Diodes Incorporated PI3B16224BE

Overview

PI3B16224BE from Pericom Semiconductor is a 3.3V, 12-bit to 24-bit bidirectional analog bus switch with 5Ω typical R_ON, 4.5ns max propagation delay, and –40°C to +85°C industrial temperature range. It enables high-speed memory bus switching in DDR SDRAM DIMM modules by routing 72-bit data paths between dual memory banks.

For engineers reviewing the PI3B16224BE datasheet, PI3B16224BE pinout, PI3B16224BE application, or PI3B16224BE equivalent, key selection criteria include on-resistance matching across channels, rail-to-rail logic compatibility at 3.3V supply, pulldown termination on unconnected B ports, and BQSOP-40 thermal performance under sustained 120mA per channel load.

Technical Context

The PI3B16224BE implements a CMOS-based analog switch matrix with make-before-break action, supporting bidirectional signal flow between A-side (12-channel) and B-side (24-channel) buses. Its architecture uses independent gate control per switch pair (A1/1B1/2B1, etc.) and integrates 500Ω pulldown resistors on all B-port terminals.

It operates within a strict 3.0V–3.6V V_CC range and tolerates input voltages up to +4.6V, enabling safe interfacing with higher-voltage logic without level shifters. Propagation delay is dominated by RC time constant (R_ON × C_L), not internal logic, yielding near-zero intrinsic delay - verified at ≤0.25ns for 50pF load.

Key Specifications

Pinout & Package

PI3B16224BE is housed in a Pb-free, green-compliant 40-pin BQSOP (Body: 10.16mm × 7.49mm, height: 2.65mm) with standard 0.635mm lead pitch and exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bus switch applications.

Compared with SN74CBT16212DGGR and PI3CH480E, PI3B16224BE uniquely combines 12:24 channel ratio, built-in 500Ω B-port termination, and make-before-break action - making it the only solution qualified for hot-pluggable DDR DIMM switching without supplemental circuitry.

Availability

PI3B16224BE is available at Aetrix Electronics and suitable for DDR SDRAM memory switching, dual-DIMM channel multiplexing, and hot-swappable memory module applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for PI3B16224BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Pericom Semiconductor (acquired by Diodes Incorporated in 2016) specialized in high-speed interface and signal-integrity solutions for memory, networking, and computing markets.

The PI3B16224BE belongs to Pericom's NanoSwitch™ bus switch product line, engineered specifically for low-latency, low-R_ON memory interconnect in DDR1/DDR2 systems with stringent timing and thermal constraints.

FAQ

Is PI3B16224BE pin-compatible with PI3B16224B?

Yes - PI3B16224BE is the Pb-free, green-compliant version of PI3B16224B. Both share identical pinout, electrical specifications, and mechanical dimensions in the 40-pin BQSOP package. The 'E' suffix denotes environmental compliance only; no functional or layout changes are introduced.

Can PI3B16224BE operate with V_CC = 2.5V?

No - the device is specified only for 3.0V to 3.6V V_CC. At 2.5V, R_ON increases significantly (>25Ω), propagation delay exceeds specification, and DC characteristics (e.g., I_OH/I_OL) fall outside guaranteed limits. Operation below 3.0V is not supported.

What is the purpose of the 500Ω pulldown on B-port pins?

The 500Ω pulldown ensures B-port pins default to logic LOW when disconnected - preventing floating states that cause increased EMI, false triggering of downstream receivers, or undefined switching behavior during hot-plug events or partial configuration.

Does PI3B16224BE support hot-swap sequencing?

Yes - its absolute maximum rating allows input voltages up to +4.6V independent of V_CC, and it specifies proper power sequencing (V_CC/GND first). Combined with B-port pulldowns and make-before-break action, it meets JEDEC hot-swap requirements for DDR memory modules.