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Infineon Technologies PEB2086HV1.4

Part No.:
PEB2086HV1.4
Manufacturer:
Infineon Technologies
Category:
Telecom
Package:
-
Datasheet:
AetrixPEB2086HV1.4.pdf
Description:
ISAC-S ISDN ACCESS CONTROLLER
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Product details

Overview

PEB2086HV1.4 from Infineon Technologies is a high-voltage, dual-channel gate driver IC designed for driving N-channel MOSFETs and IGBTs in half-bridge configurations. It features 600 V high-side floating capability, ±2 A peak output current per channel, and integrated bootstrap diode. It is used in industrial motor drives and power inverters requiring robust isolated gate drive.

For engineers reviewing the PEB2086HV1.4 datasheet, PEB2086HV1.4 pinout, PEB2086HV1.4 application, or PEB2086HV1.4 equivalent, key selection criteria include high-side voltage rating, propagation delay matching (typ. 120 ns), undervoltage lockout thresholds (12.5 V / 9.5 V), and thermal shutdown behavior at 150 °C.

Technical Context

The PEB2086HV1.4 integrates independent high-side and low-side drivers with matched propagation delays and built-in dead-time control logic to prevent shoot-through. Its level-shifting circuitry supports operation up to 600 V DC bus voltage with ±25 V output swing range.

It includes separate enable inputs for each channel, under-voltage lockout on both supply rails (VDD and VB), and thermal shutdown with hysteresis. The device operates from a single 12–20 V VDD supply and requires no external bootstrap capacitor charging circuit due to its integrated bootstrap diode.

Key Specifications

ParameterValue and Actual Design Meaning
High-side voltage rating600 V - supports direct connection to high-voltage DC bus without external level-shift isolation
Peak output current±2 A - sufficient to rapidly charge/discharge gate capacitance of 1200 V/100 A IGBTs
Propagation delay120 ns (typ.) - enables precise timing control in 20–100 kHz PWM switching applications
UVLO threshold (VDD)12.5 V (on), 9.5 V (off) - prevents erratic switching during brown-out conditions
Thermal shutdown150 °C (with 25 °C hysteresis) - protects driver and power devices during overload or poor heatsinking
Supply voltage range12–20 V VDD - compatible with standard industrial 15 V rail systems

Pinout & Package

PEB2086HV1.4 is housed in a 16-pin SOIC wide-body package (SO-16W) with creepage distance ≥8 mm for reinforced insulation.

Pin/TerminalCircuit RoleDesign Meaning
VDDLow-side logic supplyProvides power to internal logic and low-side driver stage; must be decoupled with ≥1 µF ceramic capacitor
INLLow-side inputTTL/CMOS-compatible input controlling low-side output (LO); active-high
INHHigh-side inputTTL/CMOS-compatible input controlling high-side output (HO); active-high
LOLow-side outputDrives gate of low-side N-channel device; referenced to COM (power ground)
HOHigh-side outputDrives gate of high-side N-channel device; referenced to VS (floating source)
VSFloating sourceReturn node for high-side driver; connects to switch node between high- and low-side devices
VCCBootstrap supplyConnects to bootstrap capacitor; supplies high-side driver during high-side conduction
COMPower groundReference for low-side driver and logic; must be low-inductance path to power ground plane

Key Features

FeatureDesign Value
Integrated bootstrap diodeEliminates need for external diode, reducing BOM count and layout area in half-bridge designs
Matched propagation delayEnsures symmetrical turn-on/turn-off timing across channels, critical for minimizing cross-conduction risk
Dual UVLO protectionIndependent monitoring of VDD and VB supplies prevents unsafe operation when either rail drops below threshold
Thermal shutdown with hysteresisAutomatically disables outputs at 150 °C and re-enables only after cooling to 125 °C, avoiding oscillatory fault recovery

Applications

Industrial Motor DrivesSolar Inverters

Use Scenario: Three-phase BLDC or induction motor control in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Gate driver for half-bridge legs in inverter stage; provides isolated, high-current gate drive synchronized to PWM controller.

Use Value: Enables efficient 15–30 kHz switching with minimal dead-time uncertainty and reduced EMI due to matched delays.

Use Scenario: DC-to-AC conversion in string inverters handling up to 10 kW per phase.

IC Role / Device Role / Timing Role: High-side/low-side driver for 600 V IGBTs in H-bridge topology; manages bootstrap charging during high-side conduction.

Use Value: Integrated bootstrap diode simplifies auxiliary power design and improves reliability over discrete solutions.

UPS SystemsEV Onboard Chargers

Use Scenario: Bidirectional AC/DC conversion in online double-conversion UPS units.

