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Nexperia USA Inc. PMBT4403YSX

Part No.:
PMBT4403YSX
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixPMBT4403YSX.pdf
Description:
TRANS PNP 40V 0.6A 6-TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,317

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Product details

Overview

PMBT4403YS from Nexperia is a double PNP bipolar junction transistor in SOT363-3 (TSSOP6) package, rated for −40 V VCEO, −600 mA IC, and AEC-Q101 qualified for automotive use. It delivers DC current gain (hFE) of 100–300 at −2 V VCE/−150 mA IC, with VCE(sat) ≤ −750 mV at −500 mA/−50 mA drive, enabling compact dual-channel switching in space-constrained PCB layouts.

For engineers reviewing the PMBT4403YS datasheet, PMBT4403YS pinout, PMBT4403YS application, or PMBT4403YS equivalent, this device serves as a verified dual-PNP solution for automotive body control modules, LED driver current sinks, and redundant logic-level translators where thermal efficiency, footprint minimization, and automotive-grade reliability are critical selection criteria.

Technical Context

This double PNP transistor integrates two independent high-gain PNP BJTs in a single TSSOP6 package, sharing no internal connection between devices. Each transistor supports continuous collector currents up to −600 mA and peak pulses to −800 mA, with base-emitter saturation voltage ≤ −1.3 V under heavy drive conditions.

Thermal performance is defined for two mounting configurations: standard FR4 footprint (Rth(j-a) = 500 K/W) and enhanced pad layout (Rth(j-a) = 227 K/W), enabling design flexibility across cost-sensitive and thermally demanding applications without derating penalties.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −40 V - Maximum safe collector-emitter voltage before breakdown; sets upper rail limit for 24 V automotive systems with transients.
IC −600 mA - Continuous collector current per transistor; supports driving medium-power loads like relays or LEDs directly.
hFE 100–300 - DC current gain at −2 V VCE/−150 mA IC; ensures stable biasing with low base drive current in linear or saturated operation.
VCE(sat) ≤ −750 mV - Collector-emitter saturation voltage at −500 mA/−50 mA; minimizes conduction loss and self-heating in switching mode.
fT 200 MHz - Transition frequency at −10 V VCE/−20 mA IC; supports fast digital switching with <40 ns turn-on time.
Ptot (per device) 550 mW - Total power dissipation on FR4 with 1 cm² collector pad; defines maximum steady-state thermal load per package.

Pinout & Package

SOT363-3 (TSSOP6) is a 6-pin, surface-mount plastic package with 0.65 mm lead pitch, 2.2 mm × 1.35 mm body size, and exposed thermal pad-compatible footprint. Pin 1 is marked by a dot or notch; device orientation follows transparent top-view labeling.

Pin/Terminal Circuit Role Design Meaning
1 Emitter TR1 Emitter terminal of first PNP transistor; connects to load return path or ground reference for channel 1.
2 Base TR1 Control input for TR1; requires current-limited drive to achieve specified hFE and switching speed.
3 Collector TR2 Output node of second PNP transistor; ties to positive supply rail when TR2 is active.
4 Emitter TR2 Emitter terminal of second PNP transistor; used for dual-sink or complementary output configuration.
5 Base TR2 Independent control input for TR2; enables asynchronous or mirrored switching of both transistors.
6 Collector TR1 Output node of first PNP transistor; configured as high-side switch or current mirror output.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive temperature range (−55 °C to +150 °C) and stress testing; eliminates need for additional qualification effort in vehicle ECUs.
Dual independent PNP topology No internal coupling between transistors; allows separate biasing, timing control, and fault isolation in safety-critical circuits.
Low VCE(sat) at high current ≤ −750 mV at −500 mA/−50 mA ensures <0.375 W conduction loss per channel, reducing thermal management overhead.
Fast switching performance 40 ns turn-on time and 350 ns turn-off time enable PWM operation up to ~1 MHz in LED dimming or motor control.
Compact TSSOP6 footprint 2.2 mm × 1.35 mm body with 0.65 mm pitch saves >60% board area versus discrete SO-8 dual transistors.

Applications

Automotive Door Module LED Matrix Driver

Use Scenario: Controlling window lift motors and interior lighting via microcontroller GPIOs in door control units.

IC Role / Device Role / Timing Role: Dual-PNP level shifter and current amplifier, translating 3.3 V logic to 12 V/24 V loads while providing reverse polarity protection.

Use Value: Eliminates need for external flyback diodes and discrete base resistors; AEC-Q101 rating ensures compliance with ISO 16750-2 pulse test requirements.

Use Scenario: Driving individual rows/columns in automotive tail lamp or DRL matrix arrays with PWM dimming.

IC Role / Device Role / Timing Role: High-speed current sink switch enabling precise current regulation and flicker-free dimming at 1–2 kHz.

