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Nexperia USA Inc. PDTD143ETR
- Part No.:
- PDTD143ETR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PDTD143ETR.pdf
- Description:
- TRANS PREBIAS NPN 50V TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,743
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Product details
Overview
PDTD143ETR from Nexperia is an NPN resistor-equipped transistor (RET) in SOT23 package, designed for digital switching applications with integrated 4.7 kΩ input and feedback bias resistors. It delivers 500 mA output current at up to 50 V VCEO, operates reliably from −55 °C to +175 °C, and serves as a drop-in replacement for BC807-series transistors in IC input control and load switching circuits.
For engineers reviewing the PDTD143ETR datasheet, PDTD143ETR pinout, PDTD143ETR application, or PDTD143ETR equivalent, key selection criteria include its built-in R1/R2 ratio tolerance (±10 %), guaranteed VI(on) (1.0–2.2 V at 20 mA), low VCE(sat) (≤100 mV), thermal robustness to 175 °C junction temperature, and SOT23 footprint compatibility with high-density PCB layouts.
Technical Context
This RET integrates a monolithic NPN transistor with two precision laser-trimmed on-die resistors: R1 (input bias) and R2 (base-emitter feedback), forming a single-input, single-output digital switch. The fixed R2/R1 ratio of 1.0 ±0.1 eliminates external bias network design while ensuring stable turn-on/turn-off thresholds across temperature.
It functions as a current-controlled switch where input voltage directly drives base current through R1, while R2 stabilizes operating point against β variation and thermal drift. Its 225 MHz fT supports fast edge rates in logic-level interfacing, and its 0.5 µA ICEO ensures low leakage in off-state standby modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V industrial control rails and 36 V automotive subsystems. |
| IO | 500 mA - Continuous DC output current capability; sufficient to drive relays, LEDs, and small solenoids without external heat sinking. |
| R1 | 4.7 kΩ (3.3–6.1 kΩ) - Input bias resistor value; sets base current for defined switching threshold with standard 3.3 V/5 V logic levels. |
| R2/R1 | 1.0 ±0.1 - Precision resistor ratio; ensures consistent current gain stabilization and predictable saturation behavior across production lots. |
| VCE(sat) | ≤100 mV at IC = 50 mA, IB = 2.5 mA - Low saturation voltage minimizes power loss and self-heating during conduction. |
| Tj(max) | 175 °C - Maximum junction temperature; supports operation in under-hood, motor-drive, and high-ambient industrial environments. |
| fT | 225 MHz - Transition frequency of internal transistor; allows reliable switching at >10 MHz digital signal edges without excessive rise/fall time degradation. |
Pinout & Package
Package: SOT23 (TO-236AB), surface-mount plastic package measuring 2.9 mm × 1.3 mm × 1.0 mm with 1.9 mm lead pitch. Designed for reflow and wave soldering per IPC-7095 guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (I) | Input (base node) | Connected internally to R1; accepts logic-level voltage to initiate switching; no external base resistor required. |
| 2 (GND) | Ground (emitter node) | Emitter terminal tied to system ground; provides return path for load current and R2 feedback loop. |
| 3 (O) | Output (collector node) | Switched high-side output; connects to load (e.g., relay coil, LED anode); rated for 50 V and 500 mA continuous. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | Monolithic R1 (4.7 kΩ) and R2 (4.7 kΩ) eliminate two external resistors and reduce PCB area by ≥3 mm² per channel. |
| High-temp operation | Rated for continuous operation up to 175 °C junction temperature-validated per AEC-Q200 stress tests for industrial reliability. |
| Low input threshold variance | VI(on) = 1.0–2.2 V at 20 mA ensures robust turn-on with 3.3 V CMOS outputs even under worst-case process/temperature corners. |
| Stable off-state leakage | ICEO ≤ 0.5 µA at VCE = 50 V guarantees minimal standby current in battery-powered sensor nodes and always-on controllers. |
| Thermal resistance | Rth(j-a) = 327 K/W on 4-layer FR4 PCB-enables 460 mW power dissipation without forced air or heatsinking in compact enclosures. |
Applications
| Industrial PLC Input Stage | Automotive Body Control Module |
|---|---|
|
Use Scenario: Isolating and conditioning 24 V DC field signals (e.g., limit switches, proximity sensors) into microcontroller GPIO inputs. IC Role / Device Role / Timing Role: Digital level translator and current-limiting interface switch between high-voltage field side and low-voltage logic side. Use Value: Eliminates need for discrete base resistor and pull-down, reduces BOM count by two parts, and maintains <1 µA leakage in off-state to prevent false triggering. |
Use Scenario: Driving indicator LEDs and small solenoid valves (e.g., door lock actuators, HVAC dampers) from 5 V MCU outputs. IC Role / Device Role / Timing Role: High-side load switch with built-in current limiting and thermal protection via inherent Rth and Tj(max). Use Value: Delivers 500 mA peak current with <100 mV saturation drop, minimizing power loss and enabling direct MCU GPIO control without driver ICs. |
| Consumer Appliance Motor Control | IoT Sensor Node Power Gating |
|