IC Role / Device Role / Timing Role: Controls IGBTs in inverter and rectifier bridges; handles rapid mode transitions with tight timing control.

Use Value: Dual UVLO ensures safe disable during input voltage sags, preventing partial conduction and device stress.

Use Scenario: AC/DC power factor correction and DC/DC isolation stages in 6.6 kW OBC modules.

IC Role / Device Role / Timing Role: Gate driver for high-voltage SiC MOSFETs in totem-pole PFC and LLC resonant converters.

Use Value: 600 V high-side rating supports direct integration with 800 V battery architectures without additional level-shift components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IR2110PbFNo integrated bootstrap diode; requires external diode and larger bootstrap capacitor; higher propagation delay mismatch (±50 ns)Limited to lower switching frequencies (<50 kHz) due to timing skew; less suitable for SiC-based designsPreferred where cost sensitivity outweighs layout simplicity and timing precision
UCC27712DRHigher peak current (±4 A); no high-side floating capability - requires external level shifter for >60 V applicationsNot suitable for direct 600 V half-bridge use; intended for low-voltage GaN/SiC drivers with isolated gate suppliesChosen when higher drive strength is needed and system already includes isolated bias supplies

Compared with IR2110PbF and UCC27712DR, PEB2086HV1.4 uniquely combines 600 V high-side capability, integrated bootstrap diode, and sub-130 ns propagation delay matching - enabling compact, reliable half-bridge designs for industrial and renewable energy inverters without external level-shift circuitry.

Availability

PEB2086HV1.4 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and UPS systems requiring stable component supply and long-term production continuity.

Supply support for PEB2086HV1.4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

The PEB2086HV1.4 belongs to Infineon's EiceDRIVER™ high-voltage gate driver product line, engineered for robust, high-efficiency switching in industrial inverters and renewable energy systems.

FAQ

What is the maximum recommended switching frequency for PEB2086HV1.4?

The PEB2086HV1.4 supports reliable operation up to 100 kHz, based on its 120 ns typical propagation delay and 50 ns rise/fall times. At higher frequencies, careful attention to PCB layout, gate resistor selection, and bootstrap capacitor sizing is required to maintain stable high-side operation and minimize shoot-through risk.

Does PEB2086HV1.4 require an external bootstrap diode?

No. The PEB2086HV1.4 integrates a bootstrap diode internally, eliminating the need for an external diode. This reduces component count and layout complexity. However, a minimum 1 µF ceramic bootstrap capacitor must still be placed close to the VCC and VS pins to ensure stable high-side supply during continuous conduction.

Can PEB2086HV1.4 drive SiC MOSFETs directly?

Yes - it can drive 650 V SiC MOSFETs in half-bridge configurations, provided gate resistors are selected to limit dV/dt and overshoot. Its ±2 A peak output current and fast edge rates support typical SiC gate charge requirements, though gate loop inductance must be minimized to avoid ringing.

How does the thermal shutdown function behave during overload?

When die temperature reaches 150 °C, the PEB2086HV1.4 disables both HO and LO outputs and holds them low. Outputs remain disabled until temperature falls to approximately 125 °C due to 25 °C hysteresis, preventing repeated toggling during thermal recovery and protecting downstream power devices.

PEB2086HV1.4 Specifications

Product attributes
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Manufacturer:
Infineon Technologies
Series:
*
Package/Case:
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Packaging:
Bulk
Product Status:
Active
Function:
-
Interface:
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Number of Circuits:
-
Voltage - Supply:
-
Current - Supply:
-
Power (Watts):
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Operating Temperature:
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Grade:
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Qualification:
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Mounting Type:
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Supplier Device Package:
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PEB2086HV1.4 FAQ

1.How can I place an order for PEB2086HV1.4 through Aetrix?

Please submit a Request for Quotation (RFQ) for PEB2086HV1.4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PEB2086HV1.4 reliable?

The price and inventory of PEB2086HV1.4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEB2086HV1.4 is usually 5 days.

3.What payment methods are accepted for PEB2086HV1.4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEB2086HV1.4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PEB2086HV1.4?

PEB2086HV1.4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PEB2086HV1.4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PEB2086HV1.4?

For technical support, including PEB2086HV1.4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEB2086HV1.4 requirements.

6.How does Aetrix verify that PEB2086HV1.4 is sourced from the original manufacturer or authorized distributors?

All PEB2086HV1.4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEB2086HV1.4 meets industry standards.

7.What is the process for return or replacement of PEB2086HV1.4?

All PEB2086HV1.4 units undergo pre-shipment inspection (PSI). If there is an issue with PEB2086HV1.4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PEB2086HV1.4 part is unused and in its original packaging.

Return procedure for PEB2086HV1.4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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