated current?

The typical collector-emitter saturation voltage (VCEsat) of PDTD113EK is ≤0.3 V at IC = 50 mA and IB = 2.5 mA, as specified in Table 8 (Characteristics) of the NXP datasheet. This low saturation voltage ensures minimal power loss and heat generation during switching, supporting efficient operation in thermally constrained applications.