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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors PH2369,116

Name: PH2369,116
Brand: NXP Semiconductors
SKU: PH2369,116
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PH2369,116

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: PH2369,116.pdf

Description:: TRANS NPN 15V 0.2A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PH2369,116 from NXP Semiconductors is an NPN bipolar junction transistor optimized for low-voltage, low-current switching applications, with V_CEO = 15 V, I_C = 200 mA, and f_T = 500 MHz. It operates in TO-92 (SOT54/SC-43A) package and delivers fast switching performance with t_on ≤ 13 ns and t_off ≤ 35 ns under high-drive conditions, commonly used in digital logic interface circuits and LED driver stages.

For engineers reviewing the PH2369,116 datasheet, PH2369,116 pinout, PH2369,116 application, or PH2369,116 equivalent, key selection considerations include its 15 V collector-emitter breakdown rating, 200 mA DC current capability, thermal resistance of 250 K/W on FR4, and verified operation across −55 °C to +150 °C ambient range.

Technical Context

The PH2369,116 is a general-purpose NPN silicon transistor designed for discrete switching-not linear amplification-with base-emitter and collector-base junctions rated for 4.5 V and 40 V respectively. Its DC current gain (h_FE) ranges from 20 to 120 depending on bias point, and saturation voltages are specified at V_CEsat ≤ 250 mV and V_BEsat = 700–850 mV under I_C = 10 mA / I_B = 1 mA.

Switching behavior is characterized using two test configurations: low-current (10 mA/3 mA drive) and high-current (100 mA/40 mA drive), yielding distinct timing profiles. Capacitances are tightly controlled-C_c ≤ 4 pF and C_e ≤ 4.5 pF-supporting stable high-frequency edge transitions without parasitic resonance in compact PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	15 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in low-voltage switch designs.
I_C (DC)	200 mA - Continuous collector current handling; suitable for driving small relays, LEDs, or logic-level translators.
f_T	500 MHz - Transition frequency confirming usable bandwidth beyond typical digital switching edges (e.g., <50 ns rise/fall).
V_CEsat	≤ 250 mV - Low saturation voltage minimizes conduction loss and self-heating during on-state operation.
R_th(j-a)	250 K/W - Thermal resistance on FR4 board; requires derating above ~25 °C ambient for sustained 500 mW dissipation.
t_off (high-drive)	≤ 35 ns - Turn-off time under I_Con = 100 mA / I_Boff = −20 mA; enables reliable operation up to ~10 MHz square-wave switching.

Pinout & Package

PH2369,116 is housed in a plastic single-ended leaded through-hole package designated TO-92 (JEDEC TO-92 variant), also known as SOT54 or SC-43A, with 3 leads and standard 2.54 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current exit node; typically tied to ground or low-side return path in common-emitter switch configuration.
2	Base	Control input; requires current-limited drive (e.g., via series resistor) to achieve full saturation without overdrive damage.
3	Collector	Current entry node; connects to load and positive supply rail in low-side switching topology.

Key Features

Feature	Design Value
Low-voltage switching	Rated for V_CEO = 15 V and V_EBO = 4.5 V - compatible with 3.3 V and 5 V logic families without level-shifting.
High-speed turn-on/off	t_on ≤ 13 ns and t_off ≤ 35 ns under high-drive conditions - supports clean signal edge integrity in pulse-width modulation circuits.
Stable gain over temperature	h_FE ≥ 20 at −55 °C and ≥ 40 at 25 °C - ensures predictable drive requirements across industrial temperature range.
Low junction-to-ambient thermal resistance	R_th(j-a) = 250 K/W on FR4 - enables 500 mW power dissipation at modest ambient temperatures without heatsinking.

