NXP Semiconductors PH2369,126

Overview

PH2369,126 from NXP Semiconductors is an NPN bipolar junction transistor optimized for high-speed switching in low-voltage, low-current applications. It features V_CEO = 15 V, I_C = 200 mA DC, f_T = 500 MHz, and t_off ≤ 35 ns under 100 mA test conditions. It is commonly used in digital logic interface circuits, LED drivers, and small-signal relay drivers.

For engineers reviewing the PH2369,126 datasheet, PH2369,126 pinout, PH2369,126 application, or PH2369,126 equivalent, key selection criteria include its TO-92 (SOT54) through-hole package, guaranteed h_FE range of 40–120 at 10 mA/1 V, low V_CEsat ≤ 250 mV, and thermal resistance R_th(j-a) = 250 K/W on FR4 PCB.

Technical Context

This device operates as a discrete NPN switch with fixed gain characteristics and no integrated biasing or protection. Its design emphasizes fast transient response-evidenced by t_on ≤ 13 ns and t_off ≤ 35 ns under high-drive conditions-and low capacitance (C_c ≤ 4 pF, C_e ≤ 4.5 pF), enabling reliable operation in pulse-width modulation and clocked logic interfaces.

The PH2369,126 is rated for T_j ≤ 150 °C and T_amb from −65 °C to +150 °C, with absolute maximum ratings including V_CBO = 40 V and P_tot = 500 mW at T_amb ≤ 25 °C. Its base-emitter saturation voltage (700–850 mV) and collector-emitter saturation voltage (≤250 mV) are specified at I_C = 10 mA / I_B = 1 mA.

Key Specifications

Pinout & Package

PH2369,126 is housed in a plastic single-ended leaded (through-hole) TO-92 package, also designated SOT54 or SC-43A, with 3 leads and standard lead spacing (e = 2.54 mm). The package is compatible with wave soldering and manual prototyping.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with BC547B,112 and MPSA18,116, the PH2369,126 offers superior high-frequency performance (500 MHz f_T, ≤35 ns t_off) within its 15 V/200 mA operating window, making it optimal for compact, speed-sensitive low-voltage switching where thermal budget is constrained by its 250 K/W R_th(j-a).

Availability

PH2369,126 is available at Aetrix Electronics and suitable for LED driver circuits, digital logic level shifting, and small-signal relay drivers requiring stable component supply and long-term manufacturability.

Supply support for PH2369,126 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The PH2369,126 belongs to NXP's legacy discrete transistor portfolio designed specifically for cost-sensitive, high-volume switching applications in consumer electronics and industrial controls where reliability, consistency, and TO-92 compatibility are essential.

FAQ

What is the maximum continuous collector current for PH2369,126?

The PH2369,126 has a maximum DC collector current (I_C) rating of 200 mA at T_amb ≤ 25 °C. This value decreases with rising ambient temperature due to thermal derating; at 75 °C ambient, usable I_C drops to approximately 120 mA based on its 500 mW total power dissipation limit and 250 K/W thermal resistance. Always verify actual junction temperature in final layout.

Is PH2369,126 pin-compatible with BC547 series transistors?

Yes, PH2369,126 uses the standard TO-92 (SOT54) pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - identical to BC547B,112 and most common TO-92 NPN transistors. However, electrical parameters differ significantly: PH2369,126 offers higher f_T (500 MHz vs 300 MHz) and lower V_CEO (15 V vs 45 V), so functional substitution requires circuit validation.

What is the typical base-emitter saturation voltage of PH2369,126?

The PH2369,126 exhibits a typical V_BEsat of 700–850 mV when operated at I_C = 10 mA and I_B = 1 mA. This narrow range supports predictable base resistor calculation for saturation across temperature and process variation. At lower currents (e.g., I_C = 2 mA), V_BEsat may fall to ~650 mV, while at higher drive levels it remains stable within specification.

Can PH2369,126 be used in linear amplifier applications?

No - the PH2369,126 is explicitly characterized and qualified as a switching transistor. Its h_FE is specified only at saturation and switching test points (e.g., V_CE = 1 V), not across the full active region. Linearity, noise, and thermal stability are not guaranteed; dedicated general-purpose amplifiers like BC549 or PN2222A are recommended for analog gain stages.

Does PH2369,126 have built-in ESD protection?

No, the PH2369,126 does not incorporate on-die ESD protection structures. Its absolute maximum ratings specify only V_EBO = 4.5 V, indicating sensitivity to base-emitter overvoltage. In systems exposed to handling or system-level ESD, external protection (e.g., series base resistor + clamping diode) is strongly advised to prevent damage during assembly or field operation.