Nexperia USA Inc. PDTD123YQAZ
- Part No.:
- PDTD123YQAZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
PDTD123YQAZ.pdf
- Description:
- TRANS PREBIAS NPN 50V 0.5A 3DFN
- Quantity:
- Payment:

- Shipping:

Inventory:8,905
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Product details
Overview
PDTD123YQAZ from Nexperia is a 50 V, 500 mA NPN resistor-equipped transistor (RET) in a DFN1010D-3 (SOT1215) package, integrating 2.2 kΩ input bias resistor (R1) and 10 kΩ feedback resistor (R2). It functions as a single-chip digital switch for logic-level signal translation and load control in space-constrained PCBs, with AEC-Q101 qualification for automotive body electronics.
For engineers reviewing the PDTD123YQAZ datasheet, PDTD123YQAZ pinout, PDTD123YQAZ application, or PDTD123YQAZ equivalent, this device serves as a drop-in replacement for discrete BJT + resistor networks in low-voltage digital interface circuits requiring guaranteed turn-on/turn-off thresholds, thermal robustness up to 150 °C junction temperature, and AOI-compatible solder joints.
Technical Context
This RET integrates an NPN silicon transistor with two monolithically embedded thin-film resistors-R1 connected between base and input pin, R2 between base and emitter-enabling direct TTL/CMOS drive without external bias components. Its 4-pin DFN layout places dual collector terminals (pins 3 and 4) in parallel to support 500 mA continuous output current while maintaining ultra-low profile (0.37 mm height).
The device operates with VI(on) = 0.5–1.0 V (typ.) at IC = 20 mA and VI(off) = 0.4–1.0 V (typ.) at IC = 100 µA, ensuring clean digital switching across −40 °C to +150 °C ambient. Built-in ±10% resistor ratio tolerance (R2/R1 = 4.55 typ.) guarantees consistent gain and saturation behavior independent of external component variation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V automotive and industrial supply rails. |
| IO | 500 mA - Continuous DC output current capability; supports driving relays, LEDs, and small solenoids directly. |
| R1 | 2.2 kΩ (±30%) - Input bias resistor sets base current for logic-driven switching; eliminates need for external pull-up/down. |
| R2/R1 | 4.55 (±10%) - Feedback resistor ratio ensures stable saturation and predictable off-state leakage under varying temperature. |
| VCE(sat) | 100 mV (max) at IC = 50 mA, IB = 2.5 mA - Low saturation voltage minimizes power loss and self-heating in high-duty-cycle switching. |
| fT | 210 MHz - Transition frequency confirms suitability for fast digital signal routing up to ~10 MHz edge rates. |
| AEC-Q101 | Qualified - Meets stress-test requirements for automotive discrete semiconductors; validated for under-hood and chassis applications. |
Pinout & Package
DFN1010D-3 (SOT1215) is a leadless, thermally enhanced ultra-thin surface-mount package measuring 1.1 × 1.0 × 0.37 mm, with visible and solderable side pads for automated optical inspection (AOI) and high-reliability reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Input (base) | Accepts logic-level drive signal; internally connected to R1 and R2 network for self-biasing. |
| 2 | GND (emitter) | Emitter reference node; tied to system ground; provides return path for base and collector currents. |
| 3 | Output (collector) | Primary high-current output terminal; paralleled with pin 4 to share 500 mA load current and reduce thermal resistance. |
| 4 | Output (collector) | Secondary collector terminal; electrically identical to pin 3; improves current handling and thermal dissipation in compact layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | Eliminates 2 external resistors per switch, reducing BOM count and PCB area by >30% vs. discrete BJT solutions. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM ≥8 kV), enabling use in door modules and lighting ECUs. |
| Ultra-low profile (0.37 mm) | Enables stacking under connectors or in ultra-thin consumer wearables where Z-height is constrained to <0.4 mm. |
| Dual collector terminals | Reduces effective current density and thermal resistance by distributing 500 mA across two parallel paths, improving long-term reliability. |
| AOI-compatible side pads | Enables 100% automated solder-joint inspection without X-ray, lowering manufacturing defect escape rate in high-volume SMT lines. |
Applications
| Automotive Body Control | Industrial Sensor Interface |
|---|---|
|
Use Scenario: Driving LED status indicators and small relays in door control modules and seat position sensors. IC Role / Device Role / Timing Role: Digital output switch translating MCU GPIO signals into 24 V load control with built-in current limiting. Use Value: Eliminates discrete resistor network, reduces PCB footprint by 0.8 mm² per channel, and meets AEC-Q101 for 15-year vehicle life. |
Use Scenario: Level-shifting and buffering analog sensor outputs (e.g., thermistor, potentiometer) into ADC inputs on PLC I/O cards. IC Role / Device Role / Timing Role: Active pull-up/pull-down switch providing programmable hysteresis and noise immunity on sensor signal lines. Use Value: Enables clean 0–5 V logic transitions with VI(off) ≤ 1.0 V and VI(on) ≥ 0.5 V, rejecting >200 mV of common-mode noise. |
| Consumer Wearable Power Mgmt | Computing Peripheral Control |
|
Use Scenario: Enabling/disabling Bluetooth LE radio power domains and display backlight drivers in smartwatches. IC Role / Device Role / Timing Role: Low-quiescent-load enable switch controlling PMIC LDOs and buck converters during sleep/wake cycles. Use Value: Achieves <100 nA standby leakage (ICBO) and 0.37 mm max height, critical for sub-10 mm wearable thickness constraints. |
