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Nexperia USA Inc. PDTD113EQAZ

Part No.:
PDTD113EQAZ
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
Package:
3-XDFN Exposed Pad
Datasheet:
AetrixPDTD113EQAZ.pdf
Description:
TRANS PREBIAS NPN 50V 0.5A 3DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,818

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Product details

Overview

PDTD113EQAZ from Nexperia is an NPN resistor-equipped transistor (RET) in a DFN1010D-3 (SOT1215) package, designed for digital switching and IC input control. It features integrated 1 kΩ base bias resistors (R1 = R2), 50 V VCEO, 500 mA IO, AEC-Q101 qualification, and 0.37 mm profile-enabling compact automotive and industrial logic interface designs.

For engineers reviewing the PDTD113EQAZ datasheet, PDTD113EQAZ pinout, PDTD113EQAZ application, or PDTD113EQAZ equivalent, this device serves as a space- and BOM-optimized replacement for discrete BJT + resistor networks in load switching, level translation, and microcontroller GPIO interfacing where low saturation voltage (<100 mV at 50 mA) and ±10% resistor ratio tolerance are critical.

Technical Context

This RET integrates a monolithic NPN transistor with two precision-matched on-die bias resistors (R1 = R2 = 1 kΩ), eliminating external components for standard digital drive configurations. Its internal topology supports direct connection to 3.3 V/5 V logic outputs without external current-limiting resistors.

The DFN1010D-3 package provides dual collector terminals (pins 3 and 4) for enhanced thermal and current-handling capability, while side-wettable flanks enable AOI-compatible solder joint inspection. Thermal resistance to ambient is 218 K/W on single-layer FR4 with 1 cm² collector pad.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 50 V - Maximum safe collector-emitter voltage under open-base conditions; supports 24 V industrial bus and automotive 12 V/24 V systems.
IO 500 mA - Continuous output current rating; enables direct driving of small relays, LEDs, or logic inputs without external amplification.
R1 / R2 1 kΩ each - Integrated base bias resistors simplify PCB layout and reduce component count versus discrete BJT + resistor solutions.
VCE(sat) ≤100 mV at IC = 50 mA, IB = 2.5 mA - Low saturation voltage minimizes power loss and heat generation in high-duty-cycle switching.
AEC-Q101 Qualified - Meets stress-test requirements for automotive discrete semiconductors, enabling use in engine control, body electronics, and ADAS subsystems.
Package DFN1010D-3 (SOT1215) - 1.1 × 1.0 × 0.37 mm ultra-thin leadless package with side-wettable flanks for automated optical inspection.
fT 210 MHz - Transition frequency of the internal transistor; ensures adequate gain margin for fast digital edge transitions up to ~50 MHz.

Pinout & Package

DFN1010D-3 (SOT1215) is a 4-terminal, leadless surface-mount package with visible side pads for AOI and thermal enhancement. Dual collector terminals (pins 3 and 4) share the same electrical node and improve current derating and thermal dissipation.

Pin/Terminal Circuit Role Design Meaning
1 Input (base) Connected internally to R1; accepts logic-level drive directly from MCU GPIO or buffer outputs.
2 GND (emitter) Emitter terminal tied to system ground; serves as common reference for input and output paths.
3 Output (collector) Primary collector node; electrically identical to pin 4; used for high-side or low-side load switching.
4 Output (collector) Secondary collector node; paralleled with pin 3 to lower effective bond wire resistance and improve thermal path.

Key Features

Feature Design Value
Integrated bias network Matched R1/R2 = 1 kΩ ±10% eliminates external resistors and reduces layout area by >30% vs discrete alternatives.
AEC-Q101 qualification Validated for automotive temperature range (−55 °C to +150 °C) and mechanical stress, supporting under-hood and chassis applications.
Ultra-low profile 0.37 mm height enables use in ultra-thin consumer wearables and stacked PCB assemblies where Z-height is constrained.
Side-wettable flanks Visible copper sidewalls allow automated optical inspection of solder joints-critical for high-reliability manufacturing and zero-defect programs.
Reduced pick-and-place cost Single-component placement replaces two parts (BJT + resistor), cutting feeder usage, placement time, and placement error risk.

Applications

Automotive Body Control Module Industrial PLC Digital Input

Use Scenario: Switching 12 V solenoid valves and LED status indicators in door modules and lighting controllers.

IC Role / Device Role / Timing Role: NPN switch controlling loads referenced to battery rail; driven by 3.3 V microcontroller GPIO with no level-shifting.

Use Value: AEC-Q101 qualification and 50 V VCEO ensure robustness against load dump transients; dual collector pins handle peak currents up to 500 mA reliably.

Use Scenario: Interfacing 24 V field sensors and actuators to 3.3 V/5 V programmable logic controller (PLC) inputs.

IC Role / Device Role / Timing Role: Level translator and current-limited input buffer protecting FPGA or ARM-based controller I/O banks.

Use Value: Built-in 1 kΩ resistors set precise input current (≈2.2 mA at 5 V), eliminating external bias components and ensuring consistent threshold behavior across temperature.