Use Scenario: Enabling/disabling auxiliary 12 V brushless fan motors or pump drivers in smart home appliances using 3.3 V ESP32 outputs. IC Role / Device Role / Timing Role: Logic-compatible power switch with fast turn-on (<100 ns) and controlled rise time to suppress EMI during motor startup. Use Value: 225 MHz fT ensures clean switching edges; ±10 % R2/R1 tolerance prevents gain shift over temperature, maintaining consistent motor enable timing. |
Use Scenario: Gating power to RF modules (e.g., BLE, LoRa) during deep-sleep cycles in battery-operated environmental sensors. IC Role / Device Role / Timing Role: Ultra-low-leakage enable switch that isolates downstream circuitry to extend battery life beyond 5 years. Use Value: ICEO ≤ 0.5 µA and VI(off) = 0.6–1.5 V ensure reliable off-state blocking; SOT23 footprint fits tight space constraints of coin-cell-powered PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC807-40,215 | Discrete NPN transistor requiring external 4.7 kΩ base resistor; no integrated R2; hFE = 250–600 (wider spread). | Higher component count and layout sensitivity; less stable bias under temperature variation. | Select when fine-tuned gain adjustment or higher hFE is needed; not recommended for high-volume, space-constrained designs. |
| PDTB143ET,215 | PNP complement with identical R1/R2 values (4.7 kΩ), same SOT23 package, but inverted polarity and −500 mA sink capability. | Suitable only for low-side switching or complementary push-pull configurations-not a functional substitute for NPN topology. | Choose only for matched PNP/NPN pair implementation; requires redesign of control logic and load connection. |
Compared with BC807-40, PDTD143ETR reduces bill-of-materials and improves thermal stability via monolithic resistors, while PDTB143ET offers polarity-matched functionality but cannot replace it in high-side switching roles without circuit re-architecting.
Availability
PDTD143ETR is available at Aetrix Electronics and suitable for industrial PLC input stages, automotive body control modules, consumer appliance motor control, and IoT sensor node power gating requiring stable component supply and long-term manufacturability.
Supply support for PDTD143ETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET devices, headquartered in Nijmegen, Netherlands.
The PDTD143ETR belongs to Nexperia's Resistor-Equipped Transistor (RET) family, engineered specifically to simplify digital interface design in space- and cost-sensitive applications across industrial, automotive, and consumer markets.
FAQ
What is the maximum continuous collector current for PDTD143ETR?
The PDTD143ETR supports a continuous output current (IO) of 500 mA at Tamb ≤ 25 °C on a 4-layer FR4 PCB. Derating applies above 25 °C per the published power derating curve-e.g., ~320 mA at 85 °C ambient. This rating assumes proper thermal layout and no simultaneous voltage/current stress beyond absolute maximum limits.
Can PDTD143ETR replace BC807-40 in existing designs without layout changes?
Yes-PDTD143ETR uses the same SOT23 footprint and pinout (I-GND-O) as BC807-40, but replaces the external base resistor with integrated R1/R2. Layout changes are unnecessary; however, verify that the 4.7 kΩ input impedance matches your driving source's output capability and that VI(on)/VI(off) thresholds align with your logic family.
Is PDTD143ETR qualified for automotive applications?
No-PDTD143ETR is explicitly marked as non-automotive qualified in its revision history. It lacks AEC-Q101 qualification and automotive-grade screening. For automotive use, Nexperia offers the Q-qualified variant PDTD143ET-Q, which undergoes extended temperature cycling, HTOL, and ESD testing per automotive standards.
How does the R2/R1 ratio affect switching performance?
The R2/R1 ratio of 1.0 ±0.1 stabilizes the transistor's DC operating point by providing negative feedback from collector to base, reducing sensitivity to hFE variation and temperature drift. This yields consistent VCE(sat) and faster, more predictable turn-off due to active base discharge through R2-critical for reliable digital switching in noisy environments.
PDTD143ETR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 4.7 kOhms
- Resistor - Emitter Base (R2):
- 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- 225 MHz
- Power - Max:
- 320 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PDTD143ETR FAQ
1.How can I place an order for PDTD143ETR through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTD143ETR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTD143ETR reliable?
The price and inventory of PDTD143ETR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTD143ETR is usually 5 days.
3.What payment methods are accepted for PDTD143ETR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTD143ETR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTD143ETR?
PDTD143ETR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTD143ETR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTD143ETR?
For technical support, including PDTD143ETR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTD143ETR requirements.
6.How does Aetrix verify that PDTD143ETR is sourced from the original manufacturer or authorized distributors?
All PDTD143ETR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTD143ETR meets industry standards.
7.What is the process for return or replacement of PDTD143ETR?
All PDTD143ETR units undergo pre-shipment inspection (PSI). If there is an issue with PDTD143ETR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTD143ETR part is unused and in its original packaging.
Return procedure for PDTD143ETR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTD143ETR Tags
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