Use Scenario: Controlling USB-C port configuration (CC line pull-up/down) and LED activity indicators on docking stations. IC Role / Device Role / Timing Role: Bidirectional logic-level translator with defined VI(on)/VI(off) thresholds for USB PD communication handshaking. Use Value: Guarantees USB-IF compliant CC line voltages (0.2–0.8 V for Rd, 1.9–2.1 V for Rp) using internal R1/R2 ratio of 4.55. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTB123YQA | PNP complement with identical R1/R2 values and package; VECO = 50 V, IO = −500 mA | Used where active-low switching or high-side load control is required instead of low-side sinking | Select when sourcing current from VCC rather than sinking to GND; shares same footprint and thermal profile |
| BC807-40,215 | Discrete NPN BJT (no integrated resistors); hFE = 250–630; requires external base resistor network | Suitable for analog amplification or variable-gain switching where R1/R2 tuning is needed | Choose only if precise hFE control or adjustable bias is required; adds 2 passive components and 1.2 mm² PCB area |
Compared with PDTB123YQA, PDTD123YQAZ offers complementary polarity for low-side switching, while BC807-40 demands external biasing-increasing design complexity and board area-making PDTD123YQAZ optimal for cost-sensitive, space-constrained digital interface applications.
Availability
PDTD123YQAZ is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, consumer wearable power management, and computing peripheral control requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for PDTD123YQAZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in high-performance discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.
This part belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically to replace discrete BJT-resistor combinations in digital switching applications-reducing design time, PCB area, and assembly cost while maintaining AEC-Q101 reliability.
FAQ
What is the maximum continuous collector current for PDTD123YQAZ?
The maximum continuous collector current is 500 mA, verified under standard FR4 PCB mounting conditions with 4-layer copper and 1 cm² collector pad (Ptot = 940 mW at Tamb = 25 °C). Derating applies above 25 °C ambient per Figure 2 in the datasheet, reaching zero at 150 °C junction temperature.
Can PDTD123YQAZ be used as a direct replacement for BC817-40 in digital switching circuits?
Yes-it serves as a functional and pin-compatible upgrade: both handle 500 mA and 50 V, but PDTD123YQAZ integrates R1 = 2.2 kΩ and R2 = 10 kΩ, eliminating two external resistors. VI(on) and VI(off) thresholds are optimized for TTL/CMOS drive, whereas BC817 requires manual bias design and lacks AEC-Q101 qualification.
How does the dual-collector configuration (pins 3 and 4) improve thermal performance?
Pins 3 and 4 are internally shorted collector terminals, effectively doubling the copper cross-section for current conduction and heat spreading. This reduces thermal resistance from junction to solder point (Rth(j-sp) = 40 K/W) and allows higher sustained current in thermally constrained layouts-verified by 575 mW power dissipation on single-layer FR4 with 1 cm² pad.
Is the marking code "10 00 11" on PDTD123YQAZ traceable to date code or lot information?
Yes-the 6-digit binary marking "10 00 11" corresponds to the type-specific code for PDTD123YQA per Table 5. Per Figure 1, it encodes vendor ID, year, and date code in a standardized format readable under magnification; full decoding requires Nexperia's internal marking guide, but the code uniquely identifies this variant within the PDTD113Z/123Y/143XQA series.
PDTD123YQAZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- 210 MHz
- Power - Max:
- 325 mW
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010D-3
PDTD123YQAZ FAQ
1.How can I place an order for PDTD123YQAZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTD123YQAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTD123YQAZ reliable?
The price and inventory of PDTD123YQAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTD123YQAZ is usually 5 days.
3.What payment methods are accepted for PDTD123YQAZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTD123YQAZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTD123YQAZ?
PDTD123YQAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTD123YQAZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTD123YQAZ?
For technical support, including PDTD123YQAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTD123YQAZ requirements.
6.How does Aetrix verify that PDTD123YQAZ is sourced from the original manufacturer or authorized distributors?
All PDTD123YQAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTD123YQAZ meets industry standards.
7.What is the process for return or replacement of PDTD123YQAZ?
All PDTD123YQAZ units undergo pre-shipment inspection (PSI). If there is an issue with PDTD123YQAZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTD123YQAZ part is unused and in its original packaging.
Return procedure for PDTD123YQAZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTD123YQAZ Tags

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MUN5211T1G
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MMUN2211LT1G
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