Nexperia USA Inc. PDZ30BGWX

Overview

PDZ30BGWX from Nexperia is a single Zener diode in SOD123 package, designed for precision voltage regulation and overvoltage protection in low-power circuits. It features a nominal Zener voltage of 30 V (29.19–30.69 V at I_Z = 5 mA), ±2 % tolerance (B-series), 365 mW total power dissipation at T_amb ≤ 25 °C, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the PDZ30BGWX datasheet, PDZ30BGWX pinout, PDZ30BGWX application, or PDZ30BGWX equivalent, this device is selected for stable reference generation in power supply feedback loops, ESD clamp networks, and voltage threshold detection where tight V_Z tolerance, low differential resistance (23.0 Ω typ), and robust surge capability (1.0 A non-repetitive peak reverse current) are required.

Technical Context

This Zener diode operates in reverse breakdown mode with a specified working voltage range defined at I_Z = 5 mA. Its temperature coefficient is +26.6 mV/K (typical), indicating positive V_Z drift with junction temperature - critical for thermal stability analysis in bias networks.

The device exhibits low reverse current (IR ≤ 0.05 μA at VR = 23.0 V), high surge robustness (P_ZSM = 40 W for tp = 100 μs), and thermal resistance R_th(j-a) = 340 K/W in free air - enabling compact placement on FR4 PCBs without forced cooling.

Key Specifications

Pinout & Package

SOD123 surface-mount plastic package: 2.80 mm × 1.70 mm footprint, 1.3 mm height, cathode marked by bar on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with BZX84-C30 and MMSZ5257ET1G, PDZ30BGWX delivers superior voltage accuracy, lower leakage, and certified automotive reliability - making it optimal for safety-critical or high-precision regulation where ±2 % tolerance and AEC-Q101 traceability are mandatory.

Availability

PDZ30BGWX is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, consumer power adapter feedback circuits, and medical portable device protection requiring stable component supply with guaranteed long-term availability.

Supply support for PDZ30BGWX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

PDZ30BGWX belongs to the PDZ-GW series of general-purpose Zener diodes engineered for precision voltage regulation and transient suppression in space-constrained, thermally demanding automotive and industrial applications.

FAQ

What is the maximum continuous reverse voltage that PDZ30BGWX can sustain without breakdown?

PDZ30BGWX is rated for a nominal Zener voltage of 29.19–30.69 V at I_Z = 5 mA. Its absolute maximum reverse voltage before irreversible breakdown is not specified; however, sustained operation above 30.69 V will cause increasing reverse current and thermal stress. For reliable regulation, design must maintain reverse bias within the specified V_Z window and ensure power dissipation stays below 365 mW at 25 °C ambient.

How does the temperature coefficient affect PDZ30BGWX's performance in a 0–85 °C ambient range?

PDZ30BGWX has a typical temperature coefficient of +26.6 mV/K at I_Z = 5 mA. Over a 85 °C rise, V_Z increases by approximately 2.26 V - shifting from ~29.5 V at 0 °C to ~31.8 V at 85 °C. This positive drift must be accounted for in reference-sensitive circuits; compensation techniques include using complementary TC components or selecting adjacent V_Z values with lower coefficients.

Can PDZ30BGWX replace a 30 V Zener diode in an existing SOD123 footprint design?

Yes - PDZ30BGWX uses the standard SOD123 package with identical mechanical dimensions (2.80 mm × 1.70 mm × 1.3 mm) and pinout (cathode at pin 1, anode at pin 2). Its marking code "BT" matches the official Nexperia designation, and its electrical parameters (V_Z, r_dif, IR) meet or exceed legacy 30 V Zeners in the same package, enabling drop-in replacement without layout changes.

Is PDZ30BGWX suitable for use in high-frequency signal path clamping?

No - PDZ30BGWX has a diode capacitance of 66 pF at V_R = 0 V and f = 1 MHz, which introduces significant shunt impedance below ~25 MHz. While usable for low-speed overvoltage protection (e.g., power rails, GPIO lines), it is unsuitable for RF or high-speed digital signal clamping where sub-5 pF capacitance is required. For such applications, TVS diodes like PESD5V0S1BA or ESD protection arrays are recommended instead.