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Nexperia USA Inc. PMBS3906,215

Part No.:
PMBS3906,215
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPMBS3906,215.pdf
Description:
TRANS PNP 40V 0.1A TO-236AB
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,194

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Product details

Overview

PMBS3906,215 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT23 (TO-236AB) package, rated for −40 V VCEO, −100 mA IC, and DC current gain (hFE) of 100–300 at −10 mA collector current. It serves as a compact, low-power switching or amplification device in space-constrained consumer and industrial signal-path circuits.

For engineers reviewing the PMBS3906,215 datasheet, PMBS3906,215 pinout, PMBS3906,215 application, or PMBS3906,215 equivalent, key selection criteria include verified PNP polarity, SOT23 footprint compatibility, guaranteed −40 V breakdown rating, −100 mA continuous current capability, and hFE consistency across production lots.

Technical Context

This discrete PNP BJT operates in active or saturation mode with base-emitter forward bias enabling controlled collector current flow. Its design supports linear amplification at low signal levels and robust on/off switching under pulsed or DC conditions up to 250 mW dissipation.

Thermal resistance of 500 K/W (junction-to-ambient, FR4 PCB) and junction temperature limit of 150 °C define its thermal envelope. Electrical behavior is characterized at 25 °C ambient, with hFE, VCE(sat), and fT = 150 MHz validated under specified test conditions including pulse width ≤ 300 µs and duty cycle ≤ 0.02.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −40 V - Maximum safe collector-emitter voltage with base open; defines off-state blocking capability in switching applications.
IC −100 mA - Continuous DC collector current rating; sets upper bound for load-driving capacity in steady-state operation.
hFE 100–300 - DC current gain at VCE = −1 V, IC = −10 mA; determines required base drive for target collector current.
VCE(sat) −400 mV max at IC = −50 mA, IB = −5 mA - Saturation voltage defining conduction loss and heat generation during switch-on state.
fT 150 MHz - Transition frequency at VCE = −20 V, IC = −10 mA; indicates usable bandwidth for small-signal amplification.
Ptot 250 mW - Total power dissipation limit at Tamb ≤ 25 °C; constrains thermal design when operating near maximum ratings.

Pinout & Package

Package: SOT23 (TO-236AB), surface-mount plastic package with 3 leads, 1.4 mm × 2.9 mm footprint, 1.1 mm height, and standard JEDEC-compliant soldering profiles (reflow and wave).

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control terminal; forward-biased relative to emitter to enable PNP conduction; requires negative current injection for turn-on.
2 Emitter (E) Current source terminal in PNP configuration; connected to higher potential rail; establishes reference for base-emitter voltage drop.
3 Collector (C) Current sink terminal; carries load current to ground or lower-potential node; voltage swing limited by VCEO rating.

Key Features

Feature Design Value
100 mA continuous collector current Supports medium-current digital logic interfacing and sensor signal buffering without external current boosting.
−40 V VCEO rating Enables use in 24 V industrial control rails and automotive body electronics where transient overvoltage immunity is required.
hFE = 100–300 at −10 mA Provides predictable base drive requirements across manufacturing lots, simplifying bias network design for amplifiers and switches.
fT = 150 MHz Permits stable small-signal amplification up to mid-VHF range, suitable for RF front-end preamplifiers and oscillator buffers.

Applications

LED Driver Circuit Level-Shifting Interface

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins with inverted logic control.

IC Role / Device Role / Timing Role: PNP switch configured in common-emitter topology, sinking current from LED anode to ground when base is pulled low.

Use Value: Low VCE(sat) (≤ −400 mV) minimizes voltage drop across transistor, preserving LED forward voltage margin and reducing thermal load.

Use Scenario: Translating 1.8 V logic outputs to interface with 5 V legacy peripherals requiring active-low enable signals.

IC Role / Device Role / Timing Role: Voltage-level translator using saturated PNP switch to pull 5 V line low when input is high.

Use Value: Verified hFE range ensures reliable saturation with minimal base current, eliminating need for additional buffer stages.

Low-Power Sensor Amplifier Power-Rail Sequencing Control

Use Scenario: Amplifying weak thermistor or photodiode signals in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: Small-signal common-emitter amplifier biased in active region for linear gain at sub-mA quiescent current.

