NXP Semiconductors PH2369,112

Overview

PH2369,112 from NXP Semiconductors is an NPN bipolar junction transistor optimized for high-speed switching in low-voltage, low-current applications. It features V_CEO = 15 V, I_C = 200 mA (DC), f_T = 500 MHz, and t_off ≤ 35 ns under 100 mA drive conditions. It is commonly used in digital logic interface circuits, LED drivers, and small-signal relay drivers.

For engineers reviewing the PH2369,112 datasheet, PH2369,112 pinout, PH2369,112 application, or PH2369,112 equivalent, key selection criteria include its TO-92 (SOT54) through-hole package, low saturation voltages (V_CEsat ≤ 250 mV at I_C = 10 mA / I_B = 1 mA), and guaranteed h_FE range of 40–120 at V_CE = 1 V, I_C = 10 mA.

Technical Context

The PH2369,112 operates as a discrete NPN BJT with fixed-emitter configuration and base-controlled current amplification. Its design emphasizes fast transient response-evidenced by t_on ≤ 13 ns and t_off ≤ 35 ns under high-drive test conditions-and low thermal resistance (R_th(j-a) = 250 K/W on FR4).

It supports operation across −65 °C to +150 °C ambient and junction temperatures, with V_EBO = 4.5 V and C_c ≤ 4 pF, enabling stable performance in compact, cost-sensitive PCB layouts where minimal parasitic capacitance and predictable gain are required.

Key Specifications

Pinout & Package

PH2369,112 is housed in a plastic single-ended leaded (through-hole) TO-92 package, also designated SOT54 or SC-43A, with 3 leads and JEDEC-standard outline dimensions (L = 14.5 mm, D = 4.8 mm, E = 4.2 mm, e = 2.54 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with BC817-40,115 and 2N3904,113, PH2369,112 offers superior high-frequency switching (500 MHz f_T, ≤35 ns t_off) within its 15 V operational limit, making it preferred for compact, speed-critical 12 V digital interfaces where thermal budget is tight.

Availability

PH2369,112 is available at Aetrix Electronics and suitable for LED driver circuits, digital logic level shifting, and small-signal relay drivers requiring stable component supply and long-term obsolescence management.

Supply support for PH2369,112 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PH2369,112 belongs to NXP's legacy discrete transistor portfolio designed specifically for cost-effective, high-reliability through-hole switching in consumer and industrial control systems.

FAQ

What is the maximum collector-emitter voltage rating for PH2369,112?

The PH2369,112 has a maximum collector-emitter voltage (V_CEO) rating of 15 V under open-base conditions. This value is defined in the Absolute Maximum Ratings table and must not be exceeded to prevent device breakdown. Operation above this voltage-even briefly-may cause permanent damage. The PH2369,112 is therefore intended for use in low-voltage systems such as 12 V DC control rails or 5 V logic interfaces where margin is maintained below 15 V.

Does PH2369,112 support high-frequency switching applications?

Yes, PH2369,112 supports high-frequency switching with a transition frequency (f_T) of 500 MHz and measured turn-off time (t_off) as low as 20 ns at 10 mA drive and 35 ns at 100 mA drive. These parameters confirm suitability for digital signal routing, PWM fan control, and logic-level translation up to ~25 MHz. The PH2369,112 achieves this performance while maintaining low V_CEsat and controlled capacitance (C_c ≤ 4 pF), making it effective in edge-sensitive timing paths.

What is the DC current gain (h_FE) range for PH2369,112?

The PH2369,112 exhibits a DC current gain (h_FE) range of 40 to 120 when measured at V_CE = 1 V and I_C = 10 mA. At lower temperature (−55 °C), the minimum h_FE drops to 20, and at high current (I_C = 100 mA), the gain falls to ≥20. This specified range allows robust base resistor design for switching applications. All h_FE values are guaranteed per the PH2369,112 product data sheet revision dated 2004 Oct 11.

Is PH2369,112 available in surface-mount packaging?

No, PH2369,112 is exclusively offered in the through-hole TO-92 (SOT54/SC-43A) package. NXP does not manufacture or list a surface-mount variant of the PH2369,112. For SMT alternatives with similar electrical characteristics, consider BC817-40,115 (SOT-23) or MMBT3904 (SOT-23), though neither matches the PH2369,112's exact f_T or t_off performance. The PH2369,112 remains a dedicated through-hole solution.

What thermal considerations apply to PH2369,112 in PCB layout?

The PH2369,112 has a junction-to-ambient thermal resistance (R_th(j-a)) of 250 K/W when mounted on a standard FR4 PCB with no copper pour. To maintain T_j ≤ 150 °C, power dissipation must stay below 500 mW at 25 °C ambient. Layout best practices include using moderate copper area around the collector lead and avoiding enclosure hotspots. Derating is required above 25 °C ambient; for example, at 70 °C, max allowable P_tot drops to ~300 mW. This thermal behavior is documented for the PH2369,112 in its official NXP product data sheet.