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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single, Pre-Biased Bipolar Transistors

Nexperia USA Inc. PDTD123YUF

Name: PDTD123YUF
Brand: Nexperia USA Inc.
SKU: PDTD123YUF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PDTD123YUF

Manufacturer:: Nexperia USA Inc.

Category:: Single, Pre-Biased Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: PDTD123YUF.pdf

Description:: TRANS PREBIAS NPN 50V SOT323

Quantity:: RFQ Add To RFQ list

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Inventory:5,383

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Product details

Overview

PDTD123YUF from Nexperia is a 500 mA, 50 V NPN resistor-equipped transistor (RET) in SOT323 (SC-70) package, integrating 2.2 kΩ input bias resistor (R1) and 10 kΩ base-emitter resistor (R2) with ±10% ratio tolerance. It functions as a single-chip digital switch for IC-driven loads, supports AEC-Q101 automotive qualification, and operates up to 175 °C ambient temperature in motor control interface circuits.

For engineers reviewing the PDTD123YUF datasheet, PDTD123YUF pinout, PDTD123YUF application, or PDTD123YUF equivalent, this device serves as a space- and BOM-optimized replacement for discrete BJT + bias resistor networks in 3.3 V/5 V logic-controlled switching, high-temperature industrial sensors, and automotive body electronics where simplified drive and thermal robustness are critical.

Technical Context

This RET integrates an NPN silicon transistor with two monolithically embedded thin-film resistors: R1 (2.2 kΩ) between input and base, and R2 (10 kΩ) between base and emitter. Its 4.55 typical R2/R1 ratio enables stable saturation under varying drive conditions while maintaining low VI(off) (0.4–1.0 V) and VI(on) (0.5–1.4 V) thresholds across −40 °C to +175 °C.

The device delivers 500 mA output current at VCE ≤ 100 mV saturation voltage (IC = 50 mA, IB = 2.5 mA), exhibits 70 minimum DC current gain (hFE) at IC = 50 mA, and features 7 pF collector capacitance and 225 MHz transition frequency - confirming suitability for medium-speed digital switching rather than RF or analog amplification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V automotive and industrial supply rails.
I_O	500 mA - Continuous output current capability; sufficient for driving relays, LEDs, small solenoids, or logic-level MOSFET gates.
R1 / R2	2.2 kΩ / 10 kΩ - Pre-biased resistor network eliminates external components; R2/R1 = 4.55 ensures reliable turn-on with TTL/CMOS logic.
V_CE(sat)	≤ 100 mV @ IC = 50 mA - Low saturation voltage minimizes power loss and self-heating during switching duty cycles.
T_j(max)	175 °C - Junction temperature rating allows operation in under-hood automotive environments and sealed industrial enclosures.
AEC-Q101	Qualified - Meets stress-test requirements for automotive discrete semiconductors; suitable for non-safety-critical vehicle subsystems.
P_tot	425 mW @ 4-layer PCB - Total power dissipation limit defines maximum continuous switching load under standard layout conditions.

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package: 1.35 mm × 1.15 mm × 0.45 mm footprint, 3-terminal leadframe, tin-plated terminations compatible with reflow and wave soldering per JEDEC J-STD-020/001.

Pin/Terminal	Circuit Role	Design Meaning
1	Input (base connection via R1)	Logic-level signal entry point; internal R1 limits base current and enables direct microcontroller GPIO drive without series resistor.
2	GND (emitter)	Reference node for both input and output; connects to system ground plane and provides return path for load current.
3	Output (collector)	Switched high-side or low-side load terminal; rated for 50 V and 500 mA, with <100 mV saturation drop at rated current.

Key Features

Feature	Design Value
Integrated bias network	Monolithic 2.2 kΩ + 10 kΩ resistor pair eliminates 2 external components and reduces PCB area by >30% vs discrete BJT + resistors.
High-temp operation	Rated for continuous operation from −55 °C to +175 °C ambient; validated for engine bay and powertrain control module applications.
AEC-Q101 qualification	Passed stress tests including HTGB, HTRB, ESD-HBM (≥8 kV), and temperature cycling; meets automotive reliability baseline.
Low VI(off)	0.4–1.0 V max off-state input voltage ensures robust noise immunity and prevents false turn-on in noisy 12 V/24 V systems.
Standard SC-70 footprint	Compatible with existing SOT323 pick-and-place equipment and IPC-7351B land patterns; no retooling required for migration.

Applications

Automotive Body Control

Industrial Sensor Interface

Use Scenario: Driving LED status indicators and small relays in door modules and lighting control units.

IC Role / Device Role / Timing Role: Digital output switch translating MCU GPIO signals into load-current paths with minimal external parts.

Use Value: Reduces bill-of-materials count by eliminating discrete base resistors and improves thermal margin over BC817 in confined spaces.

Use Scenario: Level-shifting and isolation of analog sensor outputs (e.g., thermistors, pressure transducers) in PLC I/O modules.

