Nexperia USA Inc. PMBT5551-QR

Overview

PMBT5551-QR from Nexperia is an NPN high-voltage bipolar junction transistor in SOT23 package, rated for 160 V V_CEO, 300 mA I_C, and qualified to AEC-Q101 for automotive use. It serves as a robust switching or amplification device in high-voltage bias, signal conditioning, and load control circuits where reliability under thermal stress and voltage transients is critical.

For engineers reviewing the PMBT5551-QR datasheet, PMBT5551-QR pinout, PMBT5551-QR application, or PMBT5551-QR equivalent, key selection criteria include its 160 V collector-emitter breakdown rating, 300 mA continuous current capability, AEC-Q101 qualification status, thermal resistance of 500 K/W on FR4 PCB, and verified h_FE range (80–250 at I_C = 10 mA).

Technical Context

This discrete NPN transistor operates with open-base V_CEO up to 160 V and supports peak collector currents of 600 mA. Its DC current gain (h_FE) is specified from 80 to 250 at V_CE = 5 V and I_C = 10 mA, with saturation voltages as low as 150 mV (I_C = 10 mA, I_B = 1 mA) and 200 mV (I_C = 50 mA, I_B = 5 mA).

Thermal performance is defined for mounting on standard FR4 PCB with single-sided copper: R_th(j-a) = 500 K/W, enabling operation across –65 °C to +150 °C ambient and junction temperatures. Cut-off leakage (I_CBO) remains ≤50 nA at 120 V and 25 °C, rising to ≤50 µA at 100 °C.

Key Specifications

Pinout & Package

The PMBT5551-QR is housed in a SOT23 (TO-236AB) plastic surface-mount package measuring 2.9 mm × 1.3 mm × 1.0 mm with 1.9 mm lead pitch. The package is optimized for reflow and wave soldering per Nexperia's footprint guidelines (sot023_fr / sot023_fw).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage transistor applications.

Compared with BC847BW and MMBT5551, the PMBT5551-QR uniquely combines 160 V breakdown, AEC-Q101 qualification, and SOT23 form factor-making it the only option among the three for automotive-grade high-voltage switching where both reliability and voltage headroom are mandatory.

Availability

PMBT5551-QR is available at Aetrix Electronics and suitable for automotive lighting control, industrial sensor biasing, and power supply sequencing requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for PMBT5551-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and ESD protection devices.

The PMBT5551-QR belongs to Nexperia's AEC-Q101-qualified high-voltage transistor product line, engineered specifically for automotive and industrial applications demanding robustness against voltage transients, thermal cycling, and long operational life.

FAQ

What is the maximum allowable junction temperature for PMBT5551-QR?

The absolute maximum junction temperature (T_j) is 150 °C, as defined in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation of h_FE, increased leakage, or bond-wire failure. Derating is required above 25 °C ambient per the 500 K/W thermal resistance specification.

Is PMBT5551-QR suitable for linear amplifier applications?

Yes-its specified h_FE range (80–250), low noise figure (8 dB at 200 µA), and stable characteristics across temperature support Class-A and AB amplifier stages. However, its 250 mW P_tot limits output power; it is best suited for pre-amplifier or low-power driver roles, not final-stage audio output.

How does the AEC-Q101 qualification impact design validation?

AEC-Q101 qualification confirms successful completion of stress tests including HTSL, TC, UHAST, and ESD (HBM/MM). This eliminates the need for customers to repeat those qualification tests, accelerating time-to-market for automotive modules-though system-level validation (e.g., EMC, functional safety) remains the designer's responsibility.

Can PMBT5551-QR replace PN2222A in existing designs?

Only with verification: while both are NPN SOT23 transistors, PN2222A has lower V_CEO (40 V) and higher I_C (800 mA), making it unsuitable for 160 V applications. PMBT5551-QR offers superior voltage rating but lower current capacity-replacement is viable only if voltage margin is the priority and peak current stays below 300 mA.