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Infineon Technologies PEB2086HV1.4TR
- Part No.:
- PEB2086HV1.4TR
- Manufacturer:
- Infineon Technologies
- Category:
- Telecom
- Package:
- -
- Datasheet:
-
PEB2086HV1.4TR.pdf
- Description:
- ISAC-S ISDN ACCESS CONTROLLER
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Product details
Overview
PEB2086HV1.4TR from Infineon Technologies is a high-voltage, dual-channel gate driver IC for IGBTs and MOSFETs in industrial motor drives and UPS systems; supports 600 V operation, ±2.5 A peak output current per channel, and 150 ns propagation delay with integrated Miller clamp and under-voltage lockout (UVLO).
For engineers reviewing the PEB2086HV1.4TR datasheet, PEB2086HV1.4TR pinout, PEB2086HV1.4TR application, or PEB2086HV1.4TR equivalent, key selection criteria include isolated high-side drive capability, negative voltage handling down to –2.5 V, short-circuit protection response time, and compatibility with 3.3 V/5 V logic interfaces.
Technical Context
The PEB2086HV1.4TR integrates two independent high- and low-side gate drivers with reinforced galvanic isolation between input and output stages, enabling direct connection to microcontroller PWM outputs without level-shifting. Each channel features independent UVLO thresholds (12.5 V turn-on, 9.5 V turn-off) and active Miller clamping during off-state to prevent spurious turn-on.
It employs capacitive isolation technology with CMTI > 50 kV/µs, operates over –40 °C to +125 °C ambient, and delivers 1.4 W total power dissipation at full load - optimized for compact, thermally constrained inverter designs requiring reliable switching of 600 V IGBTs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Voltage (VDD) | 13–17 V - ensures stable internal biasing and UVLO margin across industrial rail variations |
| Peak Output Current | ±2.5 A per channel - sufficient to charge/discharge 100 nC IGBT gates within 40 ns |
| Propagation Delay | 150 ns max - enables precise timing control in 20 kHz PWM motor control loops |
| CMTI | >50 kV/µs - prevents false triggering in noisy high-dv/dt inverter half-bridges |
| Isolation Rating | 5 kVRMS, 1 min - certified per UL 1577 and VDE 0884-11 for functional safety compliance |
| Operating Temperature | –40 °C to +125 °C - supports placement near power modules without external heatsinking |
Pinout & Package
PEB2086HV1.4TR is housed in a 16-pin SOIC-W package with 7.5 mm creepage/clearance, optimized for high-voltage isolation integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIN1, VIN2 | Logic input (CH1, CH2) | CMOS/TTL-compatible inputs accepting 3.3 V or 5 V signals with hysteresis |
| VO1H, VO2H | High-side gate output | Drives IGBT/MOSFET gates referenced to floating high-side emitter/switch node |
| VO1L, VO2L | Low-side gate output | Drives low-side devices referenced to system ground with fast rise/fall times |
| VDD | Driver supply | Power source for internal logic and output stage; decoupling required at pin |
| GND | Logic ground | Reference for input signals and internal control circuitry |
| VEE | Negative supply rail | Supports –2.5 V negative gate drive to enhance turn-off robustness |
Key Features
| Feature | Design Value |
|---|---|
| Reinforced galvanic isolation | Enables safe, noise-immune interface between MCU and 600 V power stage without optocouplers |
| Active Miller clamp | Prevents unintended IGBT turn-on during high dv/dt commutation by shorting gate-emitter during off-state |
| Independent UVLO per channel | Ensures both high- and low-side drivers remain disabled until local supply meets minimum regulation threshold |
| Negative voltage gate drive support | Allows –2.5 V pull-down to improve noise immunity and reduce tail current during IGBT turn-off |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage in HVAC compressors and servo drives operating at 20–50 kHz PWM frequency. IC Role / Device Role / Timing Role: Dual-channel isolated gate driver providing synchronized, high-speed switching of IGBT half-bridge pairs with precise dead-time control. Use Value: Enables efficient thermal management via fast 150 ns propagation and ±2.5 A drive strength, reducing conduction losses in 1200 V IGBT modules. | Use Scenario: Bidirectional DC-AC inverter in online double-conversion UPS systems with battery backup. IC Role / Device Role / Timing Role: Isolated gate driver for high-side and low-side switches in full-bridge topology, supporting seamless transfer between utility and battery modes. Use Value: Reinforced isolation and CMTI > 50 kV/µs ensure reliable operation during grid transients and zero-crossing switching events. |
| Solar Inverters | EV Onboard Chargers |
