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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PMBT2369,235

Name: PMBT2369,235
Brand: Nexperia USA Inc.
SKU: PMBT2369,235
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMBT2369,235

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PMBT2369,235.pdf

Description:: TRANS NPN 15V 0.2A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMBT2369,235 from Nexperia is an NPN silicon switching transistor in SOT23 package, rated for 15 V V_CEO, 200 mA I_C, and 500 MHz f_T, optimized for high-speed digital switching in portable battery-powered systems such as load switching, LED drivers, and logic-level translation.

For engineers reviewing the PMBT2369,235 datasheet, PMBT2369,235 pinout, PMBT2369,235 application, or PMBT2369,235 equivalent, key selection criteria include its 10 ns turn-on time, 250 mV V_CEsat at 10 mA/1 mA drive, low 4 pF C_c, and guaranteed h_FE range of 40–120 at 10 mA/1 V - all critical for low-power, fast-edge signal control.

Technical Context

The PMBT2369,235 operates as a discrete NPN bipolar junction transistor with fixed emitter-grounded configuration. Its DC current gain (h_FE) is specified from 40 to 120 at I_C = 10 mA and V_CE = 1 V, and it maintains usable gain down to −55 °C ambient.

Switching performance is defined by measured times: 10 ns t_on, 4 ns t_d, 6 ns t_r, 20 ns t_off, and 10 ns t_s, under standardized test conditions (I_Con = 10 mA, I_Bon = 3 mA, I_Boff = −1.5 mA), confirming suitability for sub-100 ns digital edge control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	15 V - Maximum collector-emitter voltage before breakdown; sets safe operating limit for 3.3 V and 5 V logic-driven loads.
I_C (DC)	200 mA - Continuous collector current capacity; supports driving small relays, LEDs, or logic gates without thermal derating at T_amb ≤ 25 °C.
f_T	500 MHz - Transition frequency at I_C = 10 mA, V_CE = 10 V; confirms high-frequency switching capability beyond typical digital clock rates.
V_CEsat	250 mV max at I_C = 10 mA, I_B = 1 mA - Low saturation voltage minimizes power loss and self-heating in on-state switching applications.
C_c	4 pF - Collector capacitance at V_CB = 5 V; enables fast edge response and reduces capacitive loading on driving stages.
t_off	20 ns - Turn-off time between 10%–90% levels; ensures clean signal termination in pulse-width modulated (PWM) control circuits.

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, dimensions per JEDEC MO-215: 2.9 mm × 1.3 mm × 1.0 mm (L × W × H), with 0.95 mm lead pitch and 0.48 mm lead width.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires ~1 mA base drive to saturate at 10 mA collector load, enabling direct microcontroller GPIO interface.
2	Emitter	Common reference terminal; internally connected to PCB ground plane in standard switch configurations, defining current return path.
3	Collector	Output current sink node; connects to load (e.g., LED anode or relay coil) and supply rail via pull-up; handles full switched load current.

Key Features

Feature	Design Value
High-speed switching	20 ns turn-off and 10 ns turn-on enable reliable operation in 10–50 MHz digital control loops and PWM dimming.
Low V_CEsat	250 mV maximum at rated I_C/I_B reduces conduction loss to <1 mW at 10 mA, critical for battery runtime extension.
Guaranteed h_FE range	40–120 at 10 mA/1 V ensures predictable base drive requirements across production lots and temperature extremes.
Low junction-to-ambient R_th	500 K/W allows 250 mW P_tot dissipation with minimal thermal rise on FR4 PCBs, eliminating need for heatsinking.

Applications

Portable LED Backlight Control

Microcontroller GPIO Load Switching

Use Scenario: Driving white LEDs in handheld displays using PWM at 1–10 kHz.

IC Role / Device Role / Timing Role: NPN switch sinking LED cathode current; operates in saturated on/off states with <20 ns transition.

Use Value: 250 mV V_CEsat limits voltage drop across transistor, preserving forward voltage margin for LED string efficiency.

Use Scenario: Enabling/disabling peripheral ICs (e.g., sensors, transceivers) via MCU output pins.

IC Role / Device Role / Timing Role: Level-shifting and current amplification stage; interfaces 3.3 V GPIO to 5 V or higher load rails.

Use Value: Guaranteed h_FE ≥40 ensures full saturation with ≤1 mA base current, reducing MCU pin loading and leakage risk.