IC Role / Device Role / Timing Role: Signal-conditioning switch enabling 3.3 V microcontroller control of 24 V field-side loads.

Use Value: Maintains VI(on)/VI(off) stability across −40 °C to +85 °C operating range, ensuring consistent on/off behavior in unheated enclosures.

Consumer Appliance Motor Control

Medical Diagnostic Equipment

Use Scenario: Controlling small DC brush motors and buzzer drivers in washing machines and HVAC blowers.

IC Role / Device Role / Timing Role: Medium-current switching element interfacing between MCU PWM outputs and inductive loads.

Use Value: 500 mA rating and 100 mV V_CE(sat) minimize heat generation during continuous 100% duty-cycle operation.

Use Scenario: Enabling/disabling precision analog front-end circuitry (e.g., ADC reference buffers, op-amp biasing) in portable ultrasound devices.

IC Role / Device Role / Timing Role: Power-gating switch providing clean, low-leakage enable control for sensitive analog sections.

Use Value: ICEO ≤ 0.5 µA and ICBO ≤ 100 nA ensure negligible standby current draw, extending battery life in Class II medical devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PDTB123YU	PNP complement with identical R1/R2 values and package; V_CEO = −50 V, I_O = −500 mA.	Used in high-side switching configurations where load connects to V_CC, requiring inverted logic control.	Select when sourcing current from supply rail is required instead of sinking to ground.
BC807-40	Discrete NPN BJT (no integrated resistors); hFE = 250–630, V_CEO = 45 V, I_C = 500 mA - requires external base resistor network.	Offers higher gain and lower V_CE(sat) but increases component count and layout complexity.	Choose only if precise gain control or sub-50 mV saturation is mandatory and board space permits added passives.

Compared with PDTB123YU, PDTD123YUF enables low-side switching with direct logic compatibility; versus BC807-40, it trades minor V_CE(sat) penalty for guaranteed bias stability, reduced layout risk, and AEC-Q101 qualification - making it optimal for production-grade automotive and industrial designs.

Availability

PDTD123YUF is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, consumer appliance motor control, and medical diagnostic equipment requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for PDTD123YUF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

PDTD123YUF belongs to the PDTD1xxxU series of resistor-equipped transistors designed specifically to replace discrete BJT + resistor combinations in cost-sensitive, space-constrained digital switching applications with automotive-grade reliability.

FAQ

What is the maximum allowable input voltage (VI) for PDTD123YUF?

The absolute maximum input voltage is −5 V to +12 V, as specified in Table 6. Exceeding +12 V risks damaging the internal R1 resistor or base-emitter junction. For 3.3 V or 5 V logic interfaces, no external clamping is needed due to built-in VI(off) ≤ 1.0 V and VI(on) ≥ 0.5 V thresholds.

Can PDTD123YUF be used in high-frequency PWM applications?

It supports PWM switching up to ~100 kHz with acceptable efficiency, given its 225 MHz fT and 7 pF Cc. However, it is not optimized for RF or >500 kHz switching due to lack of specified switching time parameters (t_on/t_off) and relatively high storage time in saturated mode.

How does the R2/R1 ratio of 4.55 affect circuit behavior?

A 4.55 R2/R1 ratio ensures strong base-emitter shunting during turn-off, reducing storage time and improving switching speed consistency. It also stabilizes hFE against process variation, yielding predictable IC/IB = 20 drive requirements across temperature and unit-to-unit spread.

Is thermal derating required when mounting on a 2-layer PCB?

Yes - Rth(j-a) rises from 353 K/W (4-layer) to 500 K/W (single-sided FR4). At 25 °C ambient, maximum continuous power drops from 425 mW to 300 mW. For 500 mA loads, ensure V_CE remains < 600 mV or implement forced airflow or copper pour to maintain T_j ≤ 175 °C.

PDTD123YUF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN - Pre-Biased

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Resistor - Base (R1):: 2.2 kOhms

Resistor - Emitter Base (R2):: 10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic:: 100mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max):: 500nA

Frequency - Transition:: 225 MHz

Power - Max:: 300 mW

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

PDTD123YUF FAQ

1.How can I place an order for PDTD123YUF through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTD123YUF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTD123YUF reliable?

The price and inventory of PDTD123YUF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTD123YUF is usually 5 days.

3.What payment methods are accepted for PDTD123YUF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTD123YUF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTD123YUF?

PDTD123YUF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTD123YUF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTD123YUF?

For technical support, including PDTD123YUF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTD123YUF requirements.

6.How does Aetrix verify that PDTD123YUF is sourced from the original manufacturer or authorized distributors?

All PDTD123YUF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTD123YUF meets industry standards.

7.What is the process for return or replacement of PDTD123YUF?

All PDTD123YUF units undergo pre-shipment inspection (PSI). If there is an issue with PDTD123YUF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTD123YUF part is unused and in its original packaging.

Return procedure for PDTD123YUF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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