Nexperia USA Inc. PDZ6.8BF

Overview

PDZ6.8BF from Nexperia is a single silicon Zener diode designed for low-power voltage regulation in space-constrained SMD applications, with a nominal Zener voltage of 6.65 V to 6.93 V at I_Z = 5 mA, dynamic resistance ≤ 60 Ω, reverse current ≤ 0.5 μA at V_R = 5.5 V, and total power dissipation up to 400 mW on FR4 PCB. It operates as a precision shunt reference in bias networks, overvoltage clamping circuits, and low-current voltage stabilization stages.

For engineers reviewing the PDZ6.8BF datasheet, PDZ6.8BF pinout, PDZ6.8BF application, or PDZ6.8BF equivalent, this device is selected for compact, stable, low-leakage Zener regulation where tight voltage tolerance (±2 %), hard breakdown knee, and thermal stability (S_Z = +3.4 mV/K) are critical in consumer, industrial, and communication power management subsystems.

Technical Context

This Zener diode employs planar epitaxial construction to achieve sharp reverse breakdown characteristics and low leakage across its operating temperature range (−65 °C to +150 °C). Its junction-to-solder-point thermal resistance is 130 K/W, enabling reliable operation under moderate ambient conditions when mounted on standard FR4 PCB footprints.

The device exhibits a positive temperature coefficient of +3.4 mV/K at I_Z = 5 mA, making it suitable for temperature-compensated reference designs when paired with negative-TC components. Its capacitance is 215 pF at 1 MHz and 0 V reverse bias, limiting high-frequency noise filtering use but supporting DC and low-frequency regulation roles.

Key Specifications

Pinout & Package

PDZ6.8BF is housed in a SOD323 (SC-76) surface-mount plastic package measuring 1.8 mm × 1.35 mm × 0.95 mm, with cathode indicated by a marking bar on the device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with BZX384-B6V8 and MMSZ4687T1G, PDZ6.8BF delivers superior low-current regulation stability (≤60 Ω r_dif, +3.4 mV/K S_Z) and tighter voltage control (±2 %), making it optimal for precision analog references and low-power embedded systems where leakage and thermal drift directly impact system accuracy.

Availability

PDZ6.8BF is available at Aetrix Electronics and suitable for USB protection circuits, microcontroller reset networks, LED biasing modules, and signal level translation stages requiring stable component supply and traceable sourcing.

Supply support for PDZ6.8BF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with manufacturing rooted in process efficiency and automotive-grade quality systems.

PDZ6.8BF belongs to the PDZ-B series of low-power Zener diodes engineered specifically for compact, stable voltage reference and clamping in consumer, industrial, and communications equipment where SMD footprint and parametric consistency are essential.

FAQ

What is the maximum continuous reverse current the PDZ6.8BF can handle before degradation?

The PDZ6.8BF is rated for non-repetitive peak reverse current (I_ZSM) of 5.5 A at t_p = 100 µs, but its continuous Zener current is limited by thermal dissipation. At 25 °C ambient on FR4 PCB, sustained operation above ~50 mA will exceed 400 mW P_tot, risking junction overheating. Derating is required above 25 °C per the 340 K/W R_th(j-a) curve.

Does PDZ6.8BF support reflow soldering, and what profile is recommended?

Yes - PDZ6.8BF is qualified for lead-free reflow soldering per JEDEC J-STD-020. The recommended peak temperature is 260 °C for ≤ 30 seconds, with ramp rates ≤ 3 °C/s pre-peak. Figure 9 in the datasheet specifies the exact 0.6 mm × 0.5 mm solder land pattern for SOD323, and thermal profiling must ensure solder joint integrity without exceeding T_j = 150 °C.

How does the +3.4 mV/K temperature coefficient affect circuit performance at 85 °C ambient?

At 85 °C ambient, assuming typical board thermal resistance, junction temperature may reach ~105 °C. With S_Z = +3.4 mV/K, V_Z increases by ~240 mV relative to 25 °C (ΔT ≈ 80 K). So a nominal 6.8 V device shifts to ~7.04 V - a 3.5 % rise. This must be accounted for in precision references, though it remains predictable and linear.

Can PDZ6.8BF be used in series or parallel configurations for higher voltage or current handling?

Series connection is viable for higher voltage clamping (e.g., two PDZ6.8BF yield ~13.6 V), but requires matched units to avoid unequal voltage sharing. Parallel use is not recommended due to manufacturing spread in V_Z and r_dif, which causes current hogging and thermal runaway - discrete current-sharing resistors would be mandatory, negating the benefit of low-cost Zener implementation.