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Nexperia USA Inc. PDTD123ET,215
- Part No.:
- PDTD123ET,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PDTD123ET,215.pdf
- Description:
- TRANS PREBIAS NPN 50V TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:1
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Product details
Overview
PDTD123ET from Nexperia is a 500 mA, 50 V NPN resistor-equipped transistor (RET) with integrated bias resistors R1 = 2.2 kΩ and R2 = 2.2 kΩ, ±10% ratio tolerance, housed in SOT23 package. It functions as a digital switch for IC input control and load switching in automotive and industrial systems, eliminating external base resistors.
For engineers reviewing the PDTD123ET datasheet, PDTD123ET pinout, PDTD123ET application, or PDTD123ET equivalent, this device offers verified DC current gain (hFE ≥ 40 at IC = 50 mA), low VCEsat ≤ 0.3 V, and defined VI(on)/VI(off) thresholds enabling reliable logic-level interfacing without additional biasing components.
Technical Context
This RET integrates two precision thin-film resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ) directly into an NPN silicon die to form a monolithic digital transistor. Its fixed R2/R1 = 1.0 ratio ensures consistent saturation behavior across temperature and process variation.
The device operates as a single-stage switch with emitter-grounded configuration (Pin 2 = emitter), supporting direct connection to microcontroller GPIOs and driving loads up to 500 mA while maintaining guaranteed turn-on/turn-off voltage thresholds (VI(on) = 1.0–2.0 V, VI(off) = 0.6–1.8 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V industrial control rails with safety margin. |
| IO (DC) | 500 mA - Continuous output current capability; supports medium-power relay coils and LED arrays without heatsinking. |
| R1 | 2.2 kΩ ±10% - Input bias resistor value; sets base current for predictable switching with 3.3 V or 5 V logic drivers. |
| R2/R1 | 1.0 ±0.1 - Matched feedback resistor ratio; ensures stable saturation and prevents thermal runaway during sustained conduction. |
| VCEsat | ≤ 0.3 V at IC = 50 mA, IB = 2.5 mA - Low saturation voltage minimizes power loss and self-heating in high-duty-cycle switching. |
| hFE | ≥ 40 at VCE = 5 V, IC = 50 mA - Minimum DC current gain guarantees sufficient drive strength for downstream loads under worst-case conditions. |
| VI(on) | 1.0–2.0 V - On-state input voltage range; compatible with TTL and CMOS logic families without level-shifting circuitry. |
| VI(off) | 0.6–1.8 V - Off-state input voltage window; provides noise immunity against ground bounce and signal coupling in dense PCB layouts. |
Pinout & Package
SOT23 (TO-236AB) surface-mount plastic package, 3-lead, 1.9 mm × 1.1 mm footprint, 0.95 mm height, standard JEDEC outline with gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connected internally to R1; accepts logic-level control signal and routes current through R1 to base junction. |
| 2 | GND (emitter) | Emitter terminal tied to system ground; serves as common return path for load current and bias network. |
| 3 | output (collector) | Switched high-side output node; connects to load (e.g., relay coil, LED string) referenced to positive supply rail. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in bias resistors R1 and R2 | Eliminates need for two external SMT resistors, reducing BOM count and PCB area by ~2.5 mm² per instance. |
| ±10% R2/R1 ratio tolerance | Ensures consistent β-dependent saturation performance across production lots and temperature ranges (−40 °C to +100 °C). |
| 500 mA DC output current rating | Supports direct drive of solenoids, small motors, and multi-segment displays without external driver stages. |
| Low VCEsat ≤ 0.3 V | Reduces conduction loss to <15 mW at 50 mA, enabling operation in thermally constrained spaces like sealed enclosures. |
| VI(on)/VI(off) threshold separation | Guarantees >0.4 V hysteresis margin between on/off states, preventing chatter during slow-rising or noisy control signals. |
Applications
| Automotive Body Control Module | Industrial PLC Digital Output |
|---|---|
Use Scenario: Driving door lock actuators and interior lighting circuits from 3.3 V MCU GPIOs in harsh-temperature environments. IC Role / Device Role / Timing Role: NPN digital switch providing galvanic isolation and current amplification between low-voltage controller and 12 V/24 V loads. Use Value: Built-in R1/R2 eliminates discrete resistor placement errors and solder joint reliability risks in high-vibration automotive assemblies. |
Use Scenario: Switching 24 V DC solenoid valves and indicator LEDs in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Load interface transistor handling repetitive on/off cycles with fast turn-on (<100 ns) and robust ESD immunity (HBM >2 kV). Use Value: 500 mA rating and 50 V VCEO allow direct replacement of BC817-40 in legacy designs without redesigning bias networks. |
| Consumer Appliance Control Board | IoT Sensor Node Power Management |
