NXP Semiconductors PMBT5401,215

Overview

PMBT5401,215 from Nexperia (formerly Philips Semiconductors) is a PNP high-voltage bipolar junction transistor in SOT23 package, rated for −150 V V_CEO, −300 mA I_C, and 250 mW P_tot, used for switching and amplification in telephony line interface circuits and other high-voltage analog/digital control stages.

For engineers reviewing the PMBT5401,215 datasheet, PMBT5401,215 pinout, PMBT5401,215 application, or PMBT5401,215 equivalent, key selection criteria include verified PNP polarity, −150 V collector-emitter breakdown, SOT23 thermal resistance of 500 K/W, DC current gain range of 50–240 at −10 mA, and confirmed compatibility with FR4 PCB mounting per IEC 60134 limiting values.

Technical Context

The PMBT5401,215 operates as a discrete PNP BJT with fixed emitter-base and collector-base junction architecture, optimized for high-voltage linear and saturated switching. Its f_T of 100–300 MHz supports RF-adjacent signal conditioning up to ~100 MHz, while low C_c (6 pF) minimizes capacitive loading in high-impedance node interfaces.

Thermal design relies on its 500 K/W R_th(j-a) under FR4 mounting, requiring derating above Tamb = 25 °C; maximum junction temperature is 150 °C, with storage range spanning −65 °C to +150 °C. Cut-off currents are specified at −50 nA (ICBO) and −50 nA (IEBO), confirming stable leakage performance at rated voltage stress.

Key Specifications

Pinout & Package

Package: SOT23 (TO-236AB), plastic surface-mount, 3-lead, footprint compatible with JEDEC TO-236 standard; dimensions: D = 2.8 mm, E = 1.4 mm, Lp = 1.2 mm, bp = 0.48 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Compared with MMBT5401 and PZT5401, the PMBT5401,215 delivers identical high-voltage PNP functionality in the smallest standard footprint, balancing miniaturization, manufacturability, and thermal constraints for cost-sensitive telecom and industrial designs.

Availability

PMBT5401,215 is available at Aetrix Electronics and suitable for telephone line interface, industrial sensor conditioning, high-voltage switching power supply, and legacy display driver applications requiring stable component supply and long-term obsolescence management.

Supply support for PMBT5401,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions, spun off from Philips Semiconductors in 2017 with full IP and manufacturing continuity.

The PMBT5401,215 belongs to Nexperia's high-voltage bipolar transistor family, engineered specifically for robustness in telephony infrastructure, industrial control, and legacy analog systems demanding −150 V blocking and stable gain at elevated temperatures.

FAQ

What is the maximum collector-emitter voltage rating for the PMBT5401,215?

The PMBT5401,215 has a maximum collector-emitter voltage (V_CEO) rating of −150 V under open-base conditions, verified per IEC 60134 absolute maximum ratings. This rating applies at T_j ≤ 150 °C and defines the upper limit for safe DC or repetitive peak voltage operation without avalanche conduction. Exceeding this value risks permanent device failure.

Is the PMBT5401,215 pin-compatible with the NPN complement PMBT5550?

No - the PMBT5401,215 and PMBT5550 share the same SOT23 package and pinout (base/emitter/collector on pins 1/2/3), but they are complementary PNP/NPN devices with opposite polarity and bias requirements. While physically interchangeable, circuit redesign is required to accommodate reversed current flow and voltage reference directions; direct substitution without schematic modification will not function.

What is the thermal resistance of the PMBT5401,215 and how does it affect PCB layout?

The PMBT5401,215 has a junction-to-ambient thermal resistance (R_th(j-a)) of 500 K/W when mounted on a standard FR4 PCB per datasheet test condition. This high value means even modest power dissipation (e.g., 100 mW) causes >50 °C junction rise above ambient, necessitating careful copper pour design, thermal vias, or derating above 25 °C ambient. Layout must avoid thermally isolating the SOT23 pad.

Does the PMBT5401,215 support RF applications, and what is its usable frequency range?

Yes - the PMBT5401,215 has a transition frequency (f_T) of 100–300 MHz, making it suitable for RF-adjacent functions like IF amplification, oscillator buffering, or low-power transmitter driver stages up to ~100 MHz. Its 6 pF collector capacitance and low noise figure (≤8 dB) further support signal integrity in narrowband analog paths, though it is not characterized for broadband RF power amplification.

How does the DC current gain (h_FE) of the PMBT5401,215 vary with operating conditions?

The PMBT5401,215 exhibits h_FE = 50–240 depending on collector current: minimum 50 at −1 mA and −50 mA, and 60–240 at −10 mA. Gain decreases slightly above −10 mA and is temperature-dependent, dropping ~0.5%/°C above 25 °C. Designers should use the −10 mA point (h_FE ≥ 60) for robust biasing in switching applications and verify gain margin at worst-case temperature and current extremes.