Nexperia USA Inc. PDZ10BZ

Overview

PDZ10BZ from Nexperia is a single Zener diode designed for low-power voltage regulation in space-constrained SMD applications, with a nominal Zener voltage of 10.0 V (9.77–10.21 V at I_Z = 5 mA), ±2 % tolerance, 60 Ω maximum differential resistance at 5 mA, 0.1 μA maximum reverse leakage at 7.0 V, and 400 mW total power dissipation on FR4 PCB.

For engineers reviewing the PDZ10BZ datasheet, PDZ10BZ pinout, PDZ10BZ application, or PDZ10BZ equivalent, this device serves as a precision, low-leakage, hard-knee voltage reference in power supply feedback paths, overvoltage clamping circuits, and analog signal conditioning where stable 10 V regulation at low currents (<5 mA) is required.

Technical Context

The PDZ10BZ operates as a two-terminal, silicon planar Zener diode with avalanche-dominated breakdown at 10 V, exhibiting a temperature coefficient of +6.4 mV/K at 5 mA - indicating positive thermal drift optimized for mid-range Zener voltages. Its hard breakdown knee and low dynamic impedance ensure stable regulation under light-load conditions.

Designed for surface-mount use in SOD323 (SC-76) package, it delivers 110 pF capacitance at 0 V and supports non-repetitive peak reverse current up to 3.5 A (100 µs pulse), enabling transient suppression in low-energy protection circuits without requiring external series resistance.

Key Specifications

Pinout & Package

PDZ10BZ is housed in a compact SOD323 (SC-76) plastic surface-mount package measuring 1.8 × 1.35 × 0.95 mm, with cathode marked by a visible bar on the top surface. The package is optimized for reflow soldering using standard footprint dimensions (0.6 mm pad width, 0.95 mm pad length, 2.1 mm center-to-center pitch).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with BZX55C10 and MMSZ5240B, PDZ10BZ offers superior low-current regulation (60 Ω @ 5 mA), smallest footprint (SOD323), and lowest leakage (0.1 μA), making it optimal for modern SMT designs prioritizing precision at micro-power levels.

Availability

PDZ10BZ is available at Aetrix Electronics and suitable for power supply feedback references, microcontroller I/O clamping, analog sensor biasing, and low-power voltage monitoring requiring stable component supply and consistent parametric performance across production batches.

Supply support for PDZ10BZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a leading global semiconductor manufacturer specializing in high-volume, high-reliability discrete and logic devices, with core expertise in advanced packaging and automotive-grade qualification.

PDZ10BZ belongs to the PDZ-B series of low-power Zener diodes engineered for general-purpose voltage regulation in consumer, industrial, and computing applications where small size, tight tolerance, and low leakage are critical.

FAQ

What is the maximum continuous reverse current the PDZ10BZ can sustain at 10 V?

The PDZ10BZ is not rated for continuous reverse current at its Zener voltage - it is designed for shunt regulation with current limited externally by a series resistor. Its absolute maximum reverse current is defined by power dissipation: at 10 V, maximum continuous I_Z ≈ 40 mA (400 mW ÷ 10 V), assuming full derating to ambient and no heatsinking.

Can PDZ10BZ be used in place of a 10 V Zener with 5% tolerance?

Yes - PDZ10BZ has approximately ±2 % tolerance (9.77–10.21 V), tighter than standard 5% Zeners. Its lower dynamic impedance and leakage improve regulation accuracy, but verify that the host circuit's series resistor and thermal layout accommodate its SOD323 package and 400 mW limit.

Does PDZ10BZ require a heatsink for 400 mW operation?

No - the 400 mW rating assumes mounting on a standard FR4 PCB with single-sided 1 oz copper and tin-plated traces. No external heatsink is needed; however, power must be derated linearly above 25 °C ambient per the published curve (e.g., ~200 mW at 75 °C).

How does the +6.4 mV/K temperature coefficient affect long-term stability?

The +6.4 mV/K coefficient means V_Z increases by ~0.64 V over a 100 °C junction temperature rise. In precision applications, this drift must be compensated via circuit design (e.g., opposing TC components) or calibrated out; it is typical for 10 V Zeners and reflects optimized avalanche breakdown physics.