Use Scenario: Enabling/disabling auxiliary power rails (e.g., display backlight, motor driver IC) in smart washing machines and HVAC controllers. IC Role / Device Role / Timing Role: High-side load switch controlled by ARM Cortex-M0+ core via open-drain GPIO with pull-up. Use Value: VI(on) max of 2.0 V ensures compatibility with 3.3 V logic even under brown-out conditions down to 2.7 V supply. |
Use Scenario: Managing battery-powered sensor peripherals (e.g., environmental sensors, motion detectors) in wireless edge nodes. IC Role / Device Role / Timing Role: Low-quiescent-current enable switch minimizing standby leakage (<100 nA ICEO) during deep-sleep modes. Use Value: SOT23 footprint and 250 mW power dissipation support compact, double-sided PCB layouts required for miniaturized IoT modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN digital switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC817-40,215 | Discrete NPN BJT requiring external base resistors; hFE = 250–630, VCEO = 45 V, no built-in R1/R2. | Lacks integrated biasing; requires two additional 0402 resistors and layout space; higher assembly cost. | Select when precise hFE tuning or higher gain variability is needed; not drop-in for RET-based schematics. |
| PDTB123ET,215 | PNP complement with identical R1/R2 values, same SOT23 package, VECO = 50 V, IO = −500 mA. | Used for high-side switching where load connects to ground; inverted logic polarity vs. PDTD123ET. | Select for complementary high-side control in H-bridge or dual-rail driver stages; shares footprint and thermal profile. |
Compared with BC817-40,215, PDTD123ET reduces component count and improves manufacturing yield but trades off hFE flexibility; compared with PDTB123ET,215, it provides matched NPN functionality for low-side switching with identical thermal and packaging characteristics.
Availability
PDTD123ET is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, and consumer appliance control boards requiring stable component supply and long-term lifecycle support.
Supply support for PDTD123ET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017, serving automotive, industrial, computing, and consumer markets with high-volume, high-reliability components.
This part belongs to Nexperia's Resistor-Equipped Transistor (RET) family, designed specifically to simplify digital switching in space-constrained, cost-sensitive applications by integrating precision bias resistors onto standard transistor dies.
FAQ
What is the maximum continuous collector current for PDTD123ET?
The PDTD123ET supports a DC output current of 500 mA under standard FR4 PCB mounting conditions (single-sided copper, 25 °C ambient). Derating applies above 25 °C: at 70 °C ambient, maximum continuous current drops to approximately 350 mA due to thermal resistance (Rth(j-a) = 500 K/W) and power dissipation limit (250 mW).
Can PDTD123ET replace BC817-40 in existing designs?
Yes, but only if the original design uses external base resistors matching R1 = R2 = 2.2 kΩ and does not require hFE > 40. PDTD123ET provides identical pinout and electrical switching behavior but fixes biasing-no layout change is needed beyond removing two resistors and updating the footprint to SOT23.
What is the function of the internal R2 resistor?
R2 connects between base and emitter, forming a feedback path that stabilizes the transistor in saturation and improves noise immunity. It ensures predictable turn-off behavior by shunting residual base charge during signal transitions, reducing storage time and preventing unintended conduction from leakage currents.
Is PDTD123ET qualified for automotive applications?
Yes-Nexperia qualifies the PDTD123E series for automotive body electronics per AEC-Q101 stress testing requirements. The device meets temperature cycling, humidity bias, and mechanical shock specifications for under-hood and cabin-mounted modules operating from −40 °C to +125 °C junction temperature.
PDTD123ET,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PDTD123ET,215 FAQ
1.How can I place an order for PDTD123ET,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTD123ET,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTD123ET,215 reliable?
The price and inventory of PDTD123ET,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTD123ET,215 is usually 5 days.
3.What payment methods are accepted for PDTD123ET,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTD123ET,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTD123ET,215?
PDTD123ET,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTD123ET,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTD123ET,215?
For technical support, including PDTD123ET,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTD123ET,215 requirements.
6.How does Aetrix verify that PDTD123ET,215 is sourced from the original manufacturer or authorized distributors?
All PDTD123ET,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTD123ET,215 meets industry standards.
7.What is the process for return or replacement of PDTD123ET,215?
All PDTD123ET,215 units undergo pre-shipment inspection (PSI). If there is an issue with PDTD123ET,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTD123ET,215 part is unused and in its original packaging.
Return procedure for PDTD123ET,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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