Nexperia USA Inc. PMBT5551,235

Overview

PMBT5551 from Nexperia is an NPN high-voltage general-purpose transistor in SOT23 package, rated for 160 V V_CEO, 300 mA I_C, and 250 mW P_tot at T_amb ≤ 25 °C. It delivers h_FE ≥ 80 at I_C = 1 mA and f_T ≥ 100 MHz, supporting switching and amplification in HV signal conditioning circuits.

For engineers reviewing the PMBT5551 datasheet, PMBT5551 pinout, PMBT5551 application, or PMBT5551 equivalent, key selection criteria include its 160 V collector-emitter blocking capability, SOT23 thermal resistance (500 K/W), low leakage (I_CBO ≤ 50 nA at 120 V), and verified performance across −65 °C to +150 °C ambient range.

Technical Context

This discrete NPN bipolar junction transistor operates with open-base V_CEO = 160 V and open-emitter V_CBO = 180 V, enabling use in medium-voltage switch-mode interfaces. Its DC current gain spans h_FE = 80–250 (I_C = 10 mA) and drops to ≥30 at I_C = 50 mA, reflecting stable gain compression under load.

The device exhibits V_CE(sat) ≤ 200 mV at I_C = 50 mA / I_B = 5 mA and V_BE(sat) ≤ 1 V under same conditions, confirming low-loss saturation behavior. Transition frequency f_T = 100–300 MHz supports RF-coupled pre-amplifier stages up to HF band.

Key Specifications

Pinout & Package

SOT23 plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, single-sided copper FR4 mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage transistor applications.

Compared with MMBT5551, PMBT5551 offers identical core performance in a different reel configuration; versus PZT5551, it trades higher power handling and thermal efficiency for smaller footprint and lower cost in low-power HV signal paths.

Availability

PMBT5551 is available at Aetrix Electronics and suitable for industrial power supply feedback, LED driver current sink, surge protection interface stage, and automated test equipment (ATE) signal switching requiring stable component supply and consistent SOT23 form factor.

Supply support for PMBT5551 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

The PMBT5551 belongs to Nexperia's high-voltage bipolar transistor product line, engineered for robustness in off-line power conversion, signal isolation, and transient-tolerant interface circuits.

FAQ

What is the maximum junction temperature for PMBT5551?

The absolute maximum junction temperature (T_j) is 150 °C, as defined in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation of h_FE and increased leakage. Derating is required above 25 °C ambient per the 500 K/W thermal resistance value on FR4 PCB.

Is PMBT5551 qualified for automotive applications?

No. Per the revision history (v.4, October 2023), PMBT5551 is explicitly marked non-automotive qualified. Nexperia provides separate −Q automotive-grade variants (e.g., PMBT5551-Q) with AEC-Q101 qualification, extended temperature testing, and enhanced reliability screening.

What is the typical noise figure of PMBT5551?

The noise figure is 8 dB at V_CE = 5 V, I_C = 200 µA, R_S = 2 kΩ, and frequency range 10 Hz to 15.7 kHz. This value applies specifically to low-level audio and sensor signal amplification where base resistance and shot noise dominate.

Can PMBT5551 replace BC547 in existing designs?

No-BC547 has V_CEO = 45 V and I_C = 100 mA, making it unsuitable for PMBT5551's 160 V/300 mA operating envelope. Substituting without circuit redesign risks catastrophic failure under voltage stress or thermal overload.