Use Value: fT = 150 MHz and low noise figure (4 dB) support clean amplification of signals up to ~10 kHz without added distortion.

Use Scenario: Enabling 12 V auxiliary supply only after main 5 V rail stabilizes, using RC-delayed base drive.

IC Role / Device Role / Timing Role: High-side switch controlling power-enable line to downstream ICs via emitter-follower configuration.

Use Value: −40 V VCEO and −5 V VEBO ensure safe operation during rail sequencing transients and reverse-bias conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MMBT3906LT1G Same SOT23 package, but hFE min = 100 at −10 mA; VCEO = −40 V; VCE(sat) = −400 mV max at −50 mA, same test conditions. Identical functional role; minor parametric spread in hFE distribution affects base resistor tolerance sensitivity. Select when sourcing from ON Semiconductor distribution channels or requiring alternate qualification documentation.
BC807-16,215 Higher hFE (160–230 min), same VCEO and IC; slightly higher VCE(sat) (−700 mV max at −100 mA). Better suited for low-base-drive applications but less efficient in high-current saturation due to higher conduction loss. Prefer for designs prioritizing gain stability over power efficiency at full rated current.

Compared with MMBT3906LT1G and BC807-16,215, PMBS3906,215 offers tighter hFE consistency (100–300 vs. 100 min or 160–230), lower VCE(sat) at mid-currents, and optimized thermal resistance for FR4 PCB mounting-making it preferable for precision biasing and thermally constrained layouts.

Availability

PMBS3906,215 is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, low-power sensor amplifiers, and power-rail sequencing control requiring stable component supply and consistent parametric performance across production batches.

Supply support for PMBS3906,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient discrete, logic, and MOSFET devices, with roots in Philips Semiconductors and headquartered in Nijmegen, Netherlands.

The PMBS3906,215 belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-volume applications demanding reliability, standardized SOT23 packaging, and guaranteed parametric limits across industrial temperature ranges.

FAQ

Is PMBS3906,215 suitable for automotive applications?

No. PMBS3906,215 is not automotive-qualified per Nexperia's official documentation. It lacks AEC-Q101 stress testing, extended temperature validation beyond −65 °C to +150 °C, and automotive-specific failure reporting. Use only in consumer, industrial, or commercial systems where automotive-grade reliability is not mandated.

What is the maximum peak collector current for PMBS3906,215?

The absolute maximum peak collector current is −200 mA, defined under pulsed conditions (pulse width ≤ 300 µs, duty cycle ≤ 0.02) per IEC 60134 limiting values. Continuous operation must remain within the −100 mA DC rating to avoid thermal runaway or parameter shift.

How does the SOT23 package affect thermal performance?

Mounted on FR4 PCB, PMBS3906,215 exhibits Rth(j-a) = 500 K/W, meaning a 250 mW dissipation raises junction temperature by 125 K above ambient. Layout practices-such as copper pour under the pad and thermal vias-must be applied to maintain Tj ≤ 150 °C in sustained operation.

Can PMBS3906,215 replace PMBS3904 in a circuit?

No-PMBS3904 is its NPN complement, with opposite polarity, different biasing requirements, and inverted current flow direction. Swapping them without circuit redesign causes functional failure. Use only as direct PNP replacement; for NPN functionality, select PMBS3904 or equivalent NPN transistors.

PMBS3906,215 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Power - Max:
250 mW
Frequency - Transition:
150MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PMBS3906,215 FAQ

1.How can I place an order for PMBS3906,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMBS3906,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMBS3906,215 reliable?

The price and inventory of PMBS3906,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMBS3906,215 is usually 5 days.

3.What payment methods are accepted for PMBS3906,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMBS3906,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMBS3906,215?

PMBS3906,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMBS3906,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMBS3906,215?

For technical support, including PMBS3906,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMBS3906,215 requirements.

6.How does Aetrix verify that PMBS3906,215 is sourced from the original manufacturer or authorized distributors?

All PMBS3906,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMBS3906,215 meets industry standards.

7.What is the process for return or replacement of PMBS3906,215?

All PMBS3906,215 units undergo pre-shipment inspection (PSI). If there is an issue with PMBS3906,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMBS3906,215 part is unused and in its original packaging.

Return procedure for PMBS3906,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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