Nexperia USA Inc. PMBT6428,215

Overview

PMBT6428,215 from Nexperia is an AEC-Q101-qualified NPN general-purpose transistor in SOT23 package, rated for 50 V V_CEO, 100 mA I_C, and DC current gain (h_FE) of 250–650 at 0.1 mA collector current. It serves as a low-voltage, low-current switching or amplification device in compact PCB designs, commonly deployed in telephony interface stages and signal conditioning circuits.

For engineers reviewing the PMBT6428,215 datasheet, PMBT6428,215 pinout, PMBT6428,215 application, or PMBT6428,215 equivalent, key selection criteria include its automotive-grade qualification, thermal resistance (500 K/W), saturation voltage (≤600 mV at 100 mA), transition frequency (100–700 MHz), and SOT23 footprint compatibility with high-density layouts.

Technical Context

This discrete NPN bipolar junction transistor operates in linear or saturated switching modes, with base-emitter turn-on voltage specified at 560–660 mV and collector-base cutoff current ≤10 nA. Its design supports stable DC amplification across ambient temperatures from –65 °C to +150 °C and junction temperatures up to 150 °C.

The device uses silicon planar epitaxial construction and is characterized under standard FR4 PCB mounting conditions. Thermal performance is defined by R_th(j-a) = 500 K/W, and its 3-pin SOT23 outline enables automated placement while maintaining electrical isolation between collector, base, and emitter terminals.

Key Specifications

Pinout & Package

SOT23 plastic surface-mounted package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1 mm body size, optimized for reflow and wave soldering per Nexperia footprints sot023_fr and sot023_fw.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BC846B,215 and MMBT3904LT1G, PMBT6428,215 offers superior h_FE consistency at low collector currents and guaranteed automotive qualification-making it preferred for precision biasing and safety-critical signal paths where gain predictability and environmental robustness are essential.

Availability

PMBT6428,215 is available at Aetrix Electronics and suitable for telephony interface modules, automotive sensor signal conditioning, and industrial I/O buffering requiring stable component supply and long-term manufacturability.

Supply support for PMBT6428,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in efficiency, miniaturization, and automotive qualification.

The PMBT6428,215 belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-effective, space-constrained switching and amplification in automotive, industrial, and communications systems.

FAQ

Is PMBT6428,215 suitable for automotive applications?

Yes. The PMBT6428,215 is fully AEC-Q101 qualified, having passed stress tests for temperature cycling, humidity, mechanical shock, and ESD per the Automotive Electronics Council standard. It is rated for operation from –65 °C to +150 °C ambient and junction temperature, making it appropriate for under-hood and cabin electronics where reliability is critical.

What is the maximum power dissipation for PMBT6428,215?

The total power dissipation (P_tot) is 250 mW at T_amb ≤ 25 °C on a standard FR4 PCB with single-sided copper. Derating is required above 25 °C at 2.0 mW/°C, based on its thermal resistance of 500 K/W. At 100 mA collector current and 600 mV saturation voltage, power dissipation is 60 mW-well within safe limits at moderate ambient temperatures.

How does the h_FE vary with collector current?

h_FE is specified as 250–650 at V_CE = 5 V and I_C = 0.1 mA, and remains ≥250 at I_C = 1 mA and 10 mA. This wide gain range at low currents supports stable biasing in amplifier configurations, while consistent minimum gain ensures predictable switching behavior even as collector current increases across its operational range.

Can PMBT6428,215 replace BC847B in existing designs?

Direct replacement is possible only if the design operates within 50 V V_CEO and does not rely on BC847B's 45 V rating margin or different h_FE binning. PMBT6428,215 has higher minimum h_FE at low I_C but lacks BC847B's tighter gain grouping. Verify saturation voltage, thermal performance, and AEC-Q101 compliance requirements before substitution.