Use Value: 200 MHz fT and 40 ns ton support clean edge transitions; low VCE(sat) maintains consistent LED brightness across temperature.

Redundant Power Sequencing Industrial Sensor Interface

Use Scenario: Enabling/disabling dual power rails in programmable logic controllers with fail-safe redundancy.

IC Role / Device Role / Timing Role: Independent high-side switch pair controlling isolated 5 V and 3.3 V domains during boot-up and fault recovery.

Use Value: Separate base terminals allow staggered activation; −40 V VCEO withstands back-EMF from inductive rail supervisors.

Use Scenario: Conditioning analog sensor outputs (e.g., NTC thermistors, pressure bridges) in industrial HVAC controllers.

IC Role / Device Role / Timing Role: Linear amplifier stage providing current-to-voltage conversion and offset compensation in ratiometric measurement paths.

Use Value: hFE stability over −55 °C to +125 °C ensures calibration retention; low Cc (8.5 pF) preserves signal bandwidth above 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PNP switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847BPDW1T1G Lower VCEO (−45 V), higher hFE (200–450), but only 100 mA IC rating and no AEC-Q101 qualification. Restricted to non-automotive consumer or industrial signal conditioning; unsuitable for 24 V load switching. Select when gain linearity and low-noise amplification outweigh power handling and automotive compliance.
DMN3028LSD-13 MOSFET-based dual-N-channel device (not PNP); RDS(on) = 28 mΩ, logic-level gate drive, no DC current gain. Requires gate pull-down resistors and lacks inherent current limiting; better for high-efficiency switching, worse for analog biasing. Prefer for battery-powered systems needing ultra-low quiescent loss, but avoid where BJT-like saturation behavior or linear operation is required.

Compared with BC847BPDW1T1G and DMN3028LSD-13, the PMBT4403YS uniquely combines automotive qualification, −600 mA current capability, and true dual-PNP architecture-enabling direct replacement of discrete TO-92 pairs while meeting AEC transient immunity and thermal derating requirements.

Availability

PMBT4403YS is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, and industrial sensor interface designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PMBT4403YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

The PMBT4403YS belongs to Nexperia's AEC-Q101-qualified small-signal transistor portfolio, engineered specifically for space-constrained, thermally demanding automotive subsystems requiring dual-channel switching without compromising robustness or manufacturability.

FAQ

What is the maximum allowable junction temperature for PMBT4403YS?

The absolute maximum junction temperature (Tj) is 150 °C, as defined in IEC 60134 limiting values. Operation above this threshold risks permanent degradation of hFE and increased leakage. Derating curves in Figure 1 show that full 550 mW power dissipation is only permissible below 25 °C ambient when using the enhanced thermal pad layout.

Can PMBT4403YS be used in linear amplification mode?

Yes-the device is explicitly rated for linear amplification per its General Description and exhibits stable hFE from −100 µA to −500 mA collector current (Figure 4). Its VBE vs. IC characteristics (Figure 6) and low output capacitance (Cc = 8.5 pF) support broadband analog gain stages up to 100 kHz without phase shift concerns.

How does the SOT363-3 package differ from standard SOT363?

The SOT363-3 variant features tighter dimensional tolerances and optimized solder land patterns per Figures 13–14, including refined pad widths (0.5 mm for pins 1–4, 0.6 mm for pins 5–6) and 2.65 mm × 2.35 mm reflow footprint. This revision improves placement yield and thermal transfer consistency compared to legacy SOT363 outlines.

Is there cross-reference data between PMBT4403YS and its NPN complement PMBT4401YS?

Yes-both share identical SOT363-3 packaging, pinout, thermal specs, and AEC-Q101 qualification. Key electrical differences include polarity reversal (VCEO = +40 V for PMBT4401YS), complementary hFE curves, and inverted saturation voltages. They are designed as matched pairs for push-pull or complementary switching topologies.

PMBT4403YSX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Power - Max:
250 mW
Frequency - Transition:
200MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

PMBT4403YSX FAQ

1.How can I place an order for PMBT4403YSX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMBT4403YSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMBT4403YSX reliable?

The price and inventory of PMBT4403YSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMBT4403YSX is usually 5 days.

3.What payment methods are accepted for PMBT4403YSX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMBT4403YSX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMBT4403YSX?

PMBT4403YSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMBT4403YSX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMBT4403YSX?

For technical support, including PMBT4403YSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMBT4403YSX requirements.

6.How does Aetrix verify that PMBT4403YSX is sourced from the original manufacturer or authorized distributors?

All PMBT4403YSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMBT4403YSX meets industry standards.

7.What is the process for return or replacement of PMBT4403YSX?

All PMBT4403YSX units undergo pre-shipment inspection (PSI). If there is an issue with PMBT4403YSX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMBT4403YSX part is unused and in its original packaging.

Return procedure for PMBT4403YSX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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