Consumer Wearable Power Management IoT Edge Node Signal Conditioning

Use Scenario: Enabling/disabling low-power sensors and RF modules in smartwatches and hearables using MCU-controlled sleep/wake signals.

IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry; operates in <1 µA leakage mode when off.

Use Value: 0.37 mm package height preserves thin form factor; 0.5 µA ICEO at 50 V ensures minimal standby current drain over full temperature range.

Use Scenario: Debouncing mechanical switches and conditioning push-button inputs in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: Schmitt-trigger-compatible input stage providing clean digital edges to microcontroller interrupt pins.

Use Value: VI(on) = 1.0–1.8 V and VI(off) = 0.6–1.5 V provide >300 mV hysteresis margin; R1/R2 matching ensures stable switching thresholds across production lots.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PDTB113EQAZ PNP complement with identical R1/R2 = 1 kΩ, same package and ratings. Used for high-side switching or inverted logic interfaces where emitter-follower configuration is required. Select when sourcing current from VCC rather than sinking to GND; shares footprint and thermal performance.
BC847B,315 Discrete NPN BJT (no integrated resistors); hFE = 200–450, VCEO = 45 V, SOT23 package. Requires external base resistor; larger footprint (2.9 × 1.3 mm vs 1.1 × 1.0 mm); lacks AEC-Q101 qualification. Choose only if higher DC gain or adjustable bias is needed; not drop-in compatible due to missing R1/R2 and different pinout.

Compared with PDTB113EQAZ, PDTD113EQAZ enables low-side switching with simpler drive logic; compared with BC847B,315, it reduces BOM count and board area but trades off bias flexibility for integration-making it optimal for high-volume, space-constrained digital interface roles.

Availability

PDTD113EQAZ is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and wearable power management requiring stable component supply, AEC-Q101 compliance, and ultra-small footprint.

Supply support for PDTD113EQAZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in high-performance discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

This part belongs to Nexperia's Resistor-Equipped Transistor (RET) family, engineered to replace discrete BJT-resistor combinations in digital switching applications-reducing size, cost, and assembly complexity while maintaining AEC-Q101 reliability.

FAQ

What is the maximum continuous current PDTD113EQAZ can switch?

PDTD113EQAZ is rated for 500 mA continuous output current (IO) under specified thermal conditions-specifically, when mounted on an FR4 PCB with a 1 cm² copper pad on the collector side. Derating applies above 25 °C ambient; at 100 °C, maximum usable current drops to approximately 325 mA based on its 575 mW power dissipation limit and thermal resistance of 218 K/W.

Can PDTD113EQAZ be used with 3.3 V logic without external resistors?

Yes. With R1 = R2 = 1 kΩ, PDTD113EQAZ draws ≈2.2 mA base current when driven by a 3.3 V logic high, placing it well within typical MCU GPIO sink capability (often ≥4 mA). Its VI(on) range (1.0–1.8 V) ensures reliable turn-on, and VI(off) (0.6–1.5 V) guarantees solid turn-off-eliminating need for external biasing components in standard digital interface roles.

How does the dual-collector pin configuration improve performance?

Pins 3 and 4 are internally shorted collector terminals. This design lowers effective bond wire resistance and spreads current across two solder joints, reducing localized heating and improving thermal transfer to the PCB. In practice, it increases current handling margin and enhances long-term reliability under pulsed or sustained 500 mA loads-especially on thermally constrained layouts where single-collector devices would exceed junction temperature limits.

Is PDTD113EQAZ pin-compatible with other parts in the PDTD1xxEQA series?

No. While all PDTD1xxEQA variants share the same DFN1010D-3 package and pinout, their internal resistor values differ (e.g., PDTD123EQAZ uses 2.2 kΩ resistors). Substituting them without circuit revalidation risks incorrect biasing-resulting in insufficient drive (if R too high) or excessive base current (if R too low). Always verify resistor values and VI(on)/VI(off) specs before interchange.

PDTD113EQAZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-XDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
1 kOhms
Resistor - Emitter Base (R2):
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
210 MHz
Power - Max:
325 mW
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1010D-3

PDTD113EQAZ FAQ

1.How can I place an order for PDTD113EQAZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTD113EQAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTD113EQAZ reliable?

The price and inventory of PDTD113EQAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTD113EQAZ is usually 5 days.

3.What payment methods are accepted for PDTD113EQAZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTD113EQAZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTD113EQAZ?

PDTD113EQAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTD113EQAZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTD113EQAZ?

For technical support, including PDTD113EQAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTD113EQAZ requirements.

6.How does Aetrix verify that PDTD113EQAZ is sourced from the original manufacturer or authorized distributors?

All PDTD113EQAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTD113EQAZ meets industry standards.

7.What is the process for return or replacement of PDTD113EQAZ?

All PDTD113EQAZ units undergo pre-shipment inspection (PSI). If there is an issue with PDTD113EQAZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTD113EQAZ part is unused and in its original packaging.

Return procedure for PDTD113EQAZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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