Applications

LED Driver Stage	Digital Logic Interface
Use Scenario: Driving multiplexed indicator LEDs in microcontroller-based instrumentation panels with 3.3 V or 5 V I/O. IC Role / Device Role / Timing Role: Low-side NPN switch controlling current path to LED anodes tied to regulated supply. Use Value: V_CEsat ≤ 250 mV ensures minimal voltage drop and consistent brightness; f_T = 500 MHz prevents distortion during rapid PWM dimming.	Use Scenario: Level translation between 3.3 V FPGA outputs and 5 V peripheral enable lines in embedded control systems. IC Role / Device Role / Timing Role: Single-transistor inverter/buffer providing voltage-compatible signal inversion with sub-15 ns propagation delay. Use Value: Fast t_on/t_off and low C_c/C_e (<4.5 pF) preserve signal integrity at data rates up to 10 Mbps.
Small Relay Driver	Pulse Generator Output Stage
Use Scenario: Activating 5 V, 100 mA coil relays in programmable logic controllers where microcontroller GPIO cannot source sufficient current. IC Role / Device Role / Timing Role: Saturated switch interfacing MCU output to relay coil with flyback diode protection. Use Value: I_C = 200 mA rating and robust storage time (t_s ≤ 10 ns) prevent contact chatter during rapid on/off cycling.	Use Scenario: Final stage in a 50 Ω RF pulse generator delivering clean 100 ns pulses into 50 Ω loads for test equipment calibration. IC Role / Device Role / Timing Role: High-speed switch gating a DC bias to produce defined pulse edges with minimal overshoot. Use Value: Verified 35 ns t_off and 13 ns t_on under 100 mA drive ensure accurate pulse width fidelity at repetition rates >5 MHz.

LED Driver Stage

Digital Logic Interface

Use Scenario: Driving multiplexed indicator LEDs in microcontroller-based instrumentation panels with 3.3 V or 5 V I/O.

IC Role / Device Role / Timing Role: Low-side NPN switch controlling current path to LED anodes tied to regulated supply.

Use Value: V_CEsat ≤ 250 mV ensures minimal voltage drop and consistent brightness; f_T = 500 MHz prevents distortion during rapid PWM dimming.

Use Scenario: Level translation between 3.3 V FPGA outputs and 5 V peripheral enable lines in embedded control systems.

IC Role / Device Role / Timing Role: Single-transistor inverter/buffer providing voltage-compatible signal inversion with sub-15 ns propagation delay.

Use Value: Fast t_on/t_off and low C_c/C_e (<4.5 pF) preserve signal integrity at data rates up to 10 Mbps.

Small Relay Driver

Pulse Generator Output Stage

Use Scenario: Activating 5 V, 100 mA coil relays in programmable logic controllers where microcontroller GPIO cannot source sufficient current.

IC Role / Device Role / Timing Role: Saturated switch interfacing MCU output to relay coil with flyback diode protection.

Use Value: I_C = 200 mA rating and robust storage time (t_s ≤ 10 ns) prevent contact chatter during rapid on/off cycling.

Use Scenario: Final stage in a 50 Ω RF pulse generator delivering clean 100 ns pulses into 50 Ω loads for test equipment calibration.

IC Role / Device Role / Timing Role: High-speed switch gating a DC bias to produce defined pulse edges with minimal overshoot.

Use Value: Verified 35 ns t_off and 13 ns t_on under 100 mA drive ensure accurate pulse width fidelity at repetition rates >5 MHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC817-40,115	SOT-23 surface-mount package; higher h_FE (250–630); same V_CEO = 45 V but lower f_T (~100 MHz).	Not pin-compatible; requires PCB redesign; better suited for space-constrained SMT designs needing higher DC gain.	Select when footprint miniaturization and higher current gain outweigh need for through-hole mounting and speed.
2N3904,116	Same TO-92 package; identical pinout; lower I_C = 200 mA but V_CEO = 40 V; slower f_T ≈ 300 MHz; higher V_CEsat (300 mV typ).	Drop-in replacement in many legacy designs; less suitable for high-speed PWM due to slower switching and higher saturation loss.	Choose for cost-sensitive, non-critical switching where voltage margin matters more than speed or efficiency.

