NXP Semiconductors PMBT5401,235
- Part No.:
- PMBT5401,235
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PMBT5401,235.pdf
- Description:
- TRANS PNP 150V 0.3A SOT-23
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
PMBT5401,235 from Nexperia (formerly Philips Semiconductors) is a PNP high-voltage bipolar junction transistor in SOT23 package, rated for −150 V VCEO, −300 mA IC, and 250 mW Ptot, used for switching and amplification in telephony line interface circuits.
For engineers reviewing the PMBT5401,235 datasheet, PMBT5401,235 pinout, PMBT5401,235 application, or PMBT5401,235 equivalent, key selection criteria include verified PNP polarity, −150 V collector-emitter breakdown, SOT23 footprint compatibility, and confirmed hFE range of 50–240 at −10 mA.
Technical Context
This discrete PNP transistor operates with open-base collector-emitter voltage up to −150 V and open-emitter collector-base voltage up to −160 V, supporting high-voltage analog and switching functions where reverse-polarity biasing is required. Its fT of 100–300 MHz enables use in low-noise audio preamplifier stages and line-driver applications.
Thermal resistance Rth(j-a) is 500 K/W on FR4 PCB, limiting continuous DC operation to ≤250 mW at Tamb ≤25 °C. Cutoff currents (ICBO ≤50 nA at −120 V, IEBO ≤50 nA at −4 V) confirm suitability for high-impedance bias networks in telecom signal conditioning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −150 V: Maximum safe DC voltage between collector and emitter with base open - defines high-side switch headroom in negative-rail systems. |
| IC | −300 mA: Continuous DC collector current - sets maximum load drive capability in relay drivers or LED current sinks. |
| hFE | 50–240: DC current gain at VCE = −5 V - determines base drive requirements for saturation in linear or switching modes. |
| VCE(sat) | −200 mV (at −10 mA/−1 mA): Low saturation voltage - minimizes power loss and heat generation in saturated-switch applications. |
| fT | 100–300 MHz: Transition frequency - supports stable small-signal amplification up to VHF band in RF front-end stages. |
| Rth(j-a) | 500 K/W: Junction-to-ambient thermal resistance on FR4 - requires derating above 25 °C ambient to maintain Tj ≤150 °C. |
Pinout & Package
Package: SOT23 (TO-236AB), plastic surface-mount, 3-lead, 1.3 mm × 2.9 mm × 1.0 mm body, standard JEDEC outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased PNP operation; requires negative base current relative to emitter to turn on. |
| 2 | Emiter | Current source terminal in PNP configuration; connected to higher potential rail (e.g., −48 V in telephony). |
| 3 | Collector | Current sink terminal; output node for switched loads or amplified signals referenced to lower potential. |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage PNP structure | Supports −150 V VCEO operation - enables direct interface with legacy telecom −48 V supply rails without level-shifting. |
| Low saturation voltage | VCE(sat) ≤ −500 mV at −50 mA/−5 mA - reduces conduction loss in high-current switching nodes. |
| Low noise figure | F ≤ 8 dB at 200 µA, 5 V, 2 kΩ source - suitable for low-level signal amplification in line-card receive paths. |
| SOT23 footprint | Standardized 3-pin surface-mount package - ensures board-level compatibility with automated assembly and space-constrained telecom modules. |
Applications
| Telecom Line Interface | −48 V Power Switching |
|---|---|
Use Scenario: Signal coupling and overvoltage protection in PSTN line cards handling ring detection and off-hook signaling. IC Role / Device Role / Timing Role: PNP switch controlling current flow through hybrid transformer windings and SLIC interface circuits. Use Value: −150 V VCEO withstands ringing voltage transients up to −170 V peak; low ICBO ensures stable bias under temperature variation. | Use Scenario: High-side load switching for −48 V backup power distribution in network edge equipment. IC Role / Device Role / Timing Role: PNP high-side switch enabling controlled power-up sequencing of downstream DC-DC converters. Use Value: −300 mA IC rating supports typical load currents; −200 mV VCE(sat) limits dissipation to <100 mW at 500 mA. |
| Analog Audio Preamp | Industrial Sensor Biasing |
Use Scenario: Low-noise preamplification stage for differential microphone inputs in VoIP gateways. IC Role / Device Role / Timing Role: Common-emitter amplifier configured for 20–20 kHz bandwidth with minimal added noise. Use Value: 8 dB noise figure at 200 µA bias and 2 kΩ source impedance meets ITU-T G.107 E-model requirements. | Use Scenario: Precision current source for RTD or thermistor excitation in industrial process controllers. IC Role / Device Role / Timing Role: Constant-current sink in feedback loop of op-amp-based current generator. Use Value: Tight hFE spread (50–240) and low ICBO (<50 nA) ensure stable 100 µA–1 mA bias over −40 to +85 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-voltage transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC807-25,215 | VCEO = −45 V, hFE = 160–400, SOT23 package | Limited to ≤−45 V systems; higher hFE but lower voltage rating | Select only when operating voltage ≤−45 V and higher DC gain is prioritized over breakdown margin. |
| MMBT5401 | Identical electrical specs; same SOT23 package; RoHS-compliant marking variant | No functional difference; identical pinout and thermal behavior | Drop-in replacement with no design change required - preferred for new designs requiring RoHS compliance. |
Compared with BC807-25,215, PMBT5401,235 provides 3.3× higher voltage tolerance critical for telecom line interfaces; versus MMBT5401, it shares full electrical and mechanical equivalence but differs in date-code and regional manufacturing origin per marking code.