Low-Voltage Logic-Level Translation

Small-Signal Pulse Generation

Use Scenario: Converting 1.8 V logic outputs to 3.3 V compatible signals in mixed-voltage SoC subsystems.

IC Role / Device Role / Timing Role: Active pull-down switch in open-collector configuration with external pull-up resistor.

Use Value: 4 pF C_c and 500 MHz f_T preserve signal integrity up to 25 MHz edge rates without overshoot or delay distortion.

Use Scenario: Generating precise timing pulses for sensor trigger or test equipment synchronization.

IC Role / Device Role / Timing Role: Fast edge generator with controlled rise/fall (6 ns/10 ns) and minimal storage time (10 ns).

Use Value: 20 ns t_off and 10 ns t_s prevent pulse broadening and ensure accurate duty cycle fidelity in burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC846B,215	V_CEO = 65 V, h_FE = 200–450, f_T = 100 MHz - higher voltage rating but lower speed and higher gain spread.	Better suited for general-purpose amplification or higher-voltage switching (>15 V); less optimal for <10 ns edge control.	Select when robustness against voltage transients outweighs speed requirements.
MMBT2222ALT1G	V_CEO = 40 V, I_C = 600 mA, t_off = 60 ns - higher current but slower switching and larger package (SOT-23 vs SOT-23).	Preferred for medium-current loads (e.g., solenoids, fans) where 200 mA is insufficient, but not for high-frequency PWM.	Choose when load current exceeds 200 mA and switching speed below 5 MHz is acceptable.

Compared with BC846B,215 and MMBT2222ALT1G, the PMBT2369,235 uniquely balances 500 MHz f_T, 20 ns t_off, and 250 mV V_CEsat in the smallest SOT23 footprint - making it the optimal choice for space-constrained, battery-sensitive, high-edge-rate digital switching.

Availability

PMBT2369,235 is available at Aetrix Electronics and suitable for portable LED drivers, microcontroller peripheral enable circuits, and low-voltage logic-level translation requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for PMBT2369,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete semiconductors, formed in 2017 from the former NXP Standard Products division, specializing in high-volume, high-reliability components for automotive, industrial, and consumer markets.

The PMBT2369,235 belongs to Nexperia's "General Purpose Transistors" product line, engineered specifically for cost-effective, high-speed digital switching in space- and power-constrained portable electronics.

FAQ

Is PMBT2369,235 RoHS compliant and halogen-free?

Yes. PMBT2369,235 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The device carries Nexperia's standard green marking and complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life at ≤30 °C/85% RH.

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current is 100 mA, but for continuous DC operation, the recommended I_B limit is 5 mA to maintain reliability and avoid localized heating. At I_C = 10 mA, typical I_B = 1 mA achieves full saturation with margin, aligning with the 250 mV V_CEsat specification.

Can PMBT2369,235 be used in linear amplifier configurations?

No. The PMBT2369,235 is characterized and qualified exclusively for switching operation. Its h_FE variation over V_CE and I_C, lack of linearity data, and absence of small-signal parameters (e.g., h_fe, f_max) in the datasheet confirm it is not intended for analog amplification.

Does the SOT23 package support reflow soldering per IPC-J-STD-020?

Yes. The PMBT2369,235 SOT23 package is qualified for standard lead-free reflow profiles (peak temperature 260 °C, 20–40 sec above 217 °C), with MSL1 rating and no preconditioning required. Thermal resistance data assumes mounting on FR4 PCB with minimum 10 mm² copper pad per lead.

PMBT2369,235 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 15 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 400nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 10mA, 1V

Power - Max:: 250 mW

Frequency - Transition:: 500MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PMBT2369,235 FAQ

1.How can I place an order for PMBT2369,235 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMBT2369,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMBT2369,235 reliable?

The price and inventory of PMBT2369,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMBT2369,235 is usually 5 days.

3.What payment methods are accepted for PMBT2369,235?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMBT2369,235 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMBT2369,235?

PMBT2369,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMBT2369,235 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMBT2369,235?

For technical support, including PMBT2369,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMBT2369,235 requirements.

6.How does Aetrix verify that PMBT2369,235 is sourced from the original manufacturer or authorized distributors?

All PMBT2369,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMBT2369,235 meets industry standards.

7.What is the process for return or replacement of PMBT2369,235?

All PMBT2369,235 units undergo pre-shipment inspection (PSI). If there is an issue with PMBT2369,235, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMBT2369,235 part is unused and in its original packaging.

Return procedure for PMBT2369,235:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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