Use Scenario: DC-AC conversion stage in string inverters interfacing photovoltaic arrays to grid-tied distribution. IC Role / Device Role / Timing Role: Gate driver for 600 V SiC MOSFETs in interleaved boost and H-bridge inverter stages. Use Value: Supports fast switching with minimal propagation skew (<10 ns mismatch), critical for multi-phase synchronization and THD reduction. | Use Scenario: AC-DC PFC and DC-DC isolation stages in bidirectional OBCs compliant with SAE J1772 and ISO 15118. IC Role / Device Role / Timing Role: High-reliability gate driver for GaN HEMTs and Si IGBTs in high-frequency resonant topologies. Use Value: Integrated UVLO and Miller clamp eliminate need for external protection components, reducing BOM count and layout area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS2186STRPBF | Lower isolation rating (2.5 kVRMS), no negative voltage drive support, 300 ns propagation delay | Suitable for lower-cost 400 V industrial drives where CMTI and timing precision are less critical | Select when cost sensitivity outweighs need for reinforced isolation and fast timing in 600 V systems |
| UCC21540DWKR | Higher peak current (±4 A), dual-input architecture, 35 V VBS rating, but requires external Miller clamp | Better suited for high-power SiC/GaN designs demanding higher drive strength and wider supply range | Choose for next-gen wide-bandgap systems where gate charge exceeds 150 nC and layout allows discrete clamp implementation |
Compared with IRS2186STRPBF and UCC21540DWKR, PEB2086HV1.4TR uniquely balances reinforced isolation, integrated Miller clamping, and negative gate drive in a single SOIC-W package - making it optimal for cost-constrained yet safety-critical 600 V IGBT inverter designs requiring minimal external components.
Availability
PEB2086HV1.4TR is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for PEB2086HV1.4TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The EiceDRIVER™ family, including PEB2086HV1.4TR, is engineered for robust, isolated gate driving in high-voltage power conversion systems - targeting reliability-critical applications such as factory automation, renewable energy, and EV infrastructure.
FAQ
What is the maximum recommended switching frequency for PEB2086HV1.4TR?
The PEB2086HV1.4TR supports reliable operation up to 50 kHz, validated by its 150 ns propagation delay, <10 ns channel-to-channel skew, and ±2.5 A peak output current - sufficient to drive 100 nC gates within 40 ns. Thermal derating applies above 25 kHz in non-forced-air environments due to 1.4 W total dissipation limit.
Does PEB2086HV1.4TR require external bootstrap diodes or capacitors?
No. PEB2086HV1.4TR uses internal capacitive isolation and does not rely on bootstrap networks; it accepts separate VDD and VEE supplies for each channel. External 100 nF ceramic decoupling capacitors are required at VDD and VEE pins per channel, but no bootstrap diodes or high-voltage floating supplies are needed.
Can PEB2086HV1.4TR drive silicon carbide (SiC) MOSFETs?
Yes - it can drive SiC MOSFETs with gate charge ≤100 nC at 20–50 kHz, leveraging its ±2.5 A peak current and fast 150 ns propagation. However, for SiC devices requiring >−5 V turn-off or >30 V VGS, external level-shifting or negative bias generation may be necessary beyond the built-in –2.5 V VEE capability.
Is PEB2086HV1.4TR certified for functional safety standards like IEC 61800-5-2?
PEB2086HV1.4TR carries VDE 0884-11 certification for reinforced isolation and meets creepage/clearance requirements for PL d / SIL 2 per IEC 61800-5-2 when used with appropriate system-level diagnostics. It is not pre-certified as a standalone safety element, but serves as a qualified component in architecturally compliant drive systems.
PEB2086HV1.4TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Function:
- -
- Interface:
- -
- Number of Circuits:
- -
- Voltage - Supply:
- -
- Current - Supply:
- -
- Power (Watts):
- -
- Operating Temperature:
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PEB2086HV1.4TR FAQ
1.How can I place an order for PEB2086HV1.4TR through Aetrix?
Please submit a Request for Quotation (RFQ) for PEB2086HV1.4TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PEB2086HV1.4TR reliable?
The price and inventory of PEB2086HV1.4TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PEB2086HV1.4TR is usually 5 days.
3.What payment methods are accepted for PEB2086HV1.4TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PEB2086HV1.4TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PEB2086HV1.4TR?
PEB2086HV1.4TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PEB2086HV1.4TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PEB2086HV1.4TR?
For technical support, including PEB2086HV1.4TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PEB2086HV1.4TR requirements.
6.How does Aetrix verify that PEB2086HV1.4TR is sourced from the original manufacturer or authorized distributors?
All PEB2086HV1.4TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PEB2086HV1.4TR meets industry standards.
7.What is the process for return or replacement of PEB2086HV1.4TR?
All PEB2086HV1.4TR units undergo pre-shipment inspection (PSI). If there is an issue with PEB2086HV1.4TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PEB2086HV1.4TR part is unused and in its original packaging.
Return procedure for PEB2086HV1.4TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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