Availability
PMBT5401,235 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial sensor conditioning, and −48 V power switching applications requiring stable component supply and long-term lifecycle support.
Supply support for PMBT5401,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency and miniaturization.
The PMBT5401,235 belongs to Nexperia's high-voltage bipolar transistor family designed specifically for robust switching and amplification in telecom, industrial control, and power management systems.
FAQ
What is the maximum collector-emitter voltage rating for PMBT5401,235?
The PMBT5401,235 has a maximum collector-emitter voltage (VCEO) rating of −150 V under open-base conditions. This value is specified in the Absolute Maximum Ratings table and reflects its suitability for high-voltage PNP switching applications such as telecom line interface circuits. Exceeding this voltage risks permanent device failure.
Is PMBT5401,235 pin-compatible with NPN transistors like PMBT5550?
No - PMBT5401,235 is a PNP transistor with base-emitter-collector pinout (1-2-3), while PMBT5550 is its NPN complement with reversed polarity and identical SOT23 pin assignment. They share the same package and pin positions but require opposite biasing; direct substitution without circuit revision will cause functional failure.
What is the thermal resistance of PMBT5401,235 on an FR4 PCB?
The PMBT5401,235 has a junction-to-ambient thermal resistance (Rth(j-a)) of 500 K/W when mounted on a standard FR4 printed-circuit board per datasheet note. This value assumes no copper pour or thermal vias; actual thermal performance improves with enhanced PCB layout, but derating is required above 25 °C ambient to keep junction temperature ≤150 °C.
Does PMBT5401,235 support high-frequency amplification?
Yes - the PMBT5401,235 has a transition frequency (fT) of 100–300 MHz at −10 mA collector current and −10 V collector-emitter voltage. This enables stable small-signal amplification in VHF-band applications such as RF front-ends and broadband line drivers, provided proper biasing and impedance matching are implemented in the PMBT5401,235 circuit design.
What is the typical DC current gain (hFE) of PMBT5401,235 at low current?
The PMBT5401,235 exhibits a minimum hFE of 50 at −1 mA collector current and −5 V collector-emitter voltage, rising to 60–240 at −10 mA and −50 mA respectively. This wide gain range allows flexible bias point selection in both linear amplification and saturated switching configurations using the PMBT5401,235.
PMBT5401,235 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 300 mA
- Voltage - Collector Emitter Breakdown (Max):
- 150 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 10mA, 5V
- Power - Max:
- 250 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
PMBT5401,235 FAQ
1.How can I place an order for PMBT5401,235 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMBT5401,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMBT5401,235 reliable?
The price and inventory of PMBT5401,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMBT5401,235 is usually 5 days.
3.What payment methods are accepted for PMBT5401,235?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMBT5401,235 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMBT5401,235?
PMBT5401,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMBT5401,235 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMBT5401,235?
For technical support, including PMBT5401,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMBT5401,235 requirements.
6.How does Aetrix verify that PMBT5401,235 is sourced from the original manufacturer or authorized distributors?
All PMBT5401,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMBT5401,235 meets industry standards.
7.What is the process for return or replacement of PMBT5401,235?
All PMBT5401,235 units undergo pre-shipment inspection (PSI). If there is an issue with PMBT5401,235, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMBT5401,235 part is unused and in its original packaging.
Return procedure for PMBT5401,235:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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