Compared with BC817-40,115 and 2N3904,116, the PH2369,116 uniquely balances high f_T, low V_CEsat, and through-hole reliability-making it optimal for industrial control modules requiring both speed and mechanical robustness without SMT rework.

Availability

PH2369,116 is available at Aetrix Electronics and suitable for LED driver stages, digital logic interfaces, and small relay drivers requiring stable component supply and long-term industrial availability.

Supply support for PH2369,116 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PH2369,116 belongs to NXP's legacy discrete transistor portfolio designed specifically for cost-effective, high-reliability through-hole switching in industrial control, instrumentation, and power management subsystems.

FAQ

What is the maximum collector-emitter voltage rating for PH2369,116?

The PH2369,116 has a maximum collector-emitter voltage (V_CEO) rating of 15 V with the base open. This value is specified in the Absolute Maximum Ratings table and must not be exceeded to avoid permanent device damage. Operation near this limit requires careful attention to transient spikes and PCB layout parasitics, especially in inductive load switching applications involving the PH2369,116.

Does PH2369,116 support operation at elevated temperatures?

Yes, the PH2369,116 is rated for junction temperatures up to 150 °C and ambient temperatures from −65 °C to +150 °C. Its h_FE remains functional down to −55 °C (minimum 20), and thermal resistance R_th(j-a) = 250 K/W is measured on FR4. For continuous operation above 25 °C ambient, power dissipation must be derated per the datasheet curve to maintain safe junction temperature in the PH2369,116.

What are the base drive requirements to fully saturate PH2369,116?

To achieve full saturation (V_CEsat ≤ 250 mV), the PH2369,116 requires I_B = 1 mA when I_C = 10 mA, corresponding to a minimum h_FE of 10. For higher currents like 100 mA, a base current of ≥4 mA is recommended. The PH2369,116 base-emitter saturation voltage is 700–850 mV, so drive circuitry must supply sufficient forward bias while limiting peak base current to ≤100 mA per Absolute Maximum Ratings.

Is PH2369,116 pin-compatible with other TO-92 NPN transistors?

The PH2369,116 uses standard TO-92 pinout (E-B-C, leads 1-2-3), matching industry convention for most 3-lead through-hole NPN transistors including 2N3904 and BC547. However, electrical parameters differ significantly-especially V_CEO, f_T, and V_CEsat-so direct substitution requires validation of switching speed, gain, and voltage margin in the target circuit using the PH2369,116.

Can PH2369,116 be used in RF amplifier applications?

No, the PH2369,116 is explicitly characterized and qualified as a switching transistor-not an RF amplifier device. While its f_T = 500 MHz suggests theoretical high-frequency capability, the datasheet provides no small-signal gain (h_fe), noise figure, or stability data required for RF design. The PH2369,116 lacks matching networks, bias optimization, and RF-specific packaging; use only in digital switching or pulse-gating roles per its documented specifications.

PH2369,116 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 15 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 400nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 10mA, 1V

Power - Max:: 500 mW

Frequency - Transition:: 500MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

PH2369,116 FAQ

1.How can I place an order for PH2369,116 through Aetrix?

Please submit a Request for Quotation (RFQ) for PH2369,116 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PH2369,116 reliable?

The price and inventory of PH2369,116 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH2369,116 is usually 5 days.

3.What payment methods are accepted for PH2369,116?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH2369,116 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PH2369,116?

PH2369,116 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PH2369,116 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PH2369,116?

For technical support, including PH2369,116 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH2369,116 requirements.

6.How does Aetrix verify that PH2369,116 is sourced from the original manufacturer or authorized distributors?

All PH2369,116 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH2369,116 meets industry standards.

7.What is the process for return or replacement of PH2369,116?

All PH2369,116 units undergo pre-shipment inspection (PSI). If there is an issue with PH2369,116, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PH2369,116 part is unused and in its original packaging.

Return procedure for